Volume 13, Issue 22

The prospect of employing nanophotonic methods for controlling photon–electron interactions has ignited substantial interest within the particle accelerator community. Silicon-based integrated dielectric laser acceleration (DLA) has emerged as a viable option by leveraging localized photonic effects to emit, accelerate, and measure electron bunches using exclusively light. Here, using highly regular nanopatterning over large areas while preserving the crystalline structure of silicon is imperative to enhance the efficiency and yield of photon-electron effects. While several established fabrication techniques may be used to produce the required silicon nanostructures, alternative techniques are beneficial to enhance scalability, simplicity and cost-efficiency. In this study, we demonstrate the nano-synthesis of silicon structures over arbitrarily large areas utilizing exclusively deep ultraviolet (DUV) ultrafast laser excitation. This approach delivers highly concentrated electromagnetic energy to the material, thus producing nanostructures with features well beyond the diffraction limit. At the core of our demonstration is the production of silicon laser-induced surface structures with an exceptionally high aspect-ratio -reaching a height of more than 100 nm- for a nanostructure periodicity of 250 nm. This result is attained by exploiting a positive feedback effect on the locally enhanced laser electric field as the surface morphology dynamically emerges, in combination with the material properties at DUV wavelengths. We also observe strong nanopattern hybridization yielding intricate 2D structural features as the onset of amorphization takes place at high laser pulse fluence. This technique offers a simple, yet efficient and attractive approach to produce highly uniform and high aspect ratio silicon nanostructures in the 200–300 nm range.

Strong light–matter interactions have received a lot of attention, for example in the pursuit of plasmonic-excitonic structures as coherent light sources with low-power threshold. In this study, we investigate the influence of room temperature strong coupling between surface plasmon polaritons (SPP) and excitons on fluorescence lifetimes and photobleaching effects. Our plasmonic-photonic structure, comprising of thin silver (Ag) and gold (Au) layers with a Rhodamine 6G (R6G) dye layer, shows a clear shift in the plasmon resonance and R6G absorption lines with varying incident angles, indicative of strong coupling, with a measured Rabi splitting of approximately 90 meV. Fluorescence lifetime imaging microscopy (FLIM) was then employed to assess photobleaching, revealing a significant reduction in photobleaching effect for in strongly coupled plasmonic-excitonic structures compared to single Rhodamine R6G layers. Our findings indicate the pivotal role of strong light–matter interactions in reducing photobleaching effects and stabilizing fluorescence intensities, offering promising avenues for developing quantum multiparticle nanophotonic devices with enhanced stability and performance.

Due to signal shielding caused by building structures, conventional mature positioning technologies such as the Global Positioning System (GPS) are only suitable for outdoor navigation and detection. However, there are many scenarios that urgently require high-precision indoor positioning technologies, such as indoor wireless optical communications (OWCs), navigation in large buildings, and warehouse management. Here, we proposed a millimeter-precision indoor positioning technology based on metalens-integrated camera, which determines the position of the device through imaging of beacon LEDs. Thanks to the wide-angle imaging design of our metalens, the camera can accurately capture images of beacon LEDs even when it is situated in distant corner locations. Consequently, our localization scheme achieves millimeter-level positioning accuracy across majority of wide-angle (∼120°) indoor area. Compared to traditional positioning schemes by photodiode (PD), our imaging-based approach demonstrates superior resistance to interference, thereby safeguarding positioning precision from the external signals influence. Furthermore, the compact dimensions and high performances of the positioning device make it suitable for integration into highly portable devices, such as smartphones and drones, revealing its broad potential applications in the future.

