Abstract
The electric activity of grain boundaries in donor-doped SrTiO3 bicrystals is studied using a combination of variable temperature impedance spectroscopy, current–voltage measurements and scanning probe microscopy. The dominant transport mechanism changes from thermionic emission to diffusive at about 220 K. The temperature dependence of interface capacitance is interpreted in terms of field-dependent dielectric constant in the vicinity of the interfaces. Simplified expressions for the temperature dependences of interface potential, charge and capacitance for a weakly nonlinear dielectric are derived to describe the experiment. The complex nature of these materials requires incorporation of such effects as nonlinear polarization and multiple simultaneous transport mechanisms.
Funding statement: The authors acknowledge the financial support from DoE grant DE-FG02-00ER45813-A000 and illuminating discussions with G. Duscher (NCSU and ORNL).
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© 2003 Carl Hanser Verlag, München
Artikel in diesem Heft
- Frontmatter
- Editorial
- Editorial
- Articles/Aufsätze
- The role of oxidation-induced cavities on the failure of the thermally grown oxide on binary β-NiAl alloys
- Phase stability of Y + Gd co-doped zirconia
- Mechanisms governing the distortion of alumina-forming alloys upon cyclic oxidation
- High-temperature oxidation of FeCrAl alloys: the effect of Mg incorporation into the alumina scale
- Nonlinear dielectric properties at oxide grain boundaries
- TEM observations of singular grain boundaries and their roughening transition in TiO2-excess BaTiO3
- Processing of dense MgO substrates for high-temperature superconductors
- Microwave-induced crystallization of polysilazane-derived silicon carbonitride
- Schottky barrier formation in liquid-phase-sintered silicon carbide
- SrTiO3: a model electroceramic
- Optical properties and electronic structure of oxidized and reduced single-crystal strontium titanate
- Spreading of liquid Ag and Ag–Mo alloys on molybdenum substrates
- Nanoalloying in mixed AgmAun nanowires
- Never ending saga of a simple boundary
- Comparison of interfacial chemistry at Cu/α-alumina and Cu/γ-alumina interfaces
- Microstructure of Cu2O/Si interfaces, made by epitaxial electrodeposition
- Metal/oxide interfaces and their reaction with hydrogen
- Amorphous films at metal/ceramic interfaces
- Some thoughts on source monochromation and the implications for electron energy loss spectroscopy
- Determination of the contrast transfer function by analysing diffractograms of thin amorphous foils
- Progress in the preparation of cross-sectional TEM specimens by ion-beam thinning
- Quantification of interfacial segregation by analytical electron microscopy
- Quantification of elemental segregation to lath and grain boundaries in low-alloy steel by STEM X-ray mapping combined with the ζ-factor method
- Microstructure of Al/Ti metallization layers
- Connectivity of CSL grain boundaries and the role of deviations from exact coincidence
- Effect of laser shock processing on the microstructure and mechanical properties of pure Cu
- Growth and microstructure of iron nitride layers and pore formation in ε-Fe3N
- Phase diagram of the Al–Cu–Fe quasicrystal-forming alloy system
- Notifications/Mitteilungen
- Personal/Personelles
- Gesellschaftsnachricht
- International Conferences
Artikel in diesem Heft
- Frontmatter
- Editorial
- Editorial
- Articles/Aufsätze
- The role of oxidation-induced cavities on the failure of the thermally grown oxide on binary β-NiAl alloys
- Phase stability of Y + Gd co-doped zirconia
- Mechanisms governing the distortion of alumina-forming alloys upon cyclic oxidation
- High-temperature oxidation of FeCrAl alloys: the effect of Mg incorporation into the alumina scale
- Nonlinear dielectric properties at oxide grain boundaries
- TEM observations of singular grain boundaries and their roughening transition in TiO2-excess BaTiO3
- Processing of dense MgO substrates for high-temperature superconductors
- Microwave-induced crystallization of polysilazane-derived silicon carbonitride
- Schottky barrier formation in liquid-phase-sintered silicon carbide
- SrTiO3: a model electroceramic
- Optical properties and electronic structure of oxidized and reduced single-crystal strontium titanate
- Spreading of liquid Ag and Ag–Mo alloys on molybdenum substrates
- Nanoalloying in mixed AgmAun nanowires
- Never ending saga of a simple boundary
- Comparison of interfacial chemistry at Cu/α-alumina and Cu/γ-alumina interfaces
- Microstructure of Cu2O/Si interfaces, made by epitaxial electrodeposition
- Metal/oxide interfaces and their reaction with hydrogen
- Amorphous films at metal/ceramic interfaces
- Some thoughts on source monochromation and the implications for electron energy loss spectroscopy
- Determination of the contrast transfer function by analysing diffractograms of thin amorphous foils
- Progress in the preparation of cross-sectional TEM specimens by ion-beam thinning
- Quantification of interfacial segregation by analytical electron microscopy
- Quantification of elemental segregation to lath and grain boundaries in low-alloy steel by STEM X-ray mapping combined with the ζ-factor method
- Microstructure of Al/Ti metallization layers
- Connectivity of CSL grain boundaries and the role of deviations from exact coincidence
- Effect of laser shock processing on the microstructure and mechanical properties of pure Cu
- Growth and microstructure of iron nitride layers and pore formation in ε-Fe3N
- Phase diagram of the Al–Cu–Fe quasicrystal-forming alloy system
- Notifications/Mitteilungen
- Personal/Personelles
- Gesellschaftsnachricht
- International Conferences