On the line defects associated with grain boundary junctions
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Valéry Y. Gertsman
Abstract
Triple junctions of grain boundaries, being line defects themselves, can contain other line defects – dislocations and disclinations. Geometrical properties of such line defects are considered in this paper. While some extrinsic defects can be brought into or generated in the junction, others are intrinsic to the triple junction, satisfying requirements of equilibrated structure.
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© 2003 Carl Hanser Verlag, München
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- Personal/Personelles
- News
- DGM Events
Articles in the same Issue
- Frontmatter
- Articles/Aufsätze
- From atomistics to macro-behavior: structural superplasticity in micro- and nano-crystalline materials
- Interface stress in nanocrystalline materials
- Microstructure, frequency and localisation of pseudo-elastic fatigue strain in NiTi
- Intercrystalline defects and some properties of electrodeposited nanocrystalline nickel and its alloys
- Positrons as chemically sensitive probes in interfaces of multicomponent complex materials: Nanocrystalline Fe90Zr7B3
- Annealing treatments to enhance thermal and mechanical stability of ultrafine-grained metals produced by severe plastic deformation
- Nanoceramics by chemical vapour synthesis
- Deformation mechanism and inverse Hall – Petch behavior in nanocrystalline materials
- Simulations of the inert gas condensation processes
- Unconventional deformation mechanism in nanocrystalline metals?
- Alloying reactions in nanostructured multilayers during intense deformation
- Impact of grain boundary character on grain boundary kinetics
- Nanostructured (CoxFe1– x)3–yO4 spinel – mechanochemical synthesis
- Nanostructure formation and thermal stability of nanophase materials prepared by mechanical means
- Low-temperature plasma nitriding of AISI 304 stainless steel with nano-structured surface layer
- New materials from non-intuitive composite effects
- On the line defects associated with grain boundary junctions
- Young’s modulus in nanostructured metals
- The kinetics of phase formation in an ultra-thin nanoscale layer
- Notifications/Mitteilungen
- Personal/Personelles
- News
- DGM Events