Hyperthermia plays a significant role in cancer treatment by inducing cell damage through temperature elevation, often used alongside other treatment modalities. During hyperthermia therapy, temperature control is crucial. Here, we report on a simple synthesis route of hybrid plasmonic nanodiamonds either completely wrapped with an Au shell ( NV@Au ) or densely covered with Au NPs ( NV@SiO 2 @Au ). Such integration of nanodiamonds with Au NPs is advantageous both for heating and precise thermometry at nanoscale. After structural and optical investigations, heating abilities of the obtained plasmonic nanodiamonds were thoroughly inspected on glass, in association with living cells, and in tissue slices ex vivo , revealing their effective heat generation under excitation with light using a single excitation source. The developed hybrid plasmonic nanodiamonds were finally applied for local photothermal therapy of melanoma in vivo , demonstrating their efficacy in eradicating cancer cells and monitoring temperature during the process.

Once light is coupled to a photonic chip, its efficient distribution in terms of power splitting throughout silicon photonic circuits is very crucial. We present two types of 1 × 4 power splitters with different splitting ratios of 1:1:1:1 and 2:1:1:2. Various taper configurations were compared and analyzed to find the suitable configuration for the power splitter, and among them, parabolic tapers were chosen. The design parameters of the power splitter were determined by means of solving inverse design problems via incorporating particle swarm optimization that allows for overcoming the limitation of the intuition-based brute-force approach. The front and rear portions of the power splitters were optimized sequentially to alleviate local minima issues. The proposed power splitters have a compact footprint of 12.32 × 5 μm 2 and can be fabricated through a CMOS-compatible fabrication process. Two-stage power splitter trees were measured to enhance reliability in an experiment. As a result, the power splitter with a splitting ratio of 1:1:1:1 exhibited an experimentally measured insertion loss below 0.61 dB and an imbalance below 1.01 dB within the bandwidth of 1,518–1,565 nm. Also, the power splitter with a splitting ratio of 2:1:1:2 showed an insertion loss below 0.52 dB and a targeted imbalance below 1.15 dB within the bandwidth of 1,526–1,570 nm. Such inverse-designed power splitters can be an essential part of many large-scale photonic circuits including optical phased arrays, programmable photonics, and photonic computing chips.

Mode converters (MCs) play an essential role in mode-division multiplexing (MDM) systems. Numerous schemes have been developed on the silicon-on-insulator (SOI) platform, yet most of them focus solely on the conversion of fundamental mode to one or two specific higher-order modes. In this study, we introduce a hybrid shape optimization (HSO) method that combines particle swarm optimization (PSO) with adjoint methods to optimize the shape of the S-bend waveguide, facilitating the design of arbitrary-order MCs featuring compactness and high performance. Our approach was validated by designing a series of 13 μm-long MCs, enabling efficient conversion between various TE modes, ranging from TE 0 to TE 3 . These devices can be fabricated in a single lithography step and exhibit robust fabrication tolerances. Experiment results indicate that these converters achieve low insertion losses under 1 dB and crosstalks below −15 dB across bandwidths of 80 nm (TE 0 –TE 1 ), 62 nm (TE 0 –TE 2 ), 70 nm (TE 0 –TE 3 ), 80 nm (TE 1 –TE 2 ), 55 nm (TE 1 –TE 3 ), and 75 nm (TE 2 –TE 3 ). This advancement paves the way for flexible mode conversion, significantly enhancing the versatility of on-chip MDM technologies.

