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Thermal relaxation of residual stresses in TiN films deposited by arc ion plating

Dedicated to Professor Eckard Macherauch on the occasion of the 80th anniversary of his birth
  • Tatsuya Matsue , Takao Hanabusa and Yasukazu Ikeuchi
Published/Copyright: May 31, 2013
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Abstract

The present study investigates crystal orientations and residual stresses in TiN films deposited by arc ion plating. TiN films approximately 2.0 μm thick were deposited on a steel substrate. With a bias voltage of 0 V, the TiN film exhibited strong {110} texture, whereas the dominant orientation of the film deposited at −100V was {111}. TiN films had very high compressive residual stresses: −8.6 GPa in the {110} textured film and −10.0 GPa in the {111} textured film. These residual stresses decreased with increasing annealing temperature and the reduction rate was greater for the {111} than for the {100} film. The behavior of residual stresses in the {111} and {110} textured layers of {111}/{110} textured double-layer film was identical to that for single-layer films.


* Correspondence address, Tatsuya Matsue, Department of Materials Engineering, Niihama College of Technology, 7-1, Yakumo, Niihama 792-8580, Japan, Tel.: +81897377800. E-mail:

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Received: 2006-4-20
Accepted: 2006-8-3
Published Online: 2013-05-31
Published in Print: 2006-12-01

© 2006, Carl Hanser Verlag, München

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