Band 13, Heft 10 - Special Issue: Infrared and Terahertz Quantum Technologies

Over the past few decades, THz technology has made considerable progress, evidenced by the performance of current THz sources and detectors, as well as the emergence of several THz applications. However, in the realm of quantum technologies, the THz spectral domain is still in its infancy, unlike neighboring spectral domains that have flourished in recent years. Notably, in the microwave domain, superconducting qubits currently serve as the core of quantum computers, while quantum cryptography protocols have been successfully demonstrated in the visible and telecommunications domains through satellite links. The THz domain has lagged behind in these impressive advancements. Today, the current gap in the THz domain clearly concerns quantum technologies. Nonetheless, the emergence of quantum technologies operating at THz frequencies will potentially have a significant impact. Indeed, THz radiation holds significant promise for wireless communications with ultimate security owing to its low sensitivity to atmospheric disturbances. Moreover, it has the potential to raise the operating temperature of solid-state qubits, effectively addressing existing scalability issues. In addition, THz radiation can manipulate the quantum states of molecules, which are recognized as new platforms for quantum computation and simulation with long range interactions. Finally, its ability to penetrate generally opaque materials or its resistance to Rayleigh scattering are very appealing features for quantum sensing. In this perspective, we will discuss potential approaches that offer exciting prospects for generating and detecting non-classical states of THz light, thereby opening doors to significant breakthroughs in THz quantum technologies.

In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.

Since the beginning of this millennium, frequency comb generators have reshaped frequency metrology and related areas. After more than two decades since their first realization, several other ways to generate frequency combs, in any spectral region, have been demonstrated, each way with its peculiar features. This trend has triggered the need to quantitatively assess how close the new comb realizations are to an ideal comb, a feature that will be called combness throughout this paper. We will briefly review the very dynamic area of novel frequency comb sources and we will describe the techniques that have been recently developed to quantitatively assess the key parameters of old and new frequency combs, in view of the specific applications. Finally, we will try to sketch future steps in this recently born research area.

We investigate the THz intersubband absorption behavior of a single 40-nm wide GaAs/AlGaAs square quantum well (QW) using Johnson noise thermometry. In our measurements, the Johnson noise associated with intersubband absorption is measured from the in-plane conduction channel of the QW while its intersubband absorption behavior is being tuned through the independent control of the charge density and the perpendicular DC electric field. Our measurements enable the study of intersubband absorption of a small (∼20,000 and potentially fewer) number of electrons in a single mesoscopic device, as well as direct measurement of the electron heating from intersubband absorption. By measuring the Johnson noise response to monochromatic THz radiation at 2.52 THz and 4.25 THz at 20 K as a function of the DC electric field over a wide range of charge density, we show that the observed Johnson noise behavior correlates well with the expected intersubband absorption of the 40-nm QW. To explain the absorption features of the experimental results, we model the data by calculating the THz coupling efficiency based on the impedance model for intersubband absorption, which qualitatively reproduces the observed Johnson noise behavior well. Based on the temperature calibration of the Johnson noise measured at 2.52 THz, we deduce an increase in the electron temperature Δ T e of ∼ 35 ${\sim} 35$  K when the maximum absorption of THz power occurs in the device.

We propose a method to extract the upper laser level’s (ULL’s) excess electronic temperature from the analysis of the maximum light output power ( P max ) and current dynamic range Δ J d = ( J max − J th ) of terahertz quantum cascade lasers (THz QCLs). We validated this method, both through simulation and experiment, by applying it on THz QCLs supporting a clean three-level system. Detailed knowledge of electronic excess temperatures is of utmost importance in order to achieve high temperature performance of THz QCLs. Our method is simple and can be easily implemented, meaning an extraction of the excess electron temperature can be achieved without intensive experimental effort. This knowledge should pave the way toward improvement of the temperature performance of THz QCLs beyond the state-of-the-art.

