Advanced high-k/metal gate stack progress and challenges – a materials and process integration perspective
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C. S. Park
, P. Lysaght , M. M. Hussain , J. Huang , G. Bersuker , P. Majhi , P. D. Kirsch , R. Jammy und H. H. Tseng
Abstract
Scaling of complementary metal oxide semiconductor devices is critical to enhancing performance and reducing the production cost of transistors. Conventional gate stack film systems consisting of a SiO2 dielectric layer between the Si substrate channel and a doped polycrystalline silicon (poly-Si) gate electrode exhibited excessively high gate current leakage when the physical thickness of this traditional dielectric was scaled to Tphys = ∼2 nm. The rate of scaling was initially preserved by incorporating nitrogen to form an SiOxNy insulator layer; however, this material soon experienced unacceptable levels of direct tunneling leakage current, which launched an industry-wide investigation of potential high dielectric constant (high-k) metal oxides as replacement materials for the SiO2 based gate dielectric layer. Thermal stability requirements for the introduction of high-k dielectric materials necessitated the simultaneous replacement of poly-Si with a metal gate electrode due to several performance factors including unscalable threshold voltage. Although high-k/metal gate thermal stability has been demonstrated, significant challenges remain to be resolved for future technology nodes. This paper reviews the progress and challenges associated with the introduction of high-k/metal gate transistors, including threshold voltage tuning and gate dielectric thickness scaling, from a materials and process integration perspective.
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© 2010, Carl Hanser Verlag, München
Artikel in diesem Heft
- Contents
- Contents
- Editorial
- Materials for Information Technology
- Feature
- Advanced high-k/metal gate stack progress and challenges – a materials and process integration perspective
- Spintronics in metallic superconductor/ferromagnet hybrid structures
- Graphene metrology and devices
- The role of defects in resistively switching chalcogenides
- Materials in optical data storage
- Scaling effects on microstructure and reliability for Cu interconnects
- Effects of e-beam curing on glass structureand mechanical properties of nanoporous organosilicate thin films
- Printing materials for electronic devices
- Basic
- Characterisation of lead – calcium alloys ageing in anisothermal conditions by calorimetric, resistance and hardness in-situ measurements
- Thermodynamic predictions of Mg – Al – Ca alloy compositions amenable to semi-solid forming
- Capillary equilibrium in a semi-solid Al – Cu slurry
- A comparative study of room-temperature creep in lead-free tin-based solder alloys
- Modeling creep in a thick composite cylinder subjected to internal and external pressures
- Applied
- The oxidation behaviour of the 9 % Cr steel P92in CO2- and H2O-rich gases relevant to oxyfuel environments
- Effect of thermal and mechanical treatments on the hot working response of Mg-3Sn-1Ca alloy
- Structure and mechanical properties of an AlCr6Fe2Ti1 alloy produced by rapid solidification powder metallurgy method
- Ni2O3-modified TiO2 – xNx as efficientvisible-light photocatalysts
- Dependence of optical, structural and electrical properties of ZnxCd1–xS thin films prepared by co-evaporation on the composition for x = 0 – 1
- DGM News
- DGM News
Artikel in diesem Heft
- Contents
- Contents
- Editorial
- Materials for Information Technology
- Feature
- Advanced high-k/metal gate stack progress and challenges – a materials and process integration perspective
- Spintronics in metallic superconductor/ferromagnet hybrid structures
- Graphene metrology and devices
- The role of defects in resistively switching chalcogenides
- Materials in optical data storage
- Scaling effects on microstructure and reliability for Cu interconnects
- Effects of e-beam curing on glass structureand mechanical properties of nanoporous organosilicate thin films
- Printing materials for electronic devices
- Basic
- Characterisation of lead – calcium alloys ageing in anisothermal conditions by calorimetric, resistance and hardness in-situ measurements
- Thermodynamic predictions of Mg – Al – Ca alloy compositions amenable to semi-solid forming
- Capillary equilibrium in a semi-solid Al – Cu slurry
- A comparative study of room-temperature creep in lead-free tin-based solder alloys
- Modeling creep in a thick composite cylinder subjected to internal and external pressures
- Applied
- The oxidation behaviour of the 9 % Cr steel P92in CO2- and H2O-rich gases relevant to oxyfuel environments
- Effect of thermal and mechanical treatments on the hot working response of Mg-3Sn-1Ca alloy
- Structure and mechanical properties of an AlCr6Fe2Ti1 alloy produced by rapid solidification powder metallurgy method
- Ni2O3-modified TiO2 – xNx as efficientvisible-light photocatalysts
- Dependence of optical, structural and electrical properties of ZnxCd1–xS thin films prepared by co-evaporation on the composition for x = 0 – 1
- DGM News
- DGM News