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Abnormal evolution of resistivity and microstructure of annealed Ag nanoparticles/Ag–Mo films

  • Saibo Li , Shihao Liang , Chao Han EMAIL logo , Haoliang Sun and Guangxin Wang
Published/Copyright: December 15, 2023
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Abstract

Ag–Mo films with different thicknesses were prepared on polyimide substrate by magnetron sputtering and annealed at different temperatures. The effects of film thickness and annealing temperatures on the resistivity and microstructure of Ag–Mo alloys were investigated. Results show that many Ag nanoparticles were self-formed on Ag–Mo films’ surface. As the thickness of the Ag–Mo film increased from 163 to 409 nm, there was a significant decrease in its resistivity, dropping from 485.44 to 237.12 μΩ cm. Resistivity of the Ag–Mo film is dependent on the annealing temperature. When temperature rises from room temperature to 180℃, the resistivity decreases from 390.62 to 339.37 μΩ cm, with little change. After annealing above 270℃, a sudden increase of resistivity of the Ag–Mo film was attributed to the growth of Ag particles on the film surface contributing to the increase in surface roughness, which hindered electron transport and caused severe surface scattering. High-resistivity Ag–Mo films are expected to be candidates for high-resistivity thin-film devices.

1 Introduction

Nano-film materials are widely used in many fields such as microelectronics, optics, biomedical, solar cells, and sensors due to their unique microstructures and physicochemical properties [1,2,3]. In recent years, many researchers have extensively studied the electrical conductivity of metal or alloy films [4,5]. Silver (Ag) is of interest among many metals because of its low resistivity [6], and Ag alloy films are widely used in microelectronic devices because of their excellent electrical properties. In general, the conductivity of thin films is usually weaker than that of metal or alloy bulks. Therefore, many researchers have made efforts to improve conductivity of the thin films, minimize heat and energy loss generated by working equipment, and achieve the goal of extending its lifespan. However, high-resistivity thin films are also used in special application fields, such as high-resistivity thin-film resistors [7,8,9,10] working in high-voltage and high-temperature environments. There are many methods and treatment processes to increase the resistivity of thin films – for example, by oxidizing an element in the alloy film in order to increase the resistivity or by reducing the thickness of the film to increase the resistivity [11,12,13].

When the free electrons collide, they lose their directed velocity given by the external electric field [14], and such collisions may occur in electron-lattice, electron impurity, electron-grain boundary, and electron surface. Surface scattering, grain boundary scattering, and impurity scattering have a great influence on the resistivity of thin films, so the film resistivity can be increased by enhancing surface scattering, grain boundary scattering, etc. [15], and thus, high-resistivity films can be prepared. Lee et al. [16] significantly increased the resistivity of the films by adding yttrium to the Cu-Mn alloy films due to the fact that the addition of yttrium leads to grain refinement and a reduction in grain size results in enhancing grain boundaries, which increases the resistivity of the films [17]. Tseng et al. [18] treated Al–W alloy films with chemical–mechanical polishing (CMP) and found that the strength of the selective orientation of Al–W films decreased after CMP treatment, which increased the film resistivity. The aforementioned methods and treatment processes are complicated and pricey.

In this study, we deposited two immiscible metals of Mo and Ag on polyimide (PI) substrates by co-sputtering technique to prepare Ag–Mo films and investigated the effects of film thickness and annealing temperature on the resistivity of Ag–Mo films. It was reported that a large number of Ag nanoparticles were formed on the surface of Ag–Zr [19] and Ag–Co [20] films due to the insolubility of Zr and Co with Ag, respectively. Since Mo and Ag were mutually insoluble [21], we expect to obtain Ag nanoparticles on Ag–Mo film’s surface. Then, the COMSOL Multiphysics software is applied to simulate the trajectory of electron transport when current passes through films to reveal the effect of film surface morphology on film resistivity. A simple method to prepare high-resistivity Ag–Mo films is expected to be of significant interest for high-resistant device applications.

