Advanced high-k/metal gate stack progress and challenges – a materials and process integration perspective

References

[1] International Technology Roadmap for Semiconductors, 2008.Search in Google Scholar

[2] Y.-C.Yeo, P.Ranade, T.-J.King, C.Hu: Electron Device Letters.23 (2002) 342.10.1109/LED.2002.1004229Search in Google Scholar

[3] G.A.Brown, G.Smith, J.Saulters, K.Matthews, H.-C.Wen, H.AlShareef, P.Majhi, B.H.Lee: SISC (2004) 15.Search in Google Scholar

[4] H.C.Wen, R.Choi, G.A.Brown, T.Boscke, K.Matthews, H.R.Harris, K.Choi, H.N.Alshareef, H.Luan, G.Bersuker, P.Majhi, D.L.Kwong, B.H.Lee: Electron Device Letters.27 (2006) 598.10.1109/LED.2006.876324Search in Google Scholar

[5] H.Y.Yu, C.Ren, Y.-C.Yeo, J.F.Kang, X.P.Wang, H.H.H.Ma, M.-F.Li, D.S.H.Chan, D.-L.Kwong: Electron Device Letters.25 (2004) 337.10.1109/LED.2004.827643Search in Google Scholar

[6] R.Jha, J.Gurganos, Y.H.Kim, R.Choi, J.Lee, V.Misra: Electron Device Letter.25 (2004) 420.10.1109/LED.2004.829032Search in Google Scholar

[7] G.D.Wilk, M.L.Green, M.-Y.Ho, B.W.Busch, T.W.Sorsch, F.P.Klemens, B.Brijs, R. B.van Dover, A.Kornblit, T.Gustafsson, E.Garfunkel, S.Hillenius, D.Monroe, P.Kalavade, J.M.Hergenrother: VLSI Symp. Tech. Dig. (2002) 88.Search in Google Scholar

[8] S.Zafar, E.Cartier, E.P.Gusev: Applied Physics Letters.80 (2002) 2749.10.1063/1.1468915Search in Google Scholar

[9] H.-C.Wen, R.Choi, G.A.Brown, T.Böscke, K.Matthews, H.R.Harris, K.Choi, H.N.Alshareef, H.Luan, G.Bersuker, P.Majhi, D.-L.Kwong, B.H.Lee: Electron Device Letters.27 (2006).10.1109/LED.2006.886711Search in Google Scholar

[10] C.Hobbs, L.R.C.Fonseca, A.Knizhnik, V.Dhandapani, S.B.Samavedam, W.J.Taylor, J.M.Grant, L.G.Dip, D.H.Triyoso, R.I.Hegde, D.C.Gilmer, R.Garcia, D.Roan, M.L.Lovejoy, R.S.Rai, E.A.Hebert, H.-H.Tseng, S.G.H.Anderson, B.E.White, P.J.Tobin: Trans. Electron Devices.51 (2004) 971.10.1109/TED.2004.829513Search in Google Scholar

[11] J.H.Lee, K.Koh, N.I.Lee, M.H.Cho, Y.K.Kim, J.S.Jeon, K.H.Cho, H.S.Shin, M.H.Kim, K.Fugihara, H.K.Kang, J.T.Moon: IEDM Tech. Dig. (2000) 645.Search in Google Scholar

[12] H.J.Li, M.Gardner: Electron Device Letters.26 (2005) 441.10.1109/LED.2005.851093Search in Google Scholar

[13] M.Frank, V.Paruchuri, V.Narayanan, N.Bojarczuk, B.Linder, S.Zafar, E.Cartier, E.Gusev, P.Jamison, K.L.Lee, M.Steen, M.Copel, S.Cohen, K.Maitra, X.Wang, P.Kozlowski, J.Newbury, D.Medeiros, P.Olidiges, S.Guha, R.Jammy, M.Ieong, G.Shahidi: Proc. VLSI-TSA. (2006) 97.Search in Google Scholar

[14] B.Tavel, T.Skotnicki, G.Pares, N.Carriere, M.Rivoire, F.Leverd, C.Julien, J.Torres, R.Pantel: IEDM Tech. Dig. (2001) 825.Search in Google Scholar

[15] Z.Krivokapic, W.Maszara, K.Achutan, P.King, J.Gray, M.Sidorow, E.Zhao, J.Zhang, J.Chan, A.Marather, M.R.Lin: IEDM Tech. Dig. (2002) 271.Search in Google Scholar

[16] J.Kedzierski, D.Boyd, P.Ronsheim, S.Zafar, J.Newbury, J.Ott, C.Cabral, Jr., M.Ieong, W.Haensch: IEDM Tech. Dig. (2003) 315.Search in Google Scholar

