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Synthesis and properties of PI composite films using carbon quantum dots as fillers

  • Yuyin Zhang , Hongtao Guo , Shaohua Jiang EMAIL logo , Zhaoyu Hu , Guojun Zha , Kunming Liu and Haoqing Hou EMAIL logo
Published/Copyright: July 12, 2022
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Abstract

Polyimide (PI) is widely used in the field of microelectronics because of its excellent thermal, mechanical, optical, and electrical properties. With the development of electronics and information industry, PI as a dielectric material needs to possess low dielectric loss. PI/carbon quantum dots (PI/CQDs) composite films with low dielectric loss were prepared by introducing CQDs into PI matrix. At 25°C and 1 kHz voltage, the dielectric loss of pure PI film is about 0.0057. The dielectric loss of PI/CQDs composite film is about 0.0018, which is about 68% lower than that of pure PI film. The dielectric loss of PI/CQD composite film is greatly reduced while the mechanical properties and thermal properties of PI/CQDs composite film roughly remain unchanged. Due to the cross-linking structure formed between CQDs and PI molecular chain, the relative movement of PI molecular chain is hindered.

1 Introduction

Polymide (PI) is a kind of high-performance polymer with excellent thermal property and mechanical property (1). The PI can be prepared from the polycondensation from an equal molar ratio of dianhydride and diamine followed by imidization. Its molecular chain usually contains a very stable imide ring and aromatic heterocyclic structure (2). PI was first synthesized in 1908 and first commercialized in 1961 (3). Later, PI gradually is applied in paint, adhesives, foam, fiber, and other commodities. There are many methods to synthesize PI, such as one-step, two-step, three-step, vapor deposition, and so on (4,5). This article adopts a two-step method to synthesize PI. Today, PI has been widely used in microelectronics, national defense, aerospace, energy, and electronic and electric industries.

With the development of the electronic information industry, dielectric materials are required to possess the characteristics such as high density, high stability, and large capacity. We need to obtain a film with high dielectric constant, low dielectric loss, and soft and easy processing. PI is favored for its excellent mechanical and thermal properties since the dielectric properties of PI are relatively poor. Therefore, it is necessary to improve the dielectric properties of PI films (6,7,8). The dielectric permittivity of pure PI can be changed by changing the chemical structure of the PI molecular chain while the influence is very small (9). Moreover, the process of synthesizing new monomers is complicated, and the cost is high. Therefore, it is an effective method to synthesize PI matrix composites by adding other particles to the PI matrix. As high dielectric constant fillers, BaTiO3 (10), CCTO (11,12), TiO2 (13), and other ceramic fillers can be added to PI matrix (14,15,16,17). The dielectric permittivity increases, meanwhile, the dielectric loss also increases correspondingly, and its mechanical property will achieve a large loss (14,15,16). Conductive fillers, such as graphene (18), CNTs (5,19), carbon spheres (20), porous carbon (21), silver (22,23), Mxenes (24), and other conductive fillers can be added to the PI matrix, the dielectric permittivity will increase greatly till approaching to the percolation threshold, but the enhancement on mechanical properties is not obviously (2,2529). All organic high dielectric materials were prepared by mixing two kinds of organic materials with different dielectric properties (7,30,31). The advantage of this method has of good dispersion. The disadvantage is that the dielectric properties of the composite film can only be limited to two kinds of organic matter (3237).

Carbon quantum dots (CQDs) was discovered in 2004, which is a zero-dimensional carbon nanomaterial, the micro particle size of CQDs is less than 10 nm, and the surface is rich in the amino, carboxyl, hydroxyl, and other organic functional groups, and low toxicity, high stability, easy functionalization, precursor variety, renewable (3841). There are many synthetic methods of CQDs, which can be roughly divided into bottom-up method and top-down method (42). Bottom-up method includes electrochemical method, microwave method, and hydrothermal solvothermal method. Top-down methods include laser ablation, arc discharge, chemical etching, and so on. It has been reported that CQDs can be used as compatibilizers or fillers for compatibilization of incompatible polymer blends (43). CQDs are also reported to adjust the band structure of PI aerogel and promoted the generation and separation of photogenerated electrons and holes (44). In another report, as one kind of CQDs, graphene quantum dots were added to PI to form composite membranes for solvent-resistant nanofiltration (45). These reports indicated that the CQDs have a good dispersibility with the PI. However, these reports did not provide an investigation of the dielectric properties of CQDs/PI composites.