2 Materials and methods

The JCP-350M2 magnetron sputtering machine (Beijing Technol Co., LTD, China) was used to deposit Ag–Mo film on PI substrate with a thickness of 125 μm, and the targets used were 99.99% purity silver target (Ф50 mm × 4 mm) with 99.99% molybdenum (Ф50 mm × 4 mm). First, PI substrate (20 mm × 20 mm × 0.125 mm) was placed in a beaker containing anhydrous ethanol (99.98% purity) for ultrasonic cleaning to remove surface dust and organic matter, as shown in Figure 1(a). Next, Ag–Mo films of different thicknesses were prepared by varying the deposition time (5, 10, and 15 min). The Ag target was connected to the radio frequency power supply with a power setting of 80 W, and the Mo target was connected to the direct current (DC) power supply with a power setting of 100 W. The vacuum of the chamber was 5 × 10−4 Pa, the rotation speed of the substrate table was 30 rpm, and the argon flow rate was kept at 40 sccm. The samples were placed in a tube furnace with argon-protective atmosphere for annealing at 90, 180, 270, and 360℃ for 1 h, respectively, and then cooled to room temperature, as shown in Figure 1(c). Next, the square resistance of the Ag–Mo film was measured by an RTS-8 four-probe resistance tester, as shown in Figure 1(d), and the square resistance was measured at three different locations for each sample. The film thickness could be measured by cross-sectional morphology of the film, whose Ag–Mo film resistivity could be calculated by the following:

(1) ρ R × d ,

where ρ, R, and d represent the resistivity, square resistance, and thickness of the Ag–Mo film, respectively.

Figure 1 
               Preparation process of the Ag–Mo film is as follows: (a) cleaning PI substrate, (b) deposition film, (c) annealing, and (d) measuring square resistance.
Figure 1

Preparation process of the Ag–Mo film is as follows: (a) cleaning PI substrate, (b) deposition film, (c) annealing, and (d) measuring square resistance.

The surface morphology and microstructure of Ag–Mo films were characterized by field emission scanning electron microscopy (FESEM, JSM-7800F) and transmission electron microscopy (TEM, JEM-2100). X-ray diffractometer (XRD, D 8 advance) was used to characterize the crystal structure of films and Ag particles, the working parameters are λ = 0.1541 nm (Cu-kα), current 40 mA, voltage 40 kV, scanning speed 6°/min, scanning step size 0.02°, diffraction angle set in the range of 20°–90°, and each step stays for 1 s. The energy-dispersive spectrometer (EDS) was used to analyze the elemental content of Ag–Mo films. COMSOL Multiphysics software was used to simulate the current trajectory through the films to reflect electron transport. The AC/DC module in COMSOL Multiphysics software was used to simulate the current trajectory through the film to reflect the electron transport. Where the potential is set to 10 V, the current density was set to 10 A/m2 and the boundary condition was set to periodic boundary condition. In the simulation process, the material of the film is set to Mo, and the material of the surface nanoparticles is set to Ag.

3 Results and discussion

3.1 Analysis of XRD diffraction patterns of Ag–Mo films

Figure 2 shows the XRD diffraction pattern of Ag–Mo film with a film thickness of 409 nm after annealing at different temperatures; it can be seen from Figure 2 that the as-deposited Ag–Mo film has only weak diffraction peaks of Mo and no diffraction peaks of Ag due to small Ag grains in the film, which is the result of Mo inhibiting the growth of Ag grains [22]. With increase in annealing temperature, the intensity of Ag (111) diffraction peaks increases significantly, which indicates that the Ag crystallinity increases significantly, while the intensity of Mo diffraction peaks decreases. Figure 2(b) shows the XRD patterns of Ag–Mo films with different film thicknesses after annealing at 360℃. It can be seen that the intensity of Ag (111) diffraction peak increases significantly with the increase of film thickness.

Figure 2 
                  (a) and (b) XRD diffraction patterns of Ag–Mo films: (a) XRD diffraction patterns of Ag–Mo films with a film thickness of 409 nm at different annealing temperatures and (b) XRD diffraction patterns of Ag–Mo films with different thicknesses after annealing at 360℃.
Figure 2

(a) and (b) XRD diffraction patterns of Ag–Mo films: (a) XRD diffraction patterns of Ag–Mo films with a film thickness of 409 nm at different annealing temperatures and (b) XRD diffraction patterns of Ag–Mo films with different thicknesses after annealing at 360℃.