[17] K.Takahashi, K.Manabe, T.Ikarashi, N.Ikarashi, T.Hase, T.Yoshihara, H.Watanabe, T.Tatsumi, Y.Mochizuki: IEDM Tech. Dig. (2004) 91.Search in Google Scholar

[18] T.Nabatame, M.Kadoshima, K.Iwamoto, N.Mise, S.Migita, M.Ohno, H.Ota, N.Yasuda, A.Ogawa, K.Tominaga, H.Satake, A.Toriumi: IEDM Tech. Dig. (2004) 83.Search in Google Scholar

[19] J.Kedzierski, D.Boyd, Y.Zbang, M.Steen, F.F.Jamin, J.Benedict, M.Ieong, W.Haensch: IEDM Tech. Dig. (2003) 441.Search in Google Scholar

[20] I.De, D.Johri, A.Srivastava, C.M.Osburn: Solid State Electron.44 (2000) 1077.10.1016/S0038-1101(99)00323-8Search in Google Scholar

[21] S.B.Samavedam, L.B.La, J.Smith, S.Dakshina-Murthy, E.Luckowski, J.Schaeffer, M.Zavala, R.Martin, V.Dhandapani, D.Triyoso, H.H.Tseng, P.J.Tobin, D.C.Gilmer, C.Hobbs, W.J.Taylor, J.M.Grant, R.I.Hegde, J.Mogab, C.Thomas, P.Abramowitz, M.Moosa, J.Conner, J.Jiang, V.Arunachalarn, M.Sadd, B.-Y.Nguyen, B.White: IEDM Tech. Dig. (2002) 433.Search in Google Scholar

[22] Z.B.Zhang, S.C.Song, C.Huffman1, J.Barnett, N.Moumen, H.Alshareef, P.Majhi, M.Hussain, M.S.Akbar, J.H.Sim, S.H.Bae, B.Sassman, B.H.Lee: VLSI Symp. Tech. Dig. (2005) 50.Search in Google Scholar

[23] S.Kubicek, T.Schram, V.Paraschiv, R.Vos, M.Demand, C.Adelmann, T.Witters, L.Nyns, L.-Å.Ragnarsson, H.Yu, A.Veloso, R.Singanamalla, T.Kauerauf, E.Rohr, S.Brus, C.Vrancken, V.S.Chang, R.Mitsuhashi, A.Akheyar, H.-J.Cho, J.C.Hooker, B.J.O'Sullivan, T.Chiarella, C.Kerner, A.Delabie, S.Van Elshocht, K.De Meyer, S.De Gendt, P.Absil, T.Hoffmann, S.Biesemans: IEDM Tech. Dig. (2007) 49.Search in Google Scholar

[24] T.Schram, S.Kubicek, E.Rohr, S.Brus, C.Vrancken, S.-Z.Chang, V.S.Chang, R.Mitsuhashi, Y.Okuno, A.Akheyar, H.-J.Cho, J.C.Hooker, V.Paraschiv, R.Vos, F.Sebai, M.Ercken, P.Kelkar, A.Delabie, C.Adelmann, T.Witters, L-A.Ragnarsson, C.Kerner, T.Chiarella, M.Aoulaiche, Moon-JuCho, T.Kauerauf, K.De Meyer, A.Lauwers, T.Hoffmann, P.P.Absil, S.Biesemans: VLSI Symp. Tech. Dig. (2008) 44.Search in Google Scholar

[25] X.Chen, S.Samavedam, V.Narayanan, K.Stein, C.Hobbs, C.Baiocco, W.Li, D.Jaeger, M.Zaleski, H.S.Yang, N.Kim, Y.Lee, D.Zhang, L.Kang, J.ChenH.Zhuang, A.Sheikh, J.Wallner, M.Aquilino, J.Han, Z.Jin, J.Li, G.Massey, S.Kalpat, R.Jha, N.Moumen, R.Mo, S.Kirshnan, X.Wang, M.Chudzik, M.Chowdhury, D.Nair, C.Reddy, Y.W.Teh, C.Kothandaraman, D.Coolbaugh, S.Pandey, D.Tekleab, A.Thean, M.Sherony, C.Lage, J.Sudijono, R.Lindsay, J.H.Ku, M.Khare, A.Steegen: VLSI Symp. Tech. Dig. (2008) 88.Search in Google Scholar

[26] P.Kirsch, M.A.Quevedo-Lopez, S.A.Krishnan, C.Krug, H.AlShareef, C.S.Park, R.Harris, N.Moumen, A.Neugroschel, G.Bersuker, B.H.Lee, J.G.Wang, G.Pant, B.E.Gnade, M.J.Kim: IEDM Tech. Dig. (2006) 639.Search in Google Scholar

