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Combinatorial Methods for Advanced Materials Research & Development

  • R. Cremer EMAIL logo , S. Dondorf , M. Hauck , D. Horbach , M. Kaiser , S. Kyrsta , O. Kyrylov , E. Münstermann , M. Philipps , K. Reichert and G. Strauch
Published/Copyright: January 13, 2022
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Abstract

The applicability of combinatorial methods in developing advanced materials is illustrated presenting four examples for the deposition and characterization of one- and two-dimensionally laterally graded coatings, which were deposited by means of (reactive) magnetron sputtering and plasma- enhanced chemical vapor deposition. To emphasize the advantages of combinatorial approaches, metastable hard coatings like (Ti,Al)N and (Ti,Al,Hf)N respectively, as well as Ge–Sb–Te based films for rewritable optical data storage were investigated with respect to the relations between structure, composition, and the desired materials properties.

Abstract

Die Anwendbarkeit kombinatorischer Methoden für die Entwicklung fortschrittlicher Werkstoffe wird an vier Beispielen zur Abscheidung und Charakterisierung ein- und zweidimensional gradierter Schichten verdeutlicht. Hierbei erfolgte die Abscheidung der Schichten sowohl mittels (reaktivem) Magnetronsputtern als auch mittels plasmaunterstützter chemischer Gasphasenabscheidung. Um die Vorteile kombinatorischer Ansätze herauszustellen, wurden anhand metastabiler Hartstoffschichten wie (Ti,Al)N bzw. (Ti,Al,Hf)N sowie Ge–Sb–Te-Schichten für wiederbeschreibbare optische Datenspeicher die Zusammenhänge zwischen Struktur, Zusammensetzung und gewünschten Materialeigenschaften, wie z. B. Oxidationsbeständigkeit, Härte oder Phasenumwandlungsgeschwindigkeit, untersucht.


Dr. R. Cremer Lehrstuhl für Theoretische Hüttenkunde, RWTH Aachen D-52056 Aachen, Germany Fax: +49 241 80 22 295

Dedicated to Professor Dr.-Ing. Dieter Neuschütz on the occasion of his 65th birthday


  1. The authors gratefully acknowledge the financial support granted by the Deutsche Forschungsgemeinschaft (DFG) within the Collaborative Research Center 289 and under contract no. Ne 351/22-1. In addition, the authors would like to thank the Institut für Halbleitertechnik II, RWTH Aachen, for the phase change measurements.

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Received: 2001-04-28
Published Online: 2022-01-13

© 2001 Carl Hanser Verlag, München

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