3.2 Microstructure analysis of Ag nanoparticles/Ag–Mo films

Figure 3(a)–(c) shows the surface morphology and EDS spectra of the deposited Ag–Mo films, and it can be seen that many small particles formed on the Ag–Mo film’s surface. Figure 3(d) shows the selected area electron diffraction (SAED) of a particle detached from the Ag–Mo film by ultrasonic vibration. The crystal plane spacing of these particles was calculated and compared with single-crystal Ag, proving that these particles on the surface of Ag–Mo film are single-crystal Ag nanoparticles, which is consistent with previous study [23] and Ag-Co film [20]. The elemental contents of Ag–Mo films with different film thicknesses are shown in the EDS spectra, and it can be seen that the atomic ratios of Ag to Mo in the films are both close to 4:6, indicating that films prepared by co-sputtering are uniform in composition and have very good repeatability. As shown in Figure 3(e) and (f), TEM images of the as-deposited and 270℃ annealed Ag–Mo films show that the films are composed of Ag and Mo before and after annealing and are homogeneous.

Figure 3 
                  (a)–(c) Surface morphology and EDS results of the as-deposited Ag–Mo films with different film thicknesses: (a) 163 nm, (b) 296 nm, (c) 409 nm; (d) SAED of the particles on the Ag–Mo film annealed at 270℃; (e) TEM image of as-deposited Ag–Mo film; (f) TEM image of 270℃ annealed Ag–Mo film.
Figure 3

(a)–(c) Surface morphology and EDS results of the as-deposited Ag–Mo films with different film thicknesses: (a) 163 nm, (b) 296 nm, (c) 409 nm; (d) SAED of the particles on the Ag–Mo film annealed at 270℃; (e) TEM image of as-deposited Ag–Mo film; (f) TEM image of 270℃ annealed Ag–Mo film.

3.3 Study of the variation of resistivity of Ag–Mo film with film thickness

Figure 4(a)–(c) shows the surface morphology and cross-sectional morphology of the as-deposited Ag–Mo films with different film thicknesses, and the Ag–Mo films have a homogeneous monolayer, which is different from the multilayer metal films [24]. From the cross-sectional morphology, we observe that the thickness of Ag–Mo films with deposition times of 5, 10, and 15 min is 163, 296, and 409 nm, respectively. Figure 4(d) shows the variation of the square resistance and resistivity of the as-deposited Ag–Mo films with different film thicknesses. The resistivity of Ag–Mo film was calculated by using equation (1). The resistivity of the film decreased significantly from 485.44 to 237.12 μΩ cm as film thickness increased, which was due to its crystallinity becoming better as the film thickness increases. And the resistivity of Ag–Mo film is much higher than that of pure silver film. However, it can be clearly seen that resistivity does not change linearly with the increase of film thickness, indicating that there are other factors affecting the resistivity. Compared to the resistivity of pure Ag films, the addition of Mo elements in Ag films results in significantly increasing the film resistivity due to the effect of impurity scattering [25], which is similar to the previously reported Ni–Zr alloy thin films [26].

Figure 4 
                  (a)–(c) Surface morphology and cross-sectional morphology of the as-deposited Ag–Mo films with different film thicknesses: (a) 163 nm, (b) 296 nm, and (c) 409 nm; (d) variation of square resistance and resistivity of the as-deposited Ag–Mo films with different film thicknesses; (e)–(f) surface morphology and cross-sectional morphology of the Ag–Mo films with different film thicknesses after annealing at 360℃: (e) 143 nm, (f) 268 nm, and (g) 380 nm; (h) variation of square resistance and resistivity of Ag–Mo films with different film thicknesses after annealing at 360℃.
Figure 4

(a)–(c) Surface morphology and cross-sectional morphology of the as-deposited Ag–Mo films with different film thicknesses: (a) 163 nm, (b) 296 nm, and (c) 409 nm; (d) variation of square resistance and resistivity of the as-deposited Ag–Mo films with different film thicknesses; (e)–(f) surface morphology and cross-sectional morphology of the Ag–Mo films with different film thicknesses after annealing at 360℃: (e) 143 nm, (f) 268 nm, and (g) 380 nm; (h) variation of square resistance and resistivity of Ag–Mo films with different film thicknesses after annealing at 360℃.

