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Spontaneous generation of charged atoms or clusters during thermal evaporation of silver

  • In-Deok Jeon , Doh-Yeon Kim and Nong-Moon Hwang EMAIL logo
Published/Copyright: January 22, 2022
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Abstract

Spontaneous generation of charged atoms or clusters was investigated during thermal evaporation of silver. For this, the effect of the applied electric bias on the film growth rate was examined during evaporation of silver at 1373 K in a tungsten basket. Film growth rates on three silicon substrates biased + 300, 0 and –300 V with respect to the chamber were 300, 420 and 960 nm per hour, respectively. The number density of generated positively-charged atoms or clusters could be measured by the electric current on the Faraday cup in the chamber. From the temperature dependence of the positive current, the activation energy for charging was determined to be ~ 2.2 eV. This value could be best explained by the surface ionization of clusters of a few atoms on the oxidized tungsten surface.


Prof. Nong-Moon Hwang School Mater. Sci. & Eng, Seoul National University, Shinlim-dong, San 56-1, Kwanak-gu, Seoul 151-744, Korea Tel.: +82 2 880 8922 Fax: +82 2 883 8197

Dedicated to Professor Dr. Duk Yong Yoon on the occasion of his 65th birthday


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Received: 2004-08-25
Accepted: 2004-10-12
Published Online: 2022-01-22

© 2005 Carl Hanser Verlag, München

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