In this work, the PI was synthesized by a two-step method with the first synthesis of polyamic acid (PAA) and then thermal imidization. The PI/CQD composite films with high dielectric properties were prepared by introducing CQDs into the PI matrix. The dielectric loss of pure PI film is about 0.0057. The dielectric loss of PI/CQD composite film can reach 0.0018, which is about 68% lower than pure PI films. Under the premise of relatively stable dielectric permittivity and mechanical property and thermal property, dielectric loss is reduced.

2 Experimental

2.1 Materials

3,3′,4,4′-Biphenyltetracarboxylic dianhydride (BPDA, 99.00%), 4,4′-oxydianiline (ODA, 99.0%), N,N-dimethylacetamide (DMAc, AR), urea (CON2H4, 99.50%), citric acid (C6H8O7, AR), deionized water (H2O, σ < 0.056 μS·cm−1), and anhydrous ethanol (C2H5OH, AR).

2.2 Synthesis of carbon quantum dots (CQDs)

6 g Citric acid, 3 g urea, and 60 mL deionized water were added to a 100 mL reactor, and the mixture solution was stirred evenly (46,47). Then, the mixture solution was reacted at 165°C for 4 h. After cooling to room temperature, the reaction solution was transferred to 150 mL anhydrous ethanol, which was evenly mixed and centrifuged at a speed of 10,000 rpm. After removing the turbidity liquid from the upper layer, the precipitation was mixed evenly with anhydrous ethanol and centrifuged again and then repeated many times until the liquid from the upper layer is clear. The precipitate was freeze-dried for 12 h to obtain CQDs. The production yield of the CQDs is about 57%.

2.3 Synthesis of polyimide/carbon quantum dots (PI/CQDs) composite films

5.95 g BPDA, 4.05 g ODA, and 90.00 g DMAc were added into a three-neck flask, and the mixture solution was stirred at −5°C for 12 h to obtain polyamide acid solution (PAA, ω = 10%) (3). PAA was diluted with DMAc into 3 wt%, and then CQDs was added to the PAA solution in proportion. The mixed dispersion is stirred evenly to form a homogenous dispersion and coated on the glass plate. Then, the samples were dried in the oven at 100°C for 4 h to evaporate the solvent. Finally, the glass plates are placed at 335°C for 20 min to obtain PI/CQDs composite films (Figure 1).

Figure 1 
            Schematic diagram of the preparations of PI/CQDs.
Figure 1

Schematic diagram of the preparations of PI/CQDs.

2.4 Characterizations

High-resolution transmission electron microscope (TEM; JEM 2100) was used to observe the microscopic morphology of CQDs. Fourier transform infrared spectrometer (FT-IR; TENSOR-27) was used to characterize the chemical bond structure. LCR precision digital bridge (KEYSIGHT-E4980A) was used to characterize the dielectric properties of materials. Microcomputer controlled electronic universal testing machine (SGCIS 09001) was used to characterize the mechanical properties of materials. Thermogravimetric thermal analyzer (TGA-55) was used to characterize the thermal properties of materials (test temperature range, 50–800°C; heating rate, 10°C·min−1; the work environment, N2). Dynamic thermomechanical analyzer (DMA; Perkin–Elmer Diamond) was used to characterize the glass transition temperature of composite films (test temperature range: 50–350°C, heating rate: 10°C·min−1, the work environment: N2).

3 Results and discussion

The morphology of CQDs is characterized using TEM. Figure 2 depicts that CQDs are distributed in nano-forms with a particle size of about 4.5 nm. HRTEM images show that CQDs have obvious lattice fringes with a lattice gap of 0.21 nm, which proves that CQDs possess a carbon core structure similar to graphite carbon (100).

Figure 2 
               TEM images of the CQDs.
Figure 2

TEM images of the CQDs.

The preparation of PI requires imidization at 335°C. To investigate the stability of CQDs at high temperatures, we annealed CQDs at 200°C, 250°C, and 335°C, respectively, and marked the samples as CQDs T200, CQDs T250, and CQDs T335. CQDs under different conditions were analyzed using FT-IR (Figure 3). The annealed CQDs contained carboxyl group (1,706 cm−1), hydroxyl, and amino group (3,437 cm−1). The absorption peaks of functional groups of CQDs treated by annealing at different temperatures remained roughly the same, indicating that the structure of CQDs remained stable in the process of imidization.

