Startseite Pendeo-epitaxial Growth and Characterization of Thin Films of Gallium Nitride and Related Materials on SiC(0001) and Si(111) Substrates
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Pendeo-epitaxial Growth and Characterization of Thin Films of Gallium Nitride and Related Materials on SiC(0001) and Si(111) Substrates

  • Robert F. Davis EMAIL logo , Thomas Gehrke , Kevin J. Linthicum , Tsvetanka S. Zheleva , Pradeep Rajagopal , Chris A. Zorman und Mehran Mehregany
Veröffentlicht/Copyright: 22. Dezember 2021
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Abstract

Monocrystalline GaN and AlxGa1–xN films have been grown via the pendeo-epitaxy (PE) [1] technique with and without Si3N4 masks on GaN/AlN/6H–SiC(0001) and GaN(0001)/AlN(0001)/3C–SiC(111)/Si(111) substrates using organometallic vapor phase deposition. Scanning and transmission electron microscopies were used to evaluate the external microstructures and the distribution of dislocations, respectively. The dislocation densities in the PE grown films were reduced at least five orders of magnitude relative to the initial GaN seed layers. Tilting to 0.2° in the portion of the coalesced GaN epilayers grown over the silicon nitride masks was observed via X-ray diffraction. Neither tilting nor low angle boundaries were observed within areas of coalescence in the material grown on substrates without the masks.


R. F. Davis, T. Zheleva Department of Materials Science and Engineering North Carolina State University Box 79 07 Raleigh, North Carolina 27695, USA Fax: +1 91 9515 7724

Literature

1 Trademark of Nitronex Corporation, Raleigh, NC 27606.Suche in Google Scholar

2 Kapolnek, D.; Keller, S.; Vetury, R.; Underwood, R.; Kozodoy, P.; Denbaars, S.; Mishra, U.: Appl. Phys. Lett. 71 (1997) 1204.10.1063/1.119626Suche in Google Scholar

3 Koto, Y.; Kitamura, S.; Hiramatsu, K.; Sawaki, N.: J. Cryst. Growth 144 (1994) 133.10.1016/0022-0248(94)90448-0Suche in Google Scholar

4 Nam, O.; Bremser, M.; Ward, B.; Nemanich, R.; Davis, R.: Mat. Res. Soc. Symp. Proc. 449 (1997) 107.10.1557/PROC-449-107Suche in Google Scholar

5 Nam, O.; Bremser, M.; Ward, B.; Nemanich, R.; Davis, R.: Jpn. J. Appl. Phys., Part 1 36 (1997) L 532.10.1143/JJAP.36.L532Suche in Google Scholar

6 Sakai, S.; Sunakawa, H.; Usui, A.: Appl. Phys. Lett. 73 (1998) 481.10.1063/1.121907Suche in Google Scholar

7 Marchand, H.; Wu, X.; Ibbetson, J.; Fini, P.; Kozodoy, P.; Keller, S.; Speck, J.; Denbaars, S.; Mishra, U.: Appