Startseite Technik Combined ab-initio and N-K, Ti-L2,3, V-L2,3 electron energy-loss near edge structure studies for TiN and VN films
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Combined ab-initio and N-K, Ti-L2,3, V-L2,3 electron energy-loss near edge structure studies for TiN and VN films

  • Boriana Rashkova , Petr Lazar , Josef Redinger , Raimund Podloucky , Gerald Kothleitner , Sašo Šturm , Kerstin Kutschej , Christian Mitterer , Christina Scheu und Gerhard Dehm
Veröffentlicht/Copyright: 23. Mai 2013
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Abstract

In this work we examined the electronic structure of well-defined TiN/VN bilayers grown on a MgO(100) substrate by both experimentation and calculation. The electron energy-loss spectra were taken in transmission electron microscopes equipped with and without a monochromator. The experimental studies reveal nearly stoichiometric phases with atomic ratios Ti/N of 1.1 ± 0.1 and V/N of 1.2 ± 0.1. The comparison of the electron energy-loss near-edge structures of the N-K, Ti-L2,3, and V-L2,3 spectra with the theoretically calculated partial density of states using density functional theory revealed that core hole effects must be included. The calculations indicate that the N-K edge is sensitive to vacancies in the sublattice of VN. Thus, the N-K edge may be used as a fingerprint when studying non-stoichiometric or diffusional phenomena.


* Correspondence address, Dr. Boryana Rashkova, Erich Schmid Institute of Materials Science, Austrian Academy of Sciences and Department of Material Physics, University of Leoben, Jahnstraße 12, A-8700 Leoben, Austria, Tel.: +43 3842 804 412, Fax: +43 3842 804 116, E-mail:

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Received: 2007-4-4
Accepted: 2007-8-2
Published Online: 2013-05-23
Published in Print: 2007-11-01

© 2007, Carl Hanser Verlag, München

Artikel in diesem Heft

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  2. Contents
  3. Editorial
  4. Professor Dr. phil. Dr. techn. e. h. Hellmut F. Fischmeister
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