Current conduction mechanisms in thermal nitride and dry gate oxide grown on 4H-silicon carbide (SiC)
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Li Liu
und
Yin-Tang Yang
Abstract
Current conduction mechanisms of SiC metal-oxide-semiconductor (MOS) capacitors on n-type 4H-SiC with or without NO annealing have been investigated in this work. It has been revealed that Fowler-Nordheim (FN) tunneling is the dominating current conduction mechanism in high electrical fields, with barrier height of 2.67 and 2.54 eV respectively for samples with NO and without NO annealing. A higher barrier height for NO-annealed sample indicates the effect of N element on the SiC/SiO2 interface quality. In the intermediate oxide field, instead of trap-assisted tunneling (TAT), Poole-Frenkel (PF) emission play the key role in this region. A combination of C-V characteristics also show us the advantages of NO annealing on the SiC/SiO2 characteristics.
Funding
This research was financially supported by the National Science Foundation for younger scholar: Atomic Theory-Based Research on the Impact of Surface Roughness of SiC/SiO2 Interface on Ion-Implantation SiC MOSFET Characteristics (JJ0500142501); Key Project of National Nature Science Foundation of China: A study of reliability in wide band-gap power semiconductor devices (JJ0200122502).
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Artikel in diesem Heft
- Editorial: The importance of advanced oxidation processes in degrading persistent pollutants
- An overview on heterogeneous Fenton and photoFenton reactions using zerovalent iron materials
- Photooxidative Degradation of Pesticides in Water; Response Surface Modeling Approach
- The treatment of aniline in aqueous solutions by gamma irradiation
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- Molecular iodine/aqueous NH4OAc: a green reaction system for direct oxidative synthesis of nitriles from amines
- Catalytic Degradation of Safranin T in Aqueous Medium Using Non-conventional Processes
- Oxidation of 1, 2-dichlorobenzene on a commercial V2O5-WO3/nano-TiO2 catalyst: Effect of HCl addition
- Current conduction mechanisms in thermal nitride and dry gate oxide grown on 4H-silicon carbide (SiC)
- Effect of light and oxygen on repetitive bacterial inactivation on uniform, adhesive, robust and stable Cu-polyester surfaces
- Wet oxidation of an industrial high concentration pharmaceutical wastewater using hydrogen peroxide as an oxidant
- Oxidation characteristics of heavy crude oil in ignition process
- Comparative studies on the performance of porous Ti/Sno2-Sb2O3/Pbo2 enhanced by CNT and Bi Co-doped electrodes for methyl orange oxidation
- Application of photocatalytic paint for destruction of benzo[a]pyrene. Impact of air humidity
- Spray-drying synthesis and characterization of Li4Ti5O12 anode material for lithium ion batteries
- Kinetics analysis of photocatalytic degradation of Acid Orange 7 by Co/N/Er3+: Y3Al5O12/TiO2 films
- Reaction characteristics of oxygen generation from plate-like potassium superoxide within a confined space
- Electrochemical reduction of CO2 on a Cu2O/polyaniline /stainless steel based electrode
- Role of oxygen-containing functional surface groups of activated carbons on the elimination of 2-hydroxybenzothiazole from waters in A hybrid heterogeneous ozonation system
- The degradation efficiency and mechanism of meclofenamic acid in aqueous solution by UV irradiation
- Effect of electrode oxide film in micro arc oxidation on water treatment
- Photocurrent response and photocatalytic activity of Nd-doped TiO2 thin films prepared by sol-gel method
- Mathematical model involving chemical reaction and mass transfer for the ozonation of dimethyl phthalate in water in a bubble column reactor
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- Photocatalytic degradation of phenol on strontium titanate supported on HZSM-5
- Selective Fenton-like catalytic oxidation of acid orange II on inorganic heterogeneous molecular imprinted catalysts
- Decoloration of azo dye methyl orange by a novel electro-Fenton internal circulation batch reactor
