Home Technology Investigation of low k interfacial layer characteristics of LaAlO3 thin films grown on Si (100)
Article
Licensed
Unlicensed Requires Authentication

Investigation of low k interfacial layer characteristics of LaAlO3 thin films grown on Si (100)

  • Dong-Sheng Wang
Published/Copyright: June 1, 2014
Become an author with De Gruyter Brill

Abstract

Amorphous LaAlO3 thin films were deposited on bare Si substrates using RF-magnetron sputtering at room temperature. A post-annealing process was performed in O2 atmosphere at 650 °C for 30 min. The annealed films have a high-quality amorphous structure with faceted surface and uniform thickness. Smaller roughness of about 0.197 nm was observed. By analyzing the interfacial structure of the films, we confirmed that O2 annealing causes the formation of a low k (∼ 6.57) La and Al silicate phase with high-quality interface and surface. Unlike most previous studies, our results show the possibility of the formation of a relatively low k interfacial layer for LaAlO3 thin films during the thermal processing required by complementary metal oxide semiconductor applications.


*Correspondence address, Dr. Dong-Sheng Wang, Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016, People's Republic of China, Tel.: +86-25-52075693, Fax: +86-25-52113807, E-mail:

References

[1] A.I.Kingon, J.P.Maria, S.K.Streiffer: Nature406 (2000) 1032. 10.1038/35023243Search in Google Scholar PubMed

[2] B.E.Park, H.Ishiwara: Appl. Phys. Lett.82 (2003) 1197. 10.1063/1.1556966Search in Google Scholar

[3] P.Sivasubramani, M.J.Kim, B.E.Gnade, R.M.Wallace, L.F.Edge, D.G.Schlom, H.S.Craft, J.P.Maria: Appl. Phys. Lett.86 (2005) 201901. 10.1063/1.1928316Search in Google Scholar

[4] L.F.Edge, D.G.Schlom, P.Sivasubramani, R.M.Wallace, B.Hollander, J.Schubert: Appl. Phys. Lett.88 (2006) 112907. 10.1063/1.2182019Search in Google Scholar

[5] V.V.Afanas'ev, A.Stesmans, L.F.Edge, D.G.Schlom, T.Heeg, J.Schubert: Appl. Phys. Lett.88 (2006) 032104. 10.1063/1.2164432Search in Google Scholar

[6] A.D.Li, Q.Y.Shao, H.Q.Ling, J.B.Cheng, D.Wu, Z.G.Liu, N.B.Ming, C.Z.Wang, H.W.Zhou, B.Y.Nguyen: Appl. Phys. Lett.83 (2003) 3540. 10.1063/1.1584088Search in Google Scholar

[7] L.Yan, H.B.Lu, G.T.Tan, F.Chen, Y.L.Zhou, G.Z.Yang, W.Liu, Z.H.Chen: Appl. Phys. A77 (2003) 721. 10.1007/s00339-002-2069-1Search in Google Scholar

[8] X.B.Lu, X.Zhang, R.Huang, H.B.Lu, Z.H.Chen, W.F.Xiang, M.He, B.L.Cheng, H.W.Zhou, X.P.Wang, C.Z.Wang, B.Y.Nguyen: Appl. Phys. Lett.84 (2004) 2620. 10.1063/1.1646216Search in Google Scholar

[9] G.Vellianitis, G.Apostolopoulos, G.Mavrou, K.Argyropoulos, A.Dimoulas, J.C.Hooker, T.Conard, M.Butcher: Mater. Sci. Eng. B109 (2004) 85. 10.1016/j.mseb.2003.10.052Search in Google Scholar

[10] B.Mereu, G.Sarau, A.Dimoulas, G.Apostolopoulos, I.Pintilie, T.Botila, L.Pintilie, M.Alexe: Mater. Sci. Eng. B109 (2004) 94. 10.1016/j.mseb.2003.10.054Search in Google Scholar

[11] Y.Y.Mi, Z.Yu, S.J.Wang, P.C.Lim, Y.L.Foo, A.C.H.Huan, C.K.Ong: Appl. Phys. Lett.90 (2007) 181925. 10.1063/1.2731707Search in Google Scholar

[12] X.B.Lu, Z.G.Liu, G.H.Shi, H.Q.Ling, H.W.Zhou, X.P.Wang, B.Y.Nguyen: Appl. Phys. A78 (2004) 921. 10.1007/s00339-003-2090-zSearch in Google Scholar

[13] W.Siemons, G.Koster, H.Yamamoto, T.H.Geballe, D.H.A.Blank, M.R.Beasley: Phys. Rev. B76 (2007) 155111. 10.1103/PhysRevB.76.075126Search in Google Scholar

[14] M.Suzuki, T.Yamaguchi, N.Fukushima, M.Koyama: J. Appl. Phys.103 (2008) 034118. 10.1063/1.2835068Search in Google Scholar

[15] V.Edon, M.C.Hugon, B.Agius, C.Cohen, C.Cardinaud, C.Eypert: Thin Solid Films515 (2007) 7782. 10.1016/j.tsf.2007.03.179Search in Google Scholar

[16] L.Miotti, K.P.Bastos, C.Driemeier, V.Edon, M.C.Hugon, B.Agius, I.J.R.Baumvol: Appl. Phys. Lett.87 (2005) 022901. 10.1063/1.1989447Search in Google Scholar

[17] D.Eom, C.S.Hwang, H.J.Kim, M.H.Cho, K.B.Chung: Electrochem. Sol. Stat. Lett.11 (2008) 33. 10.1149/1.2916437Search in Google Scholar

[18] P.Sivasubramani, J.Kim, M.J.Kim, B.E.Gnade, R.M.Wallace: Appl. Phys. Lett.89 (2006) 152903. 10.1063/1.2361170Search in Google Scholar

[19] S.Geller, V.B.Bala: Acta Cryst.9 (1956) 1019. 10.1107/S0365110X56002965Search in Google Scholar

[20] E.A.Wood: Am. Mineralogist36 (1951) 768.Search in Google Scholar

[21] S.Koveshnikov, C.Adamo, V.Tokranov, M.Yakimov, R.Kambhampati, M.Warusawithana, D.G.Schlom, W.Tsai, S.Oktyabrsky: Appl. Phys. Lett.93 (2008) 012903. 10.1063/1.2952830Search in Google Scholar

[22] H.Watanabe, N.Ikarashi, F.Ito: Appl. Phys. Lett.83 (2003) 3546. 10.1063/1.1595132Search in Google Scholar

[23] R.Jiang, E.Xie, Z.Wang: Appl. Phys. Lett.89 (2006) 142907. 10.1063/1.2218832Search in Google Scholar

[24] K.Seo, P.C.Mclntyre, H.Kim, K.C.Saraswat: Appl. Phys. Lett.86 (2005) 082904. 10.1063/1.1866644Search in Google Scholar

Received: 2013-10-20
Accepted: 2014-01-13
Published Online: 2014-06-01
Published in Print: 2014-06-12

© 2014, Carl Hanser Verlag, München

Downloaded on 6.12.2025 from https://www.degruyterbrill.com/document/doi/10.3139/146.111064/html
Scroll to top button