Efficient coupling between optical fibers and on-chip photonic waveguides has long been a crucial issue for photonic chips used in various applications. Edge couplers (ECs) based on an inverse taper have seen widespread utilization due to their intrinsic broadband operation. However, it still remains a big challenge to realize polarization-insensitive low-loss ECs working at the O-band (1,260–1,360 nm), mainly due to the strong polarization dependence of the mode coupling/conversion and the difficulty to fabricate the taper tip with an ultra-small feature size. In this paper, a high-efficiency and polarization-insensitive O-band EC is proposed and demonstrated with great advantages that is fully compatible with the current 130-nm-node fabrication processes. By introducing an asymmetric bi-level dual-core mode converter, the fundamental mode confined in the thick core is evanescently coupled to that in the thin core, which has an expanded mode size matched well with the fiber and works well for both TE/TM-polarizations. Particularly, no bi-level junction in the propagation direction is introduced between the thick and thin waveguide sections, thereby breaking the critical limitation of ultra-small feature sizes. The calculated coupling loss is 0.44–0.56/0.48–0.61 dB across the O-band, while achieving 1-dB bandwidths exceeding 340/230 nm for the TE/TM-polarization modes. For the fabricated ECs, the peak coupling loss is ∼0.82 dB with a polarization dependent loss of ∼0.31 dB at the O-band when coupled to a fiber with a mode field diameter of 4 μm. It is expected that this coupling scheme promisingly provides a general solution even for other material platforms, e.g., lithium niobate, silicon nitride and so on.

Spectroscopy is a technique that analyzes the interaction between matter and light as a function of wavelength. It is the most convenient method for obtaining qualitative and quantitative information about an unknown sample with reasonable accuracy. However, traditional spectroscopy is reliant on bulky and expensive spectrometers, while emerging applications of portable, low-cost and lightweight sensing and imaging necessitate the development of miniaturized spectrometers. In this study, we have developed a computational spectroscopy method that can provide single-shot operation, sub-nanometer spectral resolution, and direct materials characterization. This method is enabled by a metasurface integrated computational spectrometer and deep learning algorithms. The identification of critical parameters of optical cavities and chemical solutions is demonstrated through the application of the method, with an average spectral reconstruction accuracy of 0.4 nm and an actual measurement error of 0.32 nm. The mean square errors for the characterization of cavity length and solution concentration are 0.53 % and 1.21 %, respectively. Consequently, computational spectroscopy can achieve the same level of spectral accuracy as traditional spectroscopy while providing convenient, rapid material characterization in a variety of scenarios.

Achieving independent multitasked wavefront control by using an ultrathin plate is a challenge to increase information capacity in integration optics and radar applications. Transmission-reflection-integrated metasurface provides an efficient recipe primarily for multifunctional meta-device, however it is challenging to synergize both linear polarization (LP) and circular polarization (CP) using a single meta-plate. Here, a multichannel full-space coding metasurface composed of interleaved shared-aperture meta-atom is proposed to achieve large information capacity by capsulating judiciously engineered high efficiency triple sub-elements (modes) in four-layer scheme. By rotating dual-gap split ring resonator and varying size of “L” type structure insulating by a metallic ring with electrostatic-analogue shielding effect, both Pancharatnam–Berry (PB) and dynamic phases are independently realized under CP and LP waves, respectively. Such an extraordinary insulating strategy completely suppresses crosstalk among three modes and unprecedentedly increases the capability in yielding kaleidoscopic wavefront control. To verify the significance, a proof-of-concept metadevice is devised and experimentally demonstrated with tri-channel wavefront manipulations, exhibiting reflective dual-vortex beam and Bessel beam for forward and backward CP wave, respectively at high frequency, while transmissive polarization beam splitting for 45°-LP wave at low frequency. Our finding in polarization-direction multiplexing is expected to generate great interest in electromagnetic integration with emerging degree of freedoms.

Advancements in computer science have propelled society into an era of data explosion, marked by a critical need for enhanced data transmission capacity, particularly in the realm of space-division multiplexing and demultiplexing devices for fiber communications. However, recently developed mode demultiplexers primarily focus on mode divisions within one dimension rather than multiple dimensions (i.e., intensity distributions and polarization states), which significantly limits their applicability in space-division multiplexing communications. In this context, we introduce a neural network-assisted meta-router to recognize intensity distributions and polarization states of optical fiber modes, achieved through a single layer of metasurface optimized via neural network techniques. Specifically, a four-mode meta-router is theoretically designed and experimentally characterized, which enables four modes, comprising two spatial modes with two polarization states, independently divided into distinct spatial regions, and successfully recognized by positions of corresponding spatial regions. Our framework provides a paradigm for fiber mode demultiplexing apparatus characterized by application compatibility, transmission capacity, and function scalability with ultra-simple design and ultra-compact device. Merging metasurfaces, neural network and mode routing, this proposed framework paves a practical pathway towards intelligent metasurface-aided optical interconnection, including applications such as fiber communication, object recognition and classification, as well as information display, processing, and encryption.

