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Effect of varying oxygen partial pressure on the properties of reactively evaporated zinc aluminate thin films

  • Saira Riaz and Shahzad Naseem
Published/Copyright: June 11, 2013
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Abstract

Thin films of zinc aluminate are prepared by reactive evaporation. The composition of these films is varied by changing the oxygen partial pressure and by post-deposition annealing. It is observed that there is wide variation in the band gap values (2.34 – 4.54 eV) depending on the oxygen partial pressure. Further, there is a strong dependence of band gap values on the post-deposition annealing conditions. One of the films exhibits spinel (AB2O4) structure, whereas the rest are amorphous. A resistivity value of as low as 3.6 × 10– 3 ohm-cm has been measured. The compositional studies, using mass spectrometry, reported in this paper point towards novel transparent conducting oxides.


* Correspondence address, Prof. Dr. Shahzad Naseem Centre of Excellence in Solid State Physics University of the Punjab, QAC, Lahore-54590, Pakistan Tel.: +92 42 584 7170 Fax: +92 42 923 1139 E-mail:

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Received: 2008-4-4
Accepted: 2008-10-25
Published Online: 2013-06-11
Published in Print: 2009-02-01

© 2009, Carl Hanser Verlag, München

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