Design strategies for improving terahertz (THz) quantum cascade lasers (QCLs) in the 5–6 THz range are investigated numerically and experimentally, with the goal of overcoming the degradation in performance that occurs as the laser frequency approaches the Reststrahlen band. Two designs aimed at 5.4 THz were selected: one optimized for lower power dissipation and one optimized for better temperature performance. The active regions exhibited broadband gain, with the strongest modes lasing in the 5.3–5.6 THz range, but with other various modes observed ranging from 4.76 to 6.03 THz. Pulsed and continuous-wave (cw) operation is observed up to temperatures of 117 K and 68 K, respectively. In cw mode, the ridge laser has modes up to 5.71 THz – the highest reported frequency for a THz QCL in cw mode. The waveguide loss associated with the doped contact layers and metallization is identified as a critical limitation to performance above 5 THz.

By employing a graded-interfaces model based on a generalized formalism for interface-roughness (IFR) scattering that was modified for mid-infrared emitting quantum cascade lasers (QCLs), we have accurately reproduced the electro-optical characteristics of published record-performance 4.9 µm- and 8.3 µm-emitting QCLs. The IFR-scattering parameters at various interfaces were obtained from measured values and trends found via atom-probe tomography analysis of one of our 4.6 μm-emitting QCL structures with variable barrier heights. Those values and trends, when used for designing a graded-interface, 4.6 μm-emitting QCL, led to experimental device characteristics in very good agreement with calculated ones. We find that the published record-high performance values are mainly due to both injection from a prior-stage low-energy (active-region) state directly into the upper-laser ( ul ) level, thus at low field-strength values, as well as to strong photon-induced carrier transport. However, the normalized leakage-current density J leak / J is found to be quite high: 26–28 % and 23.3 %, respectively, mainly because of IFR-triggered shunt-type leakage through high-energy active-region states, in the presence of high average electron temperatures in the ul laser level and an energy state adjacent to it: 1060 K and 466 K for 4.9 µm- and 8.3 µm-emitting QCLs, respectively. Then, modeling with graded interfaces becomes a tool for designing devices of performances superior to the best reported to date, thus closing in on fundamental limits. The model is employed to design a graded-interface 8.1 µm-emitting QCL with suppressed carrier leakage via conduction-band engineering, which reaches a maximum front-facet wall-plug efficiency value of 22.2 %, significantly higher than the current record (17 %); thus, a value close to the fundamental front-facet, upper limit (i.e., 25 %) for ∼8 µm-emitting QCLs.

Heterodyne detection based on interband cascade lasers (ICL) has been demonstrated in a wide range of different applications. However, it is still often limited to bulky tabletop systems using individual components such as dual laser setups, beam shaping elements, and discrete detectors. In this work, a versatile integrated ICL platform is investigated for tackling this issue. A RF-optimized, two-section ICL approach is employed, consisting of a short section typically used for efficient modulation of the cavity field and a long gain section. Such a laser is operated in reversed mode, with the entire Fabry–Pérot waveguide utilized as a semiconductor optical amplifier (SOA) and the electrically separated short section as detector. Furthermore, a racetrack cavity is introduced as on-chip single-mode reference generator. The field of the racetrack cavity is coupled into the SOA waveguide via an 800 nm gap. By external injection of a single mode ICL operating at the appropriate wavelength, a heterodyne beating between the on-chip reference and the injected signal can be observed on the integrated detector section of the SOA-detector.

We report room temperature heterodyne detection of a quantum cascade laser beaten with a local oscillator on a unipolar quantum photodetector in two different atmospheric windows, at 4.8 µm and 9 µm. A noise equivalent power of few pW is measured by employing an active stabilization technique in which the local oscillator and the signal are locked in phase. The measured heterodyne noise equivalent power is six orders of magnitude lower than that obtained with direct detection.

InAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates are presented. This material system offers intrinsic performance-improving properties, like a low effective electron mass of the well material of 0.026 m 0 , enhancing the optical transition strength, and a high conduction band offset of 2.28 eV, reducing the noise and allowing for high optical transition energies. InAs and AlSb strain balance each other on GaSb with an InAs:AlSb ratio of 0.96:1. To regain the freedom of a lattice-matched material system regarding the optimization of a QCD design, submonolayer InSb layers are introduced. With strain engineering, four different active regions between 3.65 and 5.5 µm were designed with InAs:AlSb thickness ratios of up to 2.8:1, and subsequently grown and characterized. This includes an optimized QCD design at 4.3 µm, with a room-temperature peak responsivity of 26.12 mA/W and a detectivity of 1.41 × 10 8  Jones. Additionally, all QCD designs exhibit higher-energy interband signals in the mid- to near-infrared, stemming from the InAs/AlSb type-II alignment and the narrow InAs band gap.

We present a theoretical investigation of guided second harmonic generation at THz frequencies in SiGe waveguides embedding n-type Ge/SiGe asymmetric coupled quantum wells to engineer a giant second order nonlinear susceptibility. A characteristic of the chosen material system is the existence of large off-diagonal elements in the χ 2 tensor, coupling optical modes with different polarization. To account for this effect, we generalize the coupled-mode theory, proposing a theoretical model suitable for concurrently resolving every second harmonic generation interaction among guide-sustained modes, regardless of which χ 2 tensor elements it originates from. Furthermore, we exploit the presence of off-diagonal χ 2 elements and the peculiarity of the SiGe material system to develop a simple and novel approach to achieve perfect phase matching without requiring any fabrication process. For a realistic design of the quantum heterostructure we estimate second order nonlinear susceptibility peak values of ∼7 and ∼1.4 × 10 5  pm/V for diagonal and off diagonal χ 2 elements, respectively. Embedding such heterostructure in Ge-rich SiGe waveguides of thicknesses of the order of 10–15 μm leads to second harmonic generation efficiencies comprised between 0.2 and 2 %, depending on the choice of device parameters. As a case study, we focus on the technologically relevant frequency of 7.1 THz, yet the results we report may be extended to the whole 5–20 THz range.

A parabolic potential that confines charge carriers along the growth direction of quantum wells semiconductor systems is characterized by a single resonance frequency, associated to intersubband transitions. Motivated by fascinating quantum optics applications leveraging on this property, we use the technologically relevant SiGe material system to design, grow, and characterize n-type doped parabolic quantum wells realized by continuously grading Ge-rich Si 1− x Ge x alloys, deposited on silicon wafers. An extensive structural analysis highlights the capability of the ultra-high-vacuum chemical vapor deposition technique here used to precisely control the quadratic confining potential and the target doping profile. The absorption spectrum, measured by means of Fourier transform infrared spectroscopy, revealed a single peak with a full width at half maximum at low and room temperature of about 2 and 5 meV, respectively, associated to degenerate intersubband transitions. The energy of the absorption resonance scales with the inverse of the well width, covering the 2.5–5 THz spectral range, and is almost independent of temperature and doping, as predicted for a parabolic confining potential. On the basis of these results, we discuss the perspective observation of THz strong light–matter coupling in this silicon compatible material system, leveraging on intersubband transitions embedded in all-semiconductor microcavities.

This study reports the experimental demonstration of the first waveguide-integrated SiGe modulator using a PIN diode operating in a wide spectral range of the mid-infrared region. At the wavelength of 10 µm, an extinction ratio up to 10 dB is obtained in injection regime and 3.2 dB in depletion regime. High speed operation is obtained, up to 1.5 GHz. Furthermore, the device can also operate as an integrated photodetector. Photodetection has thus been characterized from 5.2 µm to 10 µm wavelengths showing an internal responsivity around 1 mA/W, and a 3 dB electro-optical bandwidth of 32 MHz. These results show a significant advancement in integrated photodetectors and electro-optical modulators for mid-infrared spectroscopy.

