Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy
-
Nicoleta Doriana Banu
, Ionut Banu, Marios S. Katsiotis
, Anjana Tharalekshmy , Samuel Stephen , Jamie Whelan , Gisha Elizabeth Luckachan , Radu Vladea und Saeed M. Alhassan
Abstract
Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM.
Acknowledgements
The authors would like to acknowledge the financial support received from the Abu Dhabi Oil Refining Company (TAKREER) and from the Department of Chemical Engineering at The Petroleum Institute, Abu Dhabi, United Arab Emirates.
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