[27] J.Huang, P.D.Kirsch, D.Heh, C.Y.Kang, G.Bersuker, M.Hussain, P.Majhi, P.Sivasubramani, D.C.Gilmer, N.Goel, M.A.Quevedo-Lopez, C.Young, C.S.Park, C.Park, P.Y.Hung, J.Price, H.R.Harris, B.H.Lee, H.-H.Tseng, R.Jammy: IEDM Tech. Dig. (2008) 45.Search in Google Scholar

[28] S.C.Song, Z.B.Zhang, M.M.Hussain, C.Huffman, J.Barnett, S.H.Bae, H.J.Li, P.Majhi, C.S.Park, B.S.Ju, H.K.Park, C.Y.Kang, R.Choi, P.Zeitzoff, H.H.Tseng, B.H.Lee, R.Jammy: VLSI Symp. Tech. Dig. (2006) 13.Search in Google Scholar

[29] H.-S.Jung, S.K.Han, H.Lim, Y.-S.Kim, M.J.Kim, M.Y.Yu, C.-K.Lee, M.S.Lee, Y.-S.You, Y.Chung, S.Kim, H.S.Baik, J.-H.Lee, N.-I.Lee, H.-K.Kang: VLSI Symp. Tech. Dig. (2006) 162.Search in Google Scholar

[30] H.AlShareef, M.Quevedo-Lopez, H.Wen, R.Harris, P.Kirsch, P.Majhi, B.Lee, R.Jammy, D.Lichtenwalner, J.Jur, A.Kingon: Applied Physics Letters.89 (2006) 232.10.1063/1.2396918Search in Google Scholar

[31] L.-Å.Ragnarsson, V.S.Chang, H.Y.Yu, H.-J.Cho, T.Conard, K.M.Yin, A.Delabie, J.Swerts, T.Schram, S.De Gendt, S.Biesemans: Electron Device Letters.28 (2007) 486.10.1109/LED.2007.896900Search in Google Scholar

[32] Y.Yamamoto, K.Kita, K.Kyuno, A.Toriumi: Proc. Ext. Abs. of SSDM. (2006) 212.Search in Google Scholar

[33] H.-C.Wen, S.C.Song, C.S.Park, C.Burhamn, G.Bersuker, O.Sharia, A.Demkov, B.S.Ju, M.A.Quevedo-Lopez, H.Niimi, K.Choi, H.B.Park, P.S.Lysaght, P.Majhi, B.H.Lee, R.Jammy: VLSI Symp. Tech. Dig. (2007) 160.Search in Google Scholar

[34] P.Sivasubramani, T.S.Böscke, J.Huang, C.D.Young, P.D.Kirsch, S.A.Krishnan, M.A.Quevedo-Lopez, S.Govindarajan, B.S.Ju, H.R.Harris, D.J.Lichtenwalner, J.S.Jur, A.I.Kingon, J.Kim, B.E.Gnade, R.M.Wallace, G.Bersuker, B.H.Lee, R.Jammy: VLSI Symp. Tech. Dig. (2007) 68.Search in Google Scholar

[35] O.Sharia, A.A.Demkov, G.Bersuker, B.H.Lee: Phys. Rev. B75 (2007) 035306.10.1103/PhysRevB.75.035306Search in Google Scholar

[36] B.H.Lee, J.Oh, H.H.Tseng, R.Jammy, H.Huff: Materials Today.9 (2006) 36.Search in Google Scholar

[37] S.C.Song, C.S.Park, J.Price, C.Burham, R.Choi, H.C.Wen, K.Choi, H.H.Tseng, B.H.Lee, R.Jammy: IEDM Tech. Dig. (2007) 337.Search in Google Scholar

[38] J.K.Schaeffer: Extended abstract of SSDM (2007) 8.Search in Google Scholar

[39] K.Akiyama, W.Wang, W.Mizubayashi, M.Ikeda, H.Ota, T.Nabatame, A.Toriumi: Symp. on VLSI Tech. (2007) 72.Search in Google Scholar

[40] G.Bersuker, C.S.Park, H.C.Wen, K.Choi, O.Sharia, A.Demkov: ESSDERC. (2008) 134.Search in Google Scholar

[41] G.Bersuker, C.S.Park, H.C.Wen, K.Choi, J.Price, P.Lysaght, O.Sharia, A.Demkov, J.Ryan, P.Lenahan: Unpublished (2009).Search in Google Scholar

[42] K.Choi, T.Lee, S.Kweon, C.D.Young, H.Harris, R.Choi, S.C.Song, B.H.Lee, R.Jammy: IEEE IRPS. (2007) 374.Search in Google Scholar

[43] C.S.Park, S.C.Song, C.Burham, H.B.Park, H.Niimi, B.S.Ju, J.Barnett, C.Y.Kang, P.Lysaght, G.Bersuker, R.Choi, H.K.Park, H.Hwang, B.H.Park, S.Kim, P.Kirsch, B.H.Lee, R.Jammy: Extended Abstracts of SSDM. (2007) 14.Search in Google Scholar

