On the Importance of Gas Phase Chemistry in Two CVD Systems: Deposition of Silicon and Diamond
-
Burak Atakan
Abstract
Chemical vapor deposition (CVD) is an important method to produce thin films on various substrate materials. Most work concentrates on the quality of the resulting materials and on the surface chemistry, while gas phase chemistry is often overlooked. The present article discusses the role of gas phase chemistry for CVD processes at high growth rates by analysing two deposition systems. In silicon CVD, the gas phase reactions reduce the growth rate, while diamond CVD is impossible without gas phase activation prior to deposition. In both cases, a fundamental knowledge of these gas phase processes assists in obtaining high growth rates and in optimizing the CVD process.
Abstract
Chemische Dampfabscheidung ist eine wichtige Möglichkeit zur Erzeugung dünner Schichten auf unterschiedlichsten Werkstoffen. Meist konzentrieren sich die Arbeiten zu diesem Thema auf die Eigenschaften des hergestellten Materials und die Oberflächenchemie, während die Gasphasenchemie häufig übersehen wird. Anhand von zwei beispielhaften Untersuchungen wird die Bedeutung der Gasphasenchemie für CVD bei hohen Wachstumsraten gezeigt und erläutert. Bei der Abscheidung von Silizium reduzieren die ablaufenden Gasphasenreaktionen die Wachstumsrate, während Diamantwachstum ohne vorgelagerte Gasphasenrektionen unmöglich wäre. In beiden Fällen ist eine grundlegende Kenntnis dieser Gasphasen-Prozesse notwendig, um hohe Wachstumsraten zu erzielen und den CVD-Prozess zu optimieren.
References
1 Jones, A.C.; O’Brien, P.: CVD of Compound Semiconductors, VCH, Weinheim (1997).10.1002/9783527614639Search in Google Scholar
2 Rees, W.S.: CVD of Nonmetals, VCH, Weinheim (1996).10.1002/9783527614813Search in Google Scholar
3 Coltrin, M.E.; Kee, R.J.; Evans, G.H.; Meeks, E.; Rupley, F.M.; Grcar, J.F.: Spin (Version 3.83): A Fortran program for modeling one-dimensional rotating-disk/stagnation-flow chemical vapor deposition reactors; Sandia National Laboratories, Report SAND91–8003 (1993).Search in Google Scholar
4 Schierling, M.; Zimmermann, E.; Neuschütz, D.: J. Physique IV 9 (1999) 85.Search in Google Scholar
5 Zimmermann, E.; Wang, T.; Yu, C.H.; Neuschütz, D.: J. Electro-chem. Soc. 147 (2000) 2206.10.1149/1.1393508Search in Google Scholar
6 Hofstätter, M.; Atakan, B.; Kohse-Höinghaus, K.: J. Physique IV (2001), in press.Search in Google Scholar
7 Atakan, B.; Hofstätter, M.; Kohse-Höinghaus, K.: 199th Meeting of the Electrochem. Soc., Washington, DC (2001), in press.Search in Google Scholar
8 Wang, Y.B.; Teyssandier, F.; Simon, J.; Feurer, R.: J. Electrochem. Soc. 141 (1994) 824.10.1149/1.2054818Search in Google Scholar
9 Coltrin, M.E.; Kee, R.J.; Evans, G.H.: J. Electrochem. Soc. 136 (1989) 819.10.1149/1.2096750Search in Google Scholar
10 Kurobe, K.-I.; Fuyuki, T.; Matsunami, H.: Sol. Energ. Mater. Sol. Cells 66 (2001) 1.10.1016/S0927-0248(00)00151-3Search in Google Scholar
11 Lihui, G.; Rongming, L.: Thin Solid Films 376 (2000) 249.10.1016/S0040-6090(00)01210-4Search in Google Scholar
12 Rebhan, M.; Rohwerder, M.; M. Stratmann: Appl. Surf. Sci. 140 (1999) 99.10.1016/S0169-4332(98)00500-5Search in Google Scholar
13 Löwe, A. G.; Hartlieb, A. T.; Brand, J.; Atakan, B.; Kohse-Höing-haus, K.: Combust. Flame 118 (1999) 37.10.1016/S0010-2180(98)00165-5Search in Google Scholar
14 Bergmann, U.; Lummer, K.; Atakan, B.; Kohse-Höinghaus, K.: Ber. Bunsen. Phys. Chem. 102 (1998) 906.10.1002/bbpc.19981020703Search in Google Scholar
15 Atakan, B.; Beuger, M.; Kohse-Höinghaus, K.: Phys. Chem. Chem. Phys. 1 (1999) 705.10.1039/a808850kSearch in Google Scholar
16 Atakan, B.; Lummer, K.; Kohse-Höinghaus, K.: Phys. Chem. Chem. Phys. 1 (1999) 3151.10.1039/a901945fSearch in Google Scholar
17 Schermer, J.J.; van, E.W.J.P.; Giling, L.J.: Diam. Rel. Mater. 3 (1994) 408.10.1016/0925-9635(94)90194-5Search in Google Scholar
18 Meeks, E.; Kee, R.J.; Dandy, D.S.; Coltrin, M.E.: Combust. Flame 92 (1993) 144.10.1016/0010-2180(93)90204-GSearch in Google Scholar
19 Buss, R.J.; Ho, P.; Breiland, W.G.; Coltrin, M.E.: J. Appl. Phys. 63 (1988) 2808.10.1063/1.340982Search in Google Scholar
20 Dischler, B.; Wild, C.: Low Pressure Synthetic Diamond: Manufacturing and Applications, Springer, Berlin (1998).10.1007/978-3-642-71992-9Search in Google Scholar
21 Kohse-Höinghaus, K.; Löwe, A.G.; Atakan, B.: Thin Solid Films 368 (2000) 185.10.1016/S0040-6090(00)00762-8Search in Google Scholar
© 2001 Carl Hanser Verlag, München
Articles in the same Issue
- Frontmatter
- Editorial
- Dieter Neuschütz 65 Years
- Aufsätze/Articles
- Combinatorial Methods for Advanced Materials Research & Development
- Chemische Gasphasenabscheidung von SiC und SiC + Si auf Kohlenstoffsubstraten und ihre chemische Oberflächenmodifizierung
- Fabrication and Characterization of Hydrogen Absorption LaNi5 Alloy Films Sputtered on Nickel Substrate
- On the Importance of Gas Phase Chemistry in Two CVD Systems: Deposition of Silicon and Diamond
- Thermodynamic Prediction of Metastable Coating Structures in PVD Processes
- Setting Kinetic Controls for Complex Equilibrium Calculations
- Modeling of the Thermochemical Properties of Multicomponent Oxide Melts
- Subsolidus Phase Relationships of the β–Sialon Solid Solution in the Oxygen-Rich Part of the Nd–Si–Al–O–N System
- Investigation of Microstructure and Chemical Stability in Composites of NiAl Reinforced by Alumina-Silica Fibers
- Gesicherte Interpretationen der FTIR-Reflexionsspektren von SiC–CVD-Schichten durch Spektrensimulation
- Characterization of Cohesion, Adhesion and Creep-Properties of Dynamically Loaded Coatings through the Impact Tester
- Peculiarities of Diffusion Controlled Phase Formation in the Al–Co System
- Mitteilungen/Notifications
- Personen
- Bücher/Books
- Tagungen
Articles in the same Issue
- Frontmatter
- Editorial
- Dieter Neuschütz 65 Years
- Aufsätze/Articles
- Combinatorial Methods for Advanced Materials Research & Development
- Chemische Gasphasenabscheidung von SiC und SiC + Si auf Kohlenstoffsubstraten und ihre chemische Oberflächenmodifizierung
- Fabrication and Characterization of Hydrogen Absorption LaNi5 Alloy Films Sputtered on Nickel Substrate
- On the Importance of Gas Phase Chemistry in Two CVD Systems: Deposition of Silicon and Diamond
- Thermodynamic Prediction of Metastable Coating Structures in PVD Processes
- Setting Kinetic Controls for Complex Equilibrium Calculations
- Modeling of the Thermochemical Properties of Multicomponent Oxide Melts
- Subsolidus Phase Relationships of the β–Sialon Solid Solution in the Oxygen-Rich Part of the Nd–Si–Al–O–N System
- Investigation of Microstructure and Chemical Stability in Composites of NiAl Reinforced by Alumina-Silica Fibers
- Gesicherte Interpretationen der FTIR-Reflexionsspektren von SiC–CVD-Schichten durch Spektrensimulation
- Characterization of Cohesion, Adhesion and Creep-Properties of Dynamically Loaded Coatings through the Impact Tester
- Peculiarities of Diffusion Controlled Phase Formation in the Al–Co System
- Mitteilungen/Notifications
- Personen
- Bücher/Books
- Tagungen