Figure 3 
               FT-IR image of CQDs.
Figure 3

FT-IR image of CQDs.

The imidization degree of PAA has a great influence on the mechanical and dielectric properties of PI/CQD composite films. The chemical structures of PAA, PI, PI/CQD composite films were characterized using FT-IR technique. Figure 4a depicts that the stretching vibration absorption peaks of carboxyl group (1,709 cm−1) and amide group (1,661 cm−1) in PAA are transformed into asymmetric stretching vibration peak (1,776 cm−1) and symmetrical stretching vibration peak (1,717 cm−1) after high-temperature imidization, and the FT-IR spectra of PI possessed the bending vibration absorption peak (745 cm−1) of imide structure. As the chemical bonds between CQDs and PI produce bond cooperation, the position of the functional group of CQDs is offset. As shown in the following SEM images (Figure 4b and c), the CQDs were well dispersed in PI, where no obvious aggregation of CQDs in PI was observed.

Figure 4 
               (a) FT-IR spectra of PAA, PI, PI/CQDs, (b) SEM image of the PI fracture surface, and (c) SEM image of the PI/CQD fracture surface.
Figure 4

(a) FT-IR spectra of PAA, PI, PI/CQDs, (b) SEM image of the PI fracture surface, and (c) SEM image of the PI/CQD fracture surface.

Figure 5 shows the dielectric properties of PI/CQD composite films. The dielectric permittivity of pure PI film is about 3.4, and dielectric loss is about 0.0057. The dielectric permittivity of PI/CQD composite film can reach more than 4.5 at CQDs account for 10%, which is about 32% higher than pure PI film, and higher than the reported fluorinated PI (48). The dielectric loss is about 0.0018 at CQDs account for 4%, which is about 68% lower than pure PI film and other PI-related materials, such as PI–Yb complex (49), PI/CCTO@Ag composites (12), and PI-clay (50).

Figure 5 
               Dielectric property of PI/CQD composites: (a) dielectric permittivity at different frequencies, (b) dielectric loss at different frequencies, (c) dielectric property on the weight fraction at 1 kHz, and (d) the Weibull distribution of dielectric breakdown strength.
Figure 5

Dielectric property of PI/CQD composites: (a) dielectric permittivity at different frequencies, (b) dielectric loss at different frequencies, (c) dielectric property on the weight fraction at 1 kHz, and (d) the Weibull distribution of dielectric breakdown strength.

When the amount of CQDs is relatively low, it can quickly adapt to the change of external electric field through the deviation of its own electron cloud, so the energy loss is diminished. In addition, the bond cooperation between CQDs and PI molecular chain prevents the relative movement of the PI molecular chain, resulting in the reduction of dielectric loss. When the proportion of CQDs is high, there will be an obvious phase interface between CQDs and PI chain segment, and interface polarization will occur under the action of the electric field, leading to large energy loss.

Breakdown strength is a physical quantity that is used to characterize the maximum electric field strength of the material, mainly determined by its own physical and chemical properties. The two-parameter Weibull distribution was used to analyze the breakdown strength data and related formulas are as follows (Eqs. 13):

(1) P = 1 exp [ E E 0 β ]

(2) P i = i 0 . 44 n + 0 . 25 × 100 %

(3) log [ In ( 1 P ) ] = β log E β log E 0

where P is the cumulative probability density of electrical breakdown of the sample, β is the shape factor, E 0 is the scaling factor, i is the result of ordering E from smallest to largest, and N is the number of samples (51,52). Figure 5d shows the linear fitting results of PI/CQD composite films and the breakdown strength of PI/CQD composite films calculated at 63.2% failure possibility. As shown in Table 1, with the increase in CQD content, the breakdown strength first increases and then decreases, which is consistent with the changing trend of dielectric loss, confirming the above statement. When the content of CQDs is 4%, the breakdown strength of PI/CQD composite film reaches the maximum 222.46 kV·mm−1. When the content of CQDs is 10%, the breakdown strength of PI/CQD composite film is reduced to 138.04 kV·mm−1.