[44] J.Price, G.Bersuker, P.S.Lysaght: J. Vac. Sci. Technol.27 (2009) 310.10.1116/1.3021045Search in Google Scholar

[45] J.Price, P.S.Lysaght, S.C.Song, Hong-JyhLi, A.C.Diebold: Appl. Phys. Lett.91 (2007) 061925.10.1063/1.2769389Search in Google Scholar

[46] H.Takeuchi, D.Ha, T.-J.King: J. Vac. Sci. Technol. A22 (2004) 1337.10.1116/1.1705593Search in Google Scholar

[47] M.V.Fischetti, D.A.Neumayer, E.A.Cartier: J. Appl. Phys.90 (2001) 4587.10.1063/1.1405826Search in Google Scholar

[48] G.Bersuker, P.S.Lysaght, C.S.Park, J.Barnett, C.D.Young, P.D.Kirsch, R.Choi, B.H.Lee, B.Foran, K.van Benthem, S.J.Pennycook, P.M.Lenahan, J.T.Ryan: J. Appl. Phys.100 (2006) 094108.10.1063/1.2362905Search in Google Scholar

[49] X.Yu, C.Zhu, M.Yu, M.F.Li, A.Chin, C.H.Tung, D.Gui, D.-L.Kwong: IEDM Tech. Dig. (2005) 31.Search in Google Scholar

[50] T.Ma, S.A.Campbell, R.Smith, N.Hoilien, B.He, W.L.Gladfelter, C.Hobbs, D.Buchanan, C.Taylor, M.Gribelyuk, M.Tiner, M.Coppel, J.J.Lee: Trans. on Electron Devices.48 (2001) 2348.10.1109/16.954476Search in Google Scholar

[51] M.Li, Z.Zhang, S.A.Campbell, W.L.Gladfelter, M.P.Agustin, D.O.Klenov, S.Stemmer: J. Appl. Phys.98 (2005) 054506.10.1063/1.2039268Search in Google Scholar

[52] D.Triyoso: Proc. AVS-ALD. (2005).Search in Google Scholar

[53] N.Lu: Electron Device Letters.26 (2005) 298.10.1109/LED.2005.846893Search in Google Scholar

[54] S.J.Rhee, C.S.Kang, C.H.Choi, C.Y.Kang, S.Krishnan, M.Zhang, M.S.Akbar, J.C.Lee: IEDM Tech. Dig. (2004) 837.Search in Google Scholar

[55] P.Sivasubramani, P.D.Kirsch, J.Huang, C.Park, Y.N.Tan, D.C.Gilmer, C.Young, K.Freeman, M.M.Hussain, R.Harris, S.C.Song, D.Heh, R.Choi, P.Majhi, G.Bersuker, P.Lysaght, B.H.Lee, H.-H.Tseng, J.S.Jur, D.J.Lichtenwalner, A.I.Kingon, R.Jammy: IEDM Tech. Dig. (2007) 543.Search in Google Scholar

[56] M.Suzuki, M.Tomita, T.Yamaguchi, N.Fukushima: IEDM Tech. Dig. (2005) 445.Search in Google Scholar

[57] M.Takahashi, A.Ogawa, A.Hirano, Y.Kamimuta, Y.Watanabe, K.Iwamoto, S.Migita, N.Yasuda, H.Ota, T.Nabatame, A.Toriumi: IEDM Tech. Dig. (2007) 523.Search in Google Scholar

[58] J.Huang, D.Heh, P.Sivasubramani, P.D.Kirsch, G.Bersuker, D.C.Gilmer, M.A.Quevedo-Lopez, M.M.Hussain, P.Majhi, P.Lysaght, H.Park, N.Goel, C.Young, C.S.Park, C.Park, M.Cruz, V.Diaz, P.Y.Hung, J.Price, H.-H.Tseng, R.Jammy: VLSI Symp. Tech. Dig. (2009).Search in Google Scholar

[59] G.Bersuker, C.S.Park, J.Barnett, P.S.Lysaght, P.D.Kirsch, C.D.Young, R.Choi, B.H.Lee: J. Appl. Phys.100 (2006) 094108.10.1063/1.2362905Search in Google Scholar

[60] H.R.Harris, P.Kalra, P.M.Ajhi, M.Hussain, D.Kelly, J.Oh, D.Heh, C.Smith, J.Barnett, P.D.Kirsch, G.Gebara, J.Jur, D.Lichtenwalner, A.Lubow, T.P.Ma, G.Sung, S.Thompson, B.H.Lee, H.-H.Tseng, R.Jammy: VLSI Symp. Tech. Dig. (2007) 154.Search in Google Scholar