Abstract
Spontaneous generation of charged atoms or clusters was investigated during thermal evaporation of silver. For this, the effect of the applied electric bias on the film growth rate was examined during evaporation of silver at 1373 K in a tungsten basket. Film growth rates on three silicon substrates biased + 300, 0 and –300 V with respect to the chamber were 300, 420 and 960 nm per hour, respectively. The number density of generated positively-charged atoms or clusters could be measured by the electric current on the Faraday cup in the chamber. From the temperature dependence of the positive current, the activation energy for charging was determined to be ~ 2.2 eV. This value could be best explained by the surface ionization of clusters of a few atoms on the oxidized tungsten surface.
References
[1] N.M. Hwang: J. Crystal Growth 198/199 (1999) 945.10.1016/S0022-0248(98)01034-3Search in Google Scholar
[2] N.M. Hwang, I.D. Jeon, D.Y. Kim, in: H.I. Yoo, S.J.L. Kang (Eds.), Ceramic Interfaces 2, The Institute of Materials, London (2001) 85.Search in Google Scholar
[3] I.D. Jeon, C.J. Park, D.Y. Kim, N.M. Hwang: J. Crystal Growth 213 (2000) 79.10.1016/S0022-0248(00)00358-4Search in Google Scholar
[4] I.D. Jeon, C.J. Park, D.Y. Kim, N.M. Hwang: J. Crystal Growth 223 (2001) 6.10.1016/S0022-0248(00)01016-2Search in Google Scholar
[5] H.S. Ahn, H.M. Park, D.Y. Kim, N.M. Hwang: J. Crystal Growth 234 (2002) 399.10.1016/S0022-0248(01)01748-1Search in Google Scholar
[6] W.S. Cheong, N.M. Hwang, D.Y. Yoon: J. Crystal Growth 204 (1999) 52.10.1016/S0022-0248(99)00145-1Search in Google Scholar
[7] I.D. Jeon, L. Gueroudji, D.Y. Kim, N.M. Hwang: J. Korean Ceram. Soc. 38 (2001) 218.Search in Google Scholar
[8] M.C. Barnes, D.Y. Kim, H.S. Ahn, C.O. Lee, N.M. Hwang: J. Crystal Growth 213 (2000) 83.10.1016/S0022-0248(00)00359-6Search in Google Scholar
[9] M.C. Barnes, I.D. Jeon, D.Y. Kim, N.M. Hwang: J. Crystal Growth 242 (2002) 455.10.1016/S0022-0248(02)01417-3Search in Google Scholar
[10] B.S. Lee, M.C. Barnes, D.Y. Kim, N.M. Hwang: J. Crystal Growth 234 (2002) 599.10.1016/S0022-0248(01)01747-XSearch in Google Scholar
[11] I.D. Jeon, M.C. Barnes, D.Y. Kim, N.M. Hwang: J. Crystal Growth 247 (2003) 623.10.1016/S0022-0248(02)02058-4Search in Google Scholar
[12] D.R. Lide: CRC Handbook of Chemistry and Physics (1990–1991).Search in Google Scholar
[13] I. Langmuir, K.H. Kingdon, Proc. Roy. Soc. London, A 107 (1925) 61.10.1098/rspa.1925.0005Search in Google Scholar
[14] C. Jackschath, I. Rabin, W. Schulze: Z. Phys. D 22 (1992) 517.10.1007/BF01426093Search in Google Scholar
[15] U. Salian, S. Srinivas, J. Jellinek: Chem. Phys. Lett. 345 (2001) 312.10.1016/S0009-2614(01)00881-8Search in Google Scholar
© 2005 Carl Hanser Verlag, München
Articles in the same Issue
- Frontmatter
- Editorial
- Editorial
- Articles Basic
- Solute drag illustrated graphically
- Dopant effect on high-temperature plastic flow behavior and grain boundary chemistry in oxide ceramics
- Anomalous behaviour in diffusion impedance of intercalation electrodes
- A simple model of fully-faceted grain growth and coarsening with non-linear growth laws
- Thermal conductivity of functionally graded Fe–Cu–C alloy processed by liquid phase sintering and carburization
- Microstructure development during liquid-phase sintering
- The mechanical properties of a joint of Sn-3.5Ag-1Zn solder and Cu substrate with aging treatment
- Three-dimensional morphological characterization of coarsened microstructures
- Faceting and migration of twin grain boundaries in zinc
- Effect of external electric field on the microstructural evolution of La2O3-doped BaTiO3 ceramics
- Hardness and fracture toughness of ultra-fine WC-10Co-X cemented carbides prepared from nanocrystalline powders
- Systematic study of grain boundary atomistic structures and related properties in cubic zirconia bicrystals
- Spontaneous generation of charged atoms or clusters during thermal evaporation of silver
- The influence of singular surfaces and morphological changes on coarsening
- Electrical activity of grain boundaries in polycrystalline silicon – influences of grain boundary structure, chemistry and temperature
- Changes in the distribution of interfaces in PMN-35 mol% PT as a function of time
- Study of the effect of heat treatment on a Pt–Co thin film by Monte Carlo simulations coupled with a modified embedded atom method
- The influence of misorientation deviation on the faceting of Σ3 grain boundaries in aluminium
- Notifications/Mitteilungen
- Personal/Personelles
- Materials Week
- Conferences/ Konferenzen
Articles in the same Issue
- Frontmatter
- Editorial
- Editorial
- Articles Basic
- Solute drag illustrated graphically
- Dopant effect on high-temperature plastic flow behavior and grain boundary chemistry in oxide ceramics
- Anomalous behaviour in diffusion impedance of intercalation electrodes
- A simple model of fully-faceted grain growth and coarsening with non-linear growth laws
- Thermal conductivity of functionally graded Fe–Cu–C alloy processed by liquid phase sintering and carburization
- Microstructure development during liquid-phase sintering
- The mechanical properties of a joint of Sn-3.5Ag-1Zn solder and Cu substrate with aging treatment
- Three-dimensional morphological characterization of coarsened microstructures
- Faceting and migration of twin grain boundaries in zinc
- Effect of external electric field on the microstructural evolution of La2O3-doped BaTiO3 ceramics
- Hardness and fracture toughness of ultra-fine WC-10Co-X cemented carbides prepared from nanocrystalline powders
- Systematic study of grain boundary atomistic structures and related properties in cubic zirconia bicrystals
- Spontaneous generation of charged atoms or clusters during thermal evaporation of silver
- The influence of singular surfaces and morphological changes on coarsening
- Electrical activity of grain boundaries in polycrystalline silicon – influences of grain boundary structure, chemistry and temperature
- Changes in the distribution of interfaces in PMN-35 mol% PT as a function of time
- Study of the effect of heat treatment on a Pt–Co thin film by Monte Carlo simulations coupled with a modified embedded atom method
- The influence of misorientation deviation on the faceting of Σ3 grain boundaries in aluminium
- Notifications/Mitteilungen
- Personal/Personelles
- Materials Week
- Conferences/ Konferenzen