Table 1

Weibull analysis of breakdown strength

Weight fraction of CQDs (%) Shape parameter Weibull E break (kV·mm−1)
0 14.17 168.66
2 12.61 217.27
3 10.88 222.47
4 11.25 226.46
5 13.47 224.35
6 14.96 186.21
8 11.64 152.05
10 14.05 138.04

Mechanical properties are an important consideration for high dielectric polymer matrix composites. Figure 6 shows that with the increase of CQD content, the mechanical properties of PI/CQD composite films decrease slightly. The tensile strength of pure PI film is 209 kPa, and when CQD content is 10%, the tensile strength decreases to 150 kPa. The elongation at break of pure PI film is 12.8%, which decreases to 6.2% when CQD content is 10%. Due to the phenomenon of uneven distribution occurring when the content of CQDs is high, part of the mechanical property of PI/CQD composite film is lost.

Figure 6 
               Mechanical properties of PI/CQD composite films: (a) stress–strain curve, (b) the variation trend of stress and strain with CQD content.
Figure 6

Mechanical properties of PI/CQD composite films: (a) stress–strain curve, (b) the variation trend of stress and strain with CQD content.

Figure 7 shows the relevant thermal properties of PI/CQD composite films. Figure 7a and b shows TGA analysis of PI/CQD composite membrane. The T5% of pure PI is 556°C, and the composite films decrease slightly as the fraction of CQDs increases. When the content of CQDs is 10%, the T5% is 535°C. At 800°C, the residual rate of PI/CQDs decreases with the increase in CQD content. The residual rate of pure PI is 59.7%, and when the fraction of CQDs is 10%, the residual rate of PI/CQD composite films is 51.2%. The heat resistance of PI/CQD composite film decreases compared with that of PI. Because CQDs will degrade at higher temperatures, the heat resistance of PI/CQD composite film will decrease.

Figure 7 
               Thermal properties of PI/CQD composite films: (a) TGA analysis of PI/CQD composite films, (b) residual rate of PI/CQD composite films at different temperatures, and (c) DMA analysis of PI/CQD composite films.
Figure 7

Thermal properties of PI/CQD composite films: (a) TGA analysis of PI/CQD composite films, (b) residual rate of PI/CQD composite films at different temperatures, and (c) DMA analysis of PI/CQD composite films.

DMA can measure the relationship between the mechanical loss factor and temperature of the polymer under vibration load. Figure 7c is the DMA analysis of PI/CQD composite films. As the temperature increases, the glass transition temperature of PI/CQD composite film increases slightly. The loss factor increased obviously. The glass transition temperature increased from 291°C to 303°C by 4.12%. The loss factor was increased from 0.25 to 0.38 by 52%. It can be seen that the addition of CQDs reduces the heat resistance of PI film. Because the crosslinked structure between CQDs and PI can inhibit the vibration of the PI molecular chain, the glass transition temperature of PI/CQD composite film increases slightly. The introduction of CQDs reduces the heat resistance of PI, so the loss factor of PI/CQD composite film increases.

4 Conclusion

In this work, PI/CQDs composite films are prepared by introducing CQDs into the PI matrix. Through characterizations, it is found that compared with pure PI film, PI/CQD composite film possesses lower dielectric losses. When the content of CQDs is 4%, the dielectric loss of PI/CQDs composite film is the lowest, which is 0.0018 at 1 kHz voltage, reducing by 68%. Under the premise of relatively stable dielectric permittivity, and good mechanical and thermal properties, dielectric loss is reduced. The formation of the cross-linked structure between CQDs and PI molecules hinders the relative movement of the PI molecular chain and could be attributed to the dielectric loss of the PI/CQD composite film.

  1. Funding information: This work is financially supported by the Natural Science Foundation of China (52173006, 21975111), and the Jiangxi Provincial Natural Science Foundation (No. 20202BABL213007, No. 20212BAB203013).

  2. Author contributions: Yuyin Zhang: writing – original draft, writing – review and editing, formal analysis; methodology, investigation; Hongtao Guo: writing – review and editing, visualization; Haoqing Hou: methodology, formal analysis, project administration; Shaohua Jiang: analysis, project administration; Guojun Zha: visualization, project administration; Kunming Liu: visualization, resources; Zhaoyu Hu: methodology.

  3. Conflict of interest: One of the corresponding authors of this article (Shaohua Jiang) is an Associate Editor of e-Polymers.

  4. Data availability statement: The data and the experimental details during the current study are available from the corresponding author.

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Received: 2022-04-12
Revised: 2022-05-18
Accepted: 2022-05-23
Published Online: 2022-07-12

© 2022 Yuyin Zhang et al., published by De Gruyter

This work is licensed under the Creative Commons Attribution 4.0 International License.

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