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The role of Si impurities in the transient dopant segregation and precipitation in yttrium-doped alumina

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Published/Copyright: June 11, 2013
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International Journal of Materials Research
From the journal International Journal of Materials Research Volume 101 Issue 1

Abstract

Y-doped alumina was sintered at 1500°C for 10 h under ultra-clean experimental conditions without experiencing any abnormal grain growth. The yttrium was fairly homogeneously distributed at the grain boundaries, with a mean value of Y = 5.5 at nm−2. The Y–Al–O precipitates in the clean, Y2O3-doped alumina specimen were the YAP (YAlO3) phase, whereas only the YAG (Y3Al5O12) phase was present in the Y2O3-doped alumina samples contaminated with SiO2. The excess concentrations of Y and Si atoms at the grain boundaries that, at the same time, provoke the formation of structurally complex YAG precipitates and abnormal grain growth were both estimated to be at 4–5 at nm−2. The compositions of the triple point pocket phases found in the region of the exaggeratedly grown alumina grains indicate the presence of alumino-silicate bulk liquids at the sintering temperature.

Keywords: Precipitation; Grain boundary segregation; Interfaces; Abnormal grain growth; Electron energy loss spectroscopy (EELS)
* Correspondence address Dr. Sašo Šturm, Jožef Stefan Institute, Department for Nanostructured Materials, Jamova cesta 39, SI-1000 Ljubljana, Slovenia. Tel.: +386 1477, 3418Fax: +386 1477 3221, E-mail:

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Received: 2009-5-7
Accepted: 2009-10-23
Published Online: 2013-06-11
Published in Print: 2010-01-01

© 2010, Carl Hanser Verlag, München

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https://doi.org/10.3139/146.110258
Keywords for this article
Precipitation; Grain boundary segregation; Interfaces; Abnormal grain growth; Electron energy loss spectroscopy (EELS)

Articles in the same Issue

  1. Contents
  2. Contents
  3. Editorial
  4. Editorial
  5. The 7th International Workshop on Interfaces: New Materials via Interfacial Control
  6. Basic
  7. First principles based predictions of the toughness of a metal/oxide interface
  8. The role of interfaces in the behavior of magnetic tunnel junction structures
  9. Applications of aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy to thin oxide films and interfaces
  10. Van der Waals-London dispersion interaction framework for experimentally realistic carbon nanotube systems
  11. Determination of grain boundary potentials in ceramics: Combining impedance spectroscopy and inline electron holography
  12. Grain boundary plane distributions in aluminas evolving by normal and abnormal grain growth and displaying different complexions
  13. Theoretical study on the structure and energetics of intergranular glassy film in Si3N4-SiO2 ceramics
  14. Inter-granular glassy phases in the low-CaO-doped HIPed Si3N4 ceramics: a review
  15. Applied
  16. Sintering of fully faceted crystalline particles
  17. Grain growth kinetics and segregation in yttria tetragonal zirconia polycrystals
  18. A new method to measure monoclinic depth profile in zirconia-based ceramics from X-ray diffraction data
  19. The role of Si impurities in the transient dopant segregation and precipitation in yttrium-doped alumina
  20. Using microfabricated devices to determine the fracture strength of materials
  21. Spark plasma sintering of self-doped alumina powders
  22. High density carbon materials obtained at relatively low temperature by spark plasma sintering of carbon nanofibers
  23. Application of new forming and sintering techniques to obtain hydroxyapatite and β-TCP nanostructured composites
  24. Silver-hydroxyapatite nanocomposites as bactericidal and fungicidal materials
  25. Cu-Ni-YSZ anodes for solid oxide fuel cell by mechanical alloying processing
  26. Rapid transient-liquid-phase bonding of Al2O3 with microdesigned Ni/Nb/Ni interlayers
  27. DGM News
  28. Personal
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