In the rapidly evolving field of plasmonic metasurfaces, achieving homogeneous, reliable, and reproducible fabrication of sub-5 nm dielectric nanogaps is a significant challenge. This article presents an advanced fabrication technology that addresses this issue, capable of realizing uniform and reliable vertical nanogap metasurfaces on a whole wafer of 100 mm diameter. By leveraging fast patterning techniques, such as variable-shaped and character projection electron beam lithography (EBL), along with atomic layer deposition (ALD) for defining a few nanometer gaps with sub-nanometer precision, we have developed a flexible nanofabrication technology to achieve gaps as narrow as 2 nm in plasmonic nanoantennas. The quality of our structures is experimentally demonstrated by the observation of resonant localized and collective modes corresponding to the lattice, with Q-factors reaching up to 165. Our technological process opens up new and exciting opportunities to fabricate macroscopic devices harnessing the strong enhancement of light–matter interaction at the single nanometer scale.

Asymmetric spin–orbit interaction (ASOI) breaks the limitations in conjugate symmetry of traditional geometric phase metasurfaces, bringing new opportunities for various applications such as spin-decoupled holography, imaging, and complex light field manipulation. Since anisotropy is a requirement for spin–orbit interactions, existing ASOI mainly relies on meta-atom with C1 and C2 symmetries, which usually suffer from an efficiency decrease caused by the propagation phase control through the structural size. Here, we demonstrate for the first time that ASOI can be realized in meta-atoms with rotational symmetry ≥3 by combining the generalized geometric phase with the propagation phase. Utilizing an all-metallic configuration, the average diffraction efficiency of the spin-decoupled beam deflector based on C3 meta-atoms reaches ∼84 % in the wavelength range of 9.3–10.6 μm, which is much higher than that of the commonly used C2 meta-atoms with the same period and height. This is because the anisotropy of the C3 metasurface originates from the lattice coupling effect, which is relatively insensitive to the propagation phase control through the meta-atom size. A spin-decoupled beam deflector and hologram meta-device were experimentally demonstrated and performed well over a broadband wavelength range. This work opens a new route for ASOI, which is significant for realizing high-efficiency and broadband spin-decoupled meta-devices.

Optoelectronic synaptic devices have been regarded as the key component in constructing neuromorphic computing systems. However, the optoelectronic synapses based on conventional 2D transistor are still suffering low photosensitivity and volatile retention behavior, which can affect the recognition accuracy and long-term memory. Here, a novel optoelectronic synaptic device based on surface-state-rich CdSe nanobelt photosensitized 2D MoS 2 transistor is demonstrated. Benefiting from the excellent light absorption of CdSe and effective charge trapping at the hetero-interface, the device exhibits not only high photosensitivity but also long retention time (>1,500 s). In addition, typical synaptic functions including the excitatory postsynaptic current, paired-pulse facilitation, the transformation from short-term to long-term plasticity, the transformation from short-term to long-term plasticity, spike-amplitude-dependent plasticity, and learning-forgetting-relearning process are successfully simulated and modulated by light stimulation. Most importantly, an artificial neural network is simulated based on the optical potentiation and electrical habituation characteristics of the synaptic devices, with recognition accuracy rates of 89.2, 93.8, and 91.9 % for file type datasets, small digits, and large digits are achieved. This study demonstrates a simple and efficient way to fabricate highly photosensitive optoelectronic synapse for artificial neural networks by combining the merits of specific materials and device architecture.