Comparison of interfacial chemistry at Cu/α-alumina and Cu/γ-alumina interfaces
-
Monika Backhaus-Ricoult
and
Marie-France Trichet
Abstract
Different alumina polymorphs (alpha, gamma and a transient phase) are formed in a copper matrix by oxidation of (Cu, Al) at 900 °C, at an oxygen activity of aO2= 10−13. Spatially resolved electron energy loss spectroscopy is used to determine bonding and electronic structure at the different interfaces. Compared to adjacent bulk phases, at the interfaces, the near edge fine structures are modified. Cu L2,3 shows an increased intensity compared to metallic copper and a chemical shift to higher energy. The size of both varies for the different interfaces, smallest chemical shift and highest L23 intensity are observed at {111}γ-alumina// {111}Cu interfaces, while larger chemical shift and smaller L2,3 intensities are found for γ-alumina/Cu interfaces in the order of {112̅0}α-alumina//{100}Cu, {0001}α-alumina// {001}Cu, {112̅3}α-alumina//Cu. In the interfacial O K edge, an additional pre-edge intensity is observed. For γ-alumina//Cu, it appears as a clear pre-peak, indicating hybridization with strong contributions of Cu 3d and O 2p states at the interface, while for α-alumina/Cu interfaces modifications in the interfacial O ELNES reveal mixed Cu–O–Al bonding with a strong covalent component. While interfacial Al L2,3 shows no chemical shift or new fine structural features compared to the bulk precipitate, a decrease in the aluminum coordination is revealed for the α-alumina/Cu interfaces by changes in the intensity distribution in the first peak, while for gamma interfaces no such observation is made. The observations show that interfacial bonding does not only vary with the thermodynamic parameters temperature and oxygen chemical potential, but also with the crystallographic characteristics of the interface.
Funding statement: This work made use of the UHV-STEM and microscopy facilities of the Cornell Center for Materials Research, supported through the National Science Foundation Materials Research Science and Engineering Centers programme. The authors are grateful for financial support provided by Corning Incorporated and wants to thank M. Thomas, CCMR - Cornell University, for assistance with the STEM analysis, A. Dezellus, CECM-CNRS for growth of single crystals.
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© 2003 Carl Hanser Verlag, München
Articles in the same Issue
- Frontmatter
- Editorial
- Editorial
- Articles/Aufsätze
- The role of oxidation-induced cavities on the failure of the thermally grown oxide on binary β-NiAl alloys
- Phase stability of Y + Gd co-doped zirconia
- Mechanisms governing the distortion of alumina-forming alloys upon cyclic oxidation
- High-temperature oxidation of FeCrAl alloys: the effect of Mg incorporation into the alumina scale
- Nonlinear dielectric properties at oxide grain boundaries
- TEM observations of singular grain boundaries and their roughening transition in TiO2-excess BaTiO3
- Processing of dense MgO substrates for high-temperature superconductors
- Microwave-induced crystallization of polysilazane-derived silicon carbonitride
- Schottky barrier formation in liquid-phase-sintered silicon carbide
- SrTiO3: a model electroceramic
- Optical properties and electronic structure of oxidized and reduced single-crystal strontium titanate
- Spreading of liquid Ag and Ag–Mo alloys on molybdenum substrates
- Nanoalloying in mixed AgmAun nanowires
- Never ending saga of a simple boundary
- Comparison of interfacial chemistry at Cu/α-alumina and Cu/γ-alumina interfaces
- Microstructure of Cu2O/Si interfaces, made by epitaxial electrodeposition
- Metal/oxide interfaces and their reaction with hydrogen
- Amorphous films at metal/ceramic interfaces
- Some thoughts on source monochromation and the implications for electron energy loss spectroscopy
- Determination of the contrast transfer function by analysing diffractograms of thin amorphous foils
- Progress in the preparation of cross-sectional TEM specimens by ion-beam thinning
- Quantification of interfacial segregation by analytical electron microscopy
- Quantification of elemental segregation to lath and grain boundaries in low-alloy steel by STEM X-ray mapping combined with the ζ-factor method
- Microstructure of Al/Ti metallization layers
- Connectivity of CSL grain boundaries and the role of deviations from exact coincidence
- Effect of laser shock processing on the microstructure and mechanical properties of pure Cu
- Growth and microstructure of iron nitride layers and pore formation in ε-Fe3N
- Phase diagram of the Al–Cu–Fe quasicrystal-forming alloy system
- Notifications/Mitteilungen
- Personal/Personelles
- Gesellschaftsnachricht
- International Conferences
Articles in the same Issue
- Frontmatter
- Editorial
- Editorial
- Articles/Aufsätze
- The role of oxidation-induced cavities on the failure of the thermally grown oxide on binary β-NiAl alloys
- Phase stability of Y + Gd co-doped zirconia
- Mechanisms governing the distortion of alumina-forming alloys upon cyclic oxidation
- High-temperature oxidation of FeCrAl alloys: the effect of Mg incorporation into the alumina scale
- Nonlinear dielectric properties at oxide grain boundaries
- TEM observations of singular grain boundaries and their roughening transition in TiO2-excess BaTiO3
- Processing of dense MgO substrates for high-temperature superconductors
- Microwave-induced crystallization of polysilazane-derived silicon carbonitride
- Schottky barrier formation in liquid-phase-sintered silicon carbide
- SrTiO3: a model electroceramic
- Optical properties and electronic structure of oxidized and reduced single-crystal strontium titanate
- Spreading of liquid Ag and Ag–Mo alloys on molybdenum substrates
- Nanoalloying in mixed AgmAun nanowires
- Never ending saga of a simple boundary
- Comparison of interfacial chemistry at Cu/α-alumina and Cu/γ-alumina interfaces
- Microstructure of Cu2O/Si interfaces, made by epitaxial electrodeposition
- Metal/oxide interfaces and their reaction with hydrogen
- Amorphous films at metal/ceramic interfaces
- Some thoughts on source monochromation and the implications for electron energy loss spectroscopy
- Determination of the contrast transfer function by analysing diffractograms of thin amorphous foils
- Progress in the preparation of cross-sectional TEM specimens by ion-beam thinning
- Quantification of interfacial segregation by analytical electron microscopy
- Quantification of elemental segregation to lath and grain boundaries in low-alloy steel by STEM X-ray mapping combined with the ζ-factor method
- Microstructure of Al/Ti metallization layers
- Connectivity of CSL grain boundaries and the role of deviations from exact coincidence
- Effect of laser shock processing on the microstructure and mechanical properties of pure Cu
- Growth and microstructure of iron nitride layers and pore formation in ε-Fe3N
- Phase diagram of the Al–Cu–Fe quasicrystal-forming alloy system
- Notifications/Mitteilungen
- Personal/Personelles
- Gesellschaftsnachricht
- International Conferences