Figure 4(e)–(g) shows the surface morphology and cross-sectional morphology of the Ag–Mo films with different film thicknesses after annealing at 360℃. Compared with the as-deposited Ag–Mo films, Ag particles on the surface grow significantly after annealing, which is ascribed to the reason that annealing can give Ag atoms sufficient energy and promotes the diffusion of Ag atoms to the surface, and some neighboring Ag nanoparticles also merge with each other, leading to the growth of self-formed Ag nanoparticles and the decrease in the particles number.

The thicknesses of Ag–Mo films after annealing are 143, 268, and 380 nm, respectively, as can be seen from the cross-sectional morphologies. Compared to the as-deposited Ag–Mo films, the thickness of annealed films decreases by 20–30 nm, which is caused by diffusion of Ag atoms in the films to the surface. Figure 4(h) shows the variation of square resistance and resistivity of Ag–Mo films with different film thicknesses after annealing at 360℃. It can be seen that resistivity decreases from 1894.56 to 915.34 μΩ cm as the thickness of the film increases, which is the same as the variation pattern of the deposited Ag–Mo film. However, compared with the deposited Ag–Mo film, the resistivity of the film after annealing at 360℃ was more than three times that of the deposited film, which was different from previous studies which found that the resistivity of the film decreased after annealing [27,28,29]. Normally, annealing can reduce internal defects and thus slightly reduce the resistivity of the film. From the XRD pattern of Figure 2(a), it can be seen that with the increase of annealing temperature, the crystallinity of Ag improves, but the resistivity of the film increases significantly, indicating that other factors affect the resistivity of the Ag–Mo film. From the cross-sectional morphology of Figure 4(e)–(g), it is observed that the morphology of Ag nanoparticles is irregularly polyhedral. Figure (4) shows that the size of Ag particles on the surface of Ag–Mo film after annealing at 360℃ is significantly higher than that of the as-deposited films, so it can be speculated that the increase in film resistivity may be due to the growth of Ag nanoparticles on the surface of Ag–Mo film, leading to an increase in surface roughness, which hinders the electron transport [30,31], thus causing an abnormal increase in resistivity.

3.4 Mechanism of Ag particle/Ag–Mo film formation and growth

The mechanism of Ag particle formation and growth on the surface of Ag–Mo film can be explained by the Arrhenius equation and Fick’s first law. The Arrhenius equation is given as follows:

(2) D = D 0 exp Q R T ,

where D 0 is the exponential prefactor in m2 s−1, Q represents the activation energy per mole of atoms in J mol−1, T is the thermodynamic temperature in K, and R is the gas constant with a value of 8.314 J mol−1 K−1.

The diffusion coefficient and activation diffusion energies of Mo [32] and Ag [33] were obtained from previous studies: D Mo = 0.5 m2 s−1, Q Mo = 96,900 J mol−1, D Ag = 0.895 m2 s−1, and Q Ag = 49,500 J mol−1. Assuming that Mo and Ag do not impact each other in the diffusion process in Ag–Mo films, diffusion coefficients of Mo and Ag at different temperatures were calculated by the Arrhenius equation, and results are shown in Table 1. Annealing can promote atomic diffusion [34,35], and it can be seen from Table 1 that the self-diffusion coefficient of Ag is much larger than that of Mo at room temperature. With the increase of annealing temperature, self-diffusion coefficients of Ag and Mo increase, but self-diffusion coefficient of Ag is significantly larger than that of Mo. The diffusion flux of atoms can be calculated from Fick’s first law:

(3) J = D ρ z ,

where J is the diffusion flux in kg m−2 s−1, D is the diffusion coefficient in m2 s−1, and ρ is the mass concentration of diffusing substance in kg m−3. The diffusion coefficients of Ag at different temperatures are already known in Table 1. As annealing temperature increases, the diffusion flux of Ag increases, and more Ag atoms diffuse to the film surface, promoting the formation and growth of particles. A schematic diagram of the formation and growth of self-forming Ag particles on the Ag–Mo film after annealing is shown in Figure 5.

Table 1

Self-diffusion coefficients of Mo and Ag at different temperatures

Temperature (℃) Element
Mo (cm2 s−1) Ag (cm2 s−1)
25 5.52 × 10−18 1.95 × 10−9
90 5.94 × 10−15 6.89 × 10−8
180 3.45 × 10−12 1.78 × 10−6
270 2.43 × 10−10 1.56 × 10−5
360 5.12 × 10−9 7.42 × 10−5
Figure 5 
                  Schematic diagram of Ag particle growth on the surface of Ag–Mo film.
Figure 5

Schematic diagram of Ag particle growth on the surface of Ag–Mo film.