The longwave infrared (LWIR) range, which spans from 6 µm to 14 µm, is appealing for sensing due to strong molecular fingerprints in this range. However, the limited availability of low-loss materials that can provide higher-index waveguiding and lower-index cladding in the LWIR range presents challenges for integrated photonics. In this work, we introduce a low-loss germanium-on-zinc selenide (GOZ) platform that could serve as a versatile platform for nanophotonics in the LWIR. By bonding high-quality thin-film germanium (Ge) to a zinc selenide (ZnSe) substrate, we demonstrate transparency from 2 µm to 14 µm and optical losses of just 1 cm −1 at 7.8 µm. Our results demonstrate that hybrid photonic platforms could be invaluable for overcoming the losses of epitaxially grown materials and could enable a wide range of future quantum and nonlinear photonics.

In research and engineering, short laser pulses are fundamental for metrology and communication. The generation of pulses by passive mode-locking is especially desirable due to the compact setup dimensions, without the need for active modulation requiring dedicated external circuitry. However, well-established models do not cover regular self-pulsing in gain media that recover faster than the cavity round trip time. For quantum cascade lasers (QCLs), this marked a significant limitation in their operation, as they exhibit picosecond gain dynamics associated with intersubband transitions. We present a model that gives detailed insights into the pulse dynamics of the first passively mode-locked QCL that was recently demonstrated. The presence of an incoherent saturable absorber, exemplarily realized by multilayer graphene distributed along the cavity, drives the laser into a pulsed state by exhibiting a similarly fast recovery time as the gain medium. This previously unstudied state of laser operation reveals a remarkable response of the gain medium on unevenly distributed intracavity intensity. We show that in presence of strong spatial hole burning in the laser gain medium, the pulse stabilizes itself by suppressing counter-propagating light and getting shortened again at the cavity facets. Finally, we study the robustness of passive mode-locking with respect to the saturable absorber properties and identify strategies for generating even shorter pulses. The obtained results may also have implications for other nanostructured mode-locked laser sources, for example, based on quantum dots.

Optical frequency comb synthesizers, operating in the harmonic regime, are metrological sources in which the emitted optical power is concentrated in a few modes, spaced by several multiples of the cavity free spectral range (FSR). This behavior reflects in a large correlation degree and, in principle, in an increased optical power per mode. In miniaturized quantum cascade lasers (QCLs), harmonic frequency combs (HFCs) are hence particularly attracting to explore quantum correlation effects between adjacent harmonic modes, enabled by the inherently large gain media third-order χ (3) Kerr nonlinearity, even if controlled generation of stable HFCs of predefined order, is typically demanding in such electrically pumped sources. Here, we demonstrate stable 2 nd order and 3 rd order HFC emission in terahertz frequency QCLs by respectively patterning an individual or a couple of equally spaced distributed multilayer graphene absorbers on the top metallic waveguides.

We have performed an investigation into the optical conductivity and magnetotransport properties of top-gated devices patterned on the topological insulator Bi 2 Se 3 in order to determine the relative effects of the different carrier species that exist within these novel materials. We find that the topologically protected surfaces within our samples are partially screened from the action of the gate by trivial band-bending states formed at the top surface of the topological insulator. Despite this, the mobility of the topological surface carriers is significantly affected by the application of an external gate bias. Additionally, we find that the optical conductivity response is dominated by the topologically protected surface states, and that the optical conductivity is particularly sensitive to the scattering caused by the topological surfaces coupling to trivial states, arising from the bulk or band-bending induced surface states. These results will have interesting applications to the design of future plasmonic devices that incorporate topological materials.

The volume plasmon modes of a confined electron gas are engineered in a step-like semiconductor potential, which induces the formation of adjacent regions of different charge density. Each region supports spatially localized collective modes. Adjacent modes are theoretically demonstrated to couple, forming delocalized modes, which are well-described with a hybridization picture. Exploiting the thin-film Berreman effect, the engineered plasmon modes are directly observed in optical measurements. Using a quantum microscopic theory, the asymmetry of the single-particle electronic states is shown to be directly imprinted on the nonuniform polarization of the collective modes.

