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Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol–gel methods

  • Ruthramurthy Balachandran , Ong Boon Hoong , Wong Hin Yong , Tan Kar Ban , Yow Ho Kwang and Lee Wai Keat
Published/Copyright: May 8, 2014
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Abstract

A Pt/BST/NiFe/Cu multilayered capacitor was fabricated incorporating a polycrystalline Ba0.5Sr0.5TiO3 (BST) film deposited using the pulsed laser deposition technique. Qualitative X-ray diffraction analysis confirmed a perovskite structure for the deposited BST dielectric films which were fired at various temperatures. No intermediate phase was discernable with a post-annealing temperature of 750 °C and highly crystallized thin film was obtained at a post-annealing temperature of 800 °C. The fabricated capacitor with a BST film thickness of 665 nm exhibited respectable electrical performance with a dielectric constant, k of 657, and a dielectric loss, tan δ = 0.0137 at room temperature at an applied frequency of 1 MHz. The recorded charge storage density and leakage current density were 4.6 μC cm−2 and 33 nA cm−2, respectively, with ± 5 V bias.


* Correspondence address, R. Balachandran, Faculty of Engineering, Multimedia University63100, Cyberjaya, SelangorMalaysia, Tel.: +60-3-83125427, Fax: +60-3-83183029, E-mail:

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Received: 2013-09-09
Accepted: 2013-11-26
Published Online: 2014-05-08
Published in Print: 2014-05-13

© 2014, Carl Hanser Verlag, München

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