3.5 Study of the variation of resistivity of Ag–Mo film with annealing temperature for different film thickness

Figure 6(a)–(d) shows the surface morphology and cross-sectional morphology as well as the size distribution of self-formed particles of Ag–Mo films with a film thickness of 296 nm after annealing at different temperatures. When annealed below 180℃, particles on the surface of the film are uniformly distributed and particle size changes are not obvious. It can be seen from the particle size distribution diagram, surface self-forming Ag particle size is normally distributed and the particle morphology is gradually regular. When annealing temperature was increased to 270℃, the size of self-formed Ag particles on the Ag–Mo film increased significantly, and some adjacent Ag particles merged into one particle. With further increase of annealing temperature to 360℃, the size of Ag particles grows obviously, and there are also small Ag nanoparticles between large particles, as can be seen from the surface morphology in Figure 6(d), the contact merging growth between particles is common, and the size of some Ag particles can reach 385 nm or more. As the annealing temperature was further increased to 360℃, the size of Ag particles grew significantly, and small Ag nanoparticles also appeared between the large particles. From the surface morphology of Figure 6(d), it can be seen that the contact merging growth between the particles is common, and the size of some Ag particles can reach more than 385 nm. Observing the cross-sectional morphology of Figure 6(a)–(d), the height of Ag nanoparticles on the surface of the Ag–Mo film ranges from 10 to 40 nm when annealed below 180℃. As the annealing temperature increases to 270℃, the Ag nanoparticles on the film grow up and the height of Ag particles exceeds 100 nm. When the annealing temperature increases to 360℃, the height of some Ag particles on the Ag–Mo film reaches ∼200 nm. Therefore, the size and height of Ag nanoparticles on the surface of Ag–Mo film become larger with the increase of annealing temperature; as a result, the films become thinner due to the diffusion of a large number of Ag atoms to the surface of the film.

Figure 6 
                  (a)–(d) Surface morphology and cross-sectional morphology and particle size distribution of Ag–Mo films with a film thickness of 296 nm after different annealing temperatures: (a) 90℃, (b) 180℃, (c) 270℃, and (d) 360℃; (e) the resistivity variation of Ag–Mo films with annealing temperature for different deposition times; (f) the average size variation of Ag particles on the Ag–Mo films with different thickness and different annealing temperature.
Figure 6

(a)–(d) Surface morphology and cross-sectional morphology and particle size distribution of Ag–Mo films with a film thickness of 296 nm after different annealing temperatures: (a) 90℃, (b) 180℃, (c) 270℃, and (d) 360℃; (e) the resistivity variation of Ag–Mo films with annealing temperature for different deposition times; (f) the average size variation of Ag particles on the Ag–Mo films with different thickness and different annealing temperature.

Figure 6(e) shows the variation of resistivity of Ag–Mo films with annealing temperature for different deposition times. Observing the change curve of resistivity of Ag–Mo film with annealing temperature for the film thickness of 296 nm, it can be found that the change of resistivity of the Ag–Mo film is very small when annealed below 90℃, and the film resistivity is close to 400 μΩ cm. As the annealing temperature increases from room temperature to 180℃, the film resistivity decreases slightly, which is due to the fact that annealing can improve the crystallinity of the film while reducing the defects in the film. However, with further increase in annealing temperature, the resistivity of Ag–Mo films suddenly increased, which can be attributed to the formation of larger-sized Ag nanoparticles on the Ag–Mo films hindering the electron transport, resulting in higher resistivity. After annealing at 360℃, the Ag nanoparticles on the Ag–Mo films became larger, increasing the electron transport path and further increasing the resistivity of Ag–Mo films, which is consistent with our simulation results using COMSOL Multiphysics software in Figure 7.