Time-resolved terahertz spectroscopy is used to investigate formation and ultrafast long-distance propagation of electron–hole plasma in strongly photoexcited GaAs and InP. The observed phenomena involve fundamental interactions of electron–hole system with light, which manifest themselves in two different regimes: a coherent one with the plasma propagation speeds up to c /10 (in GaAs at 20 K) and an incoherent one reaching up to c /25 (in InP at 20 K), both over a macroscopic distance >100 μm. We explore a broad range of experimental conditions by investigating the two materials, by tuning their band gap with temperature and by controlling the interaction strength with the optical pump fluence. Our interpretation suggests that the observed phenomena should occur in most direct band semiconductors upon strong photoexcitation with low excess energy.

Spectroscopy of shallow donors is a tool to test theoretical models and to reveal properties of semiconductors. In this work we consider intra-shallow impurity transitions by studying a CdTe/(Cd, Mg)Te structure grown by a molecular beam epitaxy in which both a CdTe quantum well and (Cd, Mg)Te barries are uniformly doped with iodine donors. Measurements of a photocurrent (PC) at the far-infrared were carried out at 4.2 K and magnetic fields B up to 7 T with the energy of photons originated from a molecular laser in the range 2.2 meV–12.8 meV. Spectra (a PC signal vs. B , at a constant energy of photons) show lines which position does not depend on the photon energy but shifts with the in-plane electric field. These dependencies, which do not follow a well-established picture of shallow donor magnetospectroscopy in quantum wells, are explained within a model which unifies the role of fluctuations of the electrostatic potential and a magnetic-field induced electron localization.

We investigate the electronic transport at the internal interface within a selection of metallic bilayer nanostructures using the contact-free, all-optical method of THz time-domain spectroscopy. The Ru/Co, Ru/Pt, and Ru/Al bilayer nanostructures and their individual constituent metals are studied, with Ru representing an archetypal d -band metal, Co an archetypal ferromagnet, and Pt and Al archetypal heavy and light metals, respectively. The THz conductivity data were analyzed in terms of Drude and Bloch–Grüneisen models, and the interface current coefficient of the internal nanointerface was determined. Strong temperature dependency of the interface current coefficient in the Ru/Co nanostructure is revealed.

We describe the design of two types of metamaterials aimed at enhancing terahertz field pulses that can be used to control the magnetic state in condensed matter systems. The first structure is a so-called “dragonfly” antenna, able to realize a five-fold enhancement of the impinging terahertz magnetic field, while preserving its broadband features. For currently available state-of-the-art table top sources, this leads to peak magnetic fields exceeding 1 T. The second structure is an octopole antenna aimed at enhancing a circularly-polarized terahertz electric field, while preserving its polarization state. We obtain a five-fold enhancement of the electric field, hence expected to exceed the 1 MV/cm peak amplitude. Both our structures can be readily fabricated on top of virtually any material.

Spintronic terahertz emitters (STEs), based on optical excitation of nanometer thick ferromagnetic/heavy metal (FM/HM) heterojunctions, have become important sources for the generation of terahertz (THz) pulses. However, the efficiency of the optical-to-THz conversion remains limited. Although optical techniques have been developed to enhance the optical absorption, no investigations have studied the application of THz cavities. Here, to enhance the THz efficiency of STEs in a selected THz spectral range, FM/HM structures are realized on ultra-thin sapphire layers with metallic mirrors to create λ /4 THz resonant cavities. THz emission time domain spectroscopy of these STE/sapphire/mirror heterostructures, with sapphire thicknesses ranging from 110 µm to 25 µm, shows enhancement of the emitted THz field that fits the λ /4 cavity resonance with up to a doubling of the field in the spectrum, and in agreement with temporal simulations of the emitted THz pulse. By taking advantage of birefringent materials, we further show the potential of control of the polarization state of the emitted THz pulse. This work shows the potential of enhancing and engineering THz emission from STEs using THz cavities that can be controlled over a broad spectral range, which can be easily combined with optical cavities.

