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Gallium segregation at grain boundaries in aluminium

  • S. Schmidt EMAIL logo , W. Sigle , W. Gust and M. Rühle
Published/Copyright: January 31, 2022

Abstract

The segregation of Ga at grain boundaries in polycrystalline Al was studied by analytical transmission electron microscopy. Al alloys containing 0.4, 2, and 7.8 at.% Ga were annealed, and the Ga excess at the grain boundary was determined. Segregation was detectable for volume concentrations of 2 and 7.8 at.% Ga. Embrittlement was observed only for the Al-7.8 at.% Ga alloy. The Ga excess was in the range 0.1 – 1.9 monolayers. The Gibbs segregation energies were determined for the first time ( – 110 to – 175 meV). It is concluded that in the Al –Ga system the well-known phenomenon of liquid metal embrittlement is far from thermal equilibrium.


S. Schmidt Max-Planck-Institut für Metallforschung Heisenbergstr. 3, D-70569 Stuttgart, Germany Tel.: +49 711 689 3683 Fax: +49 711 689 3512

  1. This research was financially supported by the Deutsche Forschungsgemeinschaft (project no. Si363/2-1).

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Received: 2002-02-18
Published Online: 2022-01-31

© 2002 Carl Hanser Verlag, München

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