Figure 7 
                  (a)–(d) Simulation results of the trajectories of current passage in the films with different Ag nanoparticle sizes calculated by COMSOL Multiphysics software: (a) no particles, (b) 300 nm particles (150 nm height), (c) particles grown up by merging into one particle, and (d) particles with multiple sizes.
Figure 7

(a)–(d) Simulation results of the trajectories of current passage in the films with different Ag nanoparticle sizes calculated by COMSOL Multiphysics software: (a) no particles, (b) 300 nm particles (150 nm height), (c) particles grown up by merging into one particle, and (d) particles with multiple sizes.

The resistivity change curves of Ag–Mo films with a thickness of 163 nm and thickness of 409 nm with annealing temperature are observed in Figure 6(e), and it can be seen that their resistivity curves are the same as those of Ag–Mo films with a thickness of 296 nm. After the annealing temperature reaches 270℃, the resistivity of the film suddenly increases. It is attributed that high-temperature annealing promotes more atomic diffusion, and the growth of self-formed Ag nanoparticles on the surface of Ag–Mo thin films causes the change of particle size and roughness, which hinders the transmission of electrons. From Figure 6(f), it can be seen that the average size of Ag particles increases when annealed above 180℃, further verifying that Ag nanoparticles grow up with increasing annealing temperature and some new Ag nanoparticles are formed. In conclusion, the resistivity of Ag–Mo film is closely related to the size of Ag nanoparticles on the surface, and the larger the particles, the more undulations on the film surface, which hinders the electron transport and leads to the increase of resistivity of the film.

3.6 Analysis of the resistivity increase of annealed Ag–Mo film

A model of the film sample was built using COMSOL Multiphysics software to simulate and calculate the trajectory of the current passage, as shown in Figure 7(a)–(d). Figure 7(a) shows the trajectory of the current passage through the film without self-forming nanoparticles on the surface. It can be seen from Figure 7(a) that the current trajectory is straight without surface undulations, which can indicate that there is no effect on the electron transport trajectory when the surface of the film is smooth, and therefore, the film exhibits a lower resistance. As shown in Figure 7(b), the trajectory through the current is shifted when a lot of larger particles are formed on the film’s surface. This is because the electron collision with the surface changes the orientation velocity and increases the path of electron migration in the film, leading to an increase in film’s resistivity. As the particles on the surface of the film grow up, the contact and merged large particles increase the path of electron transport and impede the electrons much, as shown in Figure 7(c), which has an important effect on the film resistivity. Figure 7(d) shows a simulation of multiple-sized particles on the film surface, where current passes through the rough film surface and the transport path of electrons is shifted, resulting in an impeded transport of electrons. Therefore, self-formed Ag particles on the film surface can change the film surface roughness, which affects the electron transport in the film and leads to changes in resistivity.

4 Conclusions

Ag–Mo films of different thicknesses were prepared on flexible substrate PI by co-sputtering magnetron sputtering technique. A large number of single-crystal Ag nanoparticles were self-formed on the surface of the deposited Ag–Mo films. It was found that the resistivity of the Ag–Mo films was dependent on the film thickness and annealing temperature, and the resistivity of the Ag–Mo films decreased with increasing film thickness due to the better crystallinity of thicker Ag–Mo films. The resistivity of Ag–Mo film decreased slightly after annealing below 180℃; however, the resistivity of Ag–Mo film suddenly increased when the annealing temperature was higher than 270℃. When the annealing temperature is higher than 270℃, the resistivity of Ag–Mo films suddenly increases, and the resistivity of Ag–Mo films after annealing at 360℃ is more than three times that of the deposited state films. The increase in resistivity is attributed to a larger number of Ag nanoparticles on the Ag–Mo films, which hinders electron transport, resulting in an increase of the electron’s migration path. This is proven by the results of the COMSOL Multiphysics software simulation of electron migration. The high-resistivity Ag–Mo thin films are expected to be candidates for high-resistivity thin-film devices.

  1. Funding information: The authors acknowledge the financial support from the National Natural Science Foundation of China (Grant No. U1204521).

  2. Author contributions: All authors have accepted responsibility for the entire content of this manuscript and approved its submission.

  3. Conflict of interest: The authors state no conflict of interest.

  4. Data availability statement: All data generated or analysed during this study are included in this published article.

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Received: 2023-03-21
Revised: 2023-08-20
Accepted: 2023-09-20
Published Online: 2023-12-15

© 2023 the author(s), published by De Gruyter

This work is licensed under the Creative Commons Attribution 4.0 International License.

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