Startseite Advanced high-k/metal gate stack progress and challenges – a materials and process integration perspective
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Advanced high-k/metal gate stack progress and challenges – a materials and process integration perspective

  • C. S. Park , P. Lysaght , M. M. Hussain , J. Huang , G. Bersuker , P. Majhi , P. D. Kirsch , R. Jammy und H. H. Tseng
Veröffentlicht/Copyright: 15. Mai 2013
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Abstract

Scaling of complementary metal oxide semiconductor devices is critical to enhancing performance and reducing the production cost of transistors. Conventional gate stack film systems consisting of a SiO2 dielectric layer between the Si substrate channel and a doped polycrystalline silicon (poly-Si) gate electrode exhibited excessively high gate current leakage when the physical thickness of this traditional dielectric was scaled to Tphys = ∼2 nm. The rate of scaling was initially preserved by incorporating nitrogen to form an SiOxNy insulator layer; however, this material soon experienced unacceptable levels of direct tunneling leakage current, which launched an industry-wide investigation of potential high dielectric constant (high-k) metal oxides as replacement materials for the SiO2 based gate dielectric layer. Thermal stability requirements for the introduction of high-k dielectric materials necessitated the simultaneous replacement of poly-Si with a metal gate electrode due to several performance factors including unscalable threshold voltage. Although high-k/metal gate thermal stability has been demonstrated, significant challenges remain to be resolved for future technology nodes. This paper reviews the progress and challenges associated with the introduction of high-k/metal gate transistors, including threshold voltage tuning and gate dielectric thickness scaling, from a materials and process integration perspective.


Correspondence address, Chang Seo Park SEMATECH 2706 Montopolis Drive, Austin, TX 78741, U. S. A. Tel.: +1 512 356 3619 Fax: +1 512 356 7640 E-mail:

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Received: 2009-6-15
Accepted: 2009-12-1
Published Online: 2013-05-15
Published in Print: 2010-02-01

© 2010, Carl Hanser Verlag, München

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