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Bonding between Cu and α-Al2O3

  • Min Gao EMAIL logo , Christina Scheu , Thomas Wagner , Wolfgang Kurtz and Manfred Rühle
Published/Copyright: January 31, 2022

Abstract

This ongoing study aims to investigate systematically the influence of surface preparation methods on the bonding between Cu and α-Al2O3. High-spatial-resolution electron energy-loss spectroscopy and high-resolution transmission electron microscopy were used to study Cu/α-Al2O3 interfaces produced by molecular beam epitaxy and diffusion bonding. Our results show that the preparation of the Al2O3 surface can affect the interfacial bonding considerably. Only very weak adhesion between Cu and Al2O3 could be obtained for an Al2O3 substrate subjected to a chemical cleaning procedure followed by annealing. Ar+ ion pre-sputtering of the Al2O3 led to much stronger adhesion. Intermetallic-like interfacial bonding was observed in the samples on Al2O3 substrates annealed in ultra-high vacuum after pre-sputtering; whilst in the samples on Al2O3 substrates annealed in oxygen after the pre-sputtering, no significant bonding formed. High temperature and pressure applied in diffusion bonding production were not found to be determining factors for the interfacial bonding.


Dr. Min Gao Max-Planck-Institut für Metallforschung Heisenbergstr. 3, D-70569 Stuttgart, Germany Tel: +49 711 689 3684 Fax: +49 711 689 3512

  1. We thank M. Sycha and U. Salzberger for their excellent TEM specimen preparation. The authors wish to thank Dr. H. Lamparter and G. Maier for useful discussion on the X-ray diffraction experiments and to thank R. Höschen and Dr. F. Phillipp for the help at the ARM. The MBE samples were grown by M. Pudleiner. We appreciate Dr. A. Tomsia and Dr. Q. Fu for their helpful discussions. Thanks also to Dr. I. MacLaren for improving the English. M. G. wishes to thank the Alexander von Humboldt society for financial support.

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Received: 2002-02-28
Published Online: 2022-01-31

© 2002 Carl Hanser Verlag, München

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