Startseite Grain growth in magnetron-sputtered nickel films
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Grain growth in magnetron-sputtered nickel films

  • T. Wagner EMAIL logo und D. Müller
Veröffentlicht/Copyright: 31. Januar 2022
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Abstract

Grain growth and texture development of magnetron-sputtered Ni films on thermally oxidized Si wafers were investigated as a function of sputtering and annealing atmospheres. Ni films of 1 μm thickness were sputtered in either pure Ar or an Ar–H2 gas mixture and subsequently annealed in high vacuum or a hydrogen atmosphere at 800 °C. The films were characterized by focused ion-beam microscopy and X-ray diffraction. The Ni films had a strong {111} texture after sputtering. Films sputtered in an Ar–H2 mixture and annealed in H2 underwent abnormal grain growth, resulting in a {100} texture. These films had a mean grain diameter of about 50 mm. The unusual abnormal grain growth is believed to be caused by a cleaning of the Ni films during sputtering and annealing in H2.


Dr. Thomas Wagner Max-Planck-Institut für Metallforschung Heisenbergstr. 3, D-70569 Stuttgart, Germany Tel.: +49 711 689 3434 Fax: +49 711 689 3412

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Received: 2002-02-02
Published Online: 2022-01-31

© 2002 Carl Hanser Verlag, München

Heruntergeladen am 24.9.2025 von https://www.degruyterbrill.com/document/doi/10.3139/ijmr-2002-0069/html
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