The central theme of cavity quantum electrodynamics is the coupling of a single optical mode with a single matter excitation, leading to a doublet of cavity polaritons which govern the optical properties of the coupled structure. Especially in the ultrastrong coupling regime, where the ratio of the vacuum Rabi frequency and the quasi-resonant carrier frequency of light, Ω R / ω c , approaches unity, the polariton doublet bridges a large spectral bandwidth 2Ω R , and further interactions with off-resonant light and matter modes may occur. The resulting multi-mode coupling has recently attracted attention owing to the additional degrees of freedom for designing light–matter coupled resonances, despite added complexity. Here, we experimentally implement a novel strategy to sculpt ultrastrong multi-mode coupling by tailoring the spatial overlap of multiple modes of planar metallic THz resonators and the cyclotron resonances of Landau-quantized two-dimensional electrons, on subwavelength scales. We show that similarly to the selection rules of classical optics, this allows us to suppress or enhance certain coupling pathways and to control the number of light–matter coupled modes, their octave-spanning frequency spectra, and their response to magnetic tuning. This offers novel pathways for controlling dissipation, tailoring quantum light sources, nonlinearities, correlations as well as entanglement in quantum information processing.

Field effect transistors have shown promising performance as terahertz (THz) detectors over the past few decades. Recently, a quantum phenomenon, the in-plane photoelectric effect, was discovered as a novel detection mechanism in gated two-dimensional electron gases (2DEGs), and devices based on this effect, photoelectric tunable-step (PETS) THz detectors, have been proposed as sensitive THz detectors. Here, we demonstrate a PETS THz detector based on GaAs/AlGaAs heterojunction using a dipole antenna. We investigate the dependence of the in-plane photoelectric effect on parameters including the dimensions and the operating temperature of the device. Two figures of merit within the 2DEG, the maximum electric field and the radiation-induced ac-potential difference, are simulated to determine the optimal design of the PETS detector antenna. We identify the optimal antenna gap size, metal thickness, and 2DEG depth, and demonstrate the first PETS detector with a symmetric dipole antenna, which shows high-speed detection of 1.9 THz radiation with a strong photoresponse. Our findings deepen the understanding of the in-plane photoelectric effect and provide a universal guidance for the design of future PETS THz detectors.

Innovative terahertz waveguides are in high demand to serve as a versatile platform for transporting and manipulating terahertz signals for the full deployment of future six-generation (6G) communication systems. Metal-wire waveguides have emerged as promising candidates, offering the crucial advantage of sustaining low-loss and low-dispersion propagation of broadband terahertz pulses. Recent advances have opened up new avenues for implementing signal-processing functionalities within metal-wire waveguides by directly engraving grooves along the wire surfaces. However, the challenge remains to design novel groove structures to unlock unprecedented signal-processing functionalities. In this study, we report a plasmonic signal processor by engineering topological interface states within a terahertz two-wire waveguide. We construct the interface by connecting two multiscale groove structures with distinct topological invariants, i.e., featuring a π-shift difference in the Zak phases. The existence of this topological interface within the waveguide is experimentally validated by investigating the transmission spectrum, revealing a prominent transmission peak in the center of the topological bandgap. Remarkably, we show that this resonance is highly robust against structural disorders, and its quality factor can be flexibly controlled. This unique feature not only facilitates essential functions such as band filtering and isolating but also promises to serve as a linear differential equation solver. Our approach paves the way for the development of new-generation all-optical analog signal processors tailored for future terahertz networks, featuring remarkable structural simplicity, ultrafast processing speeds, as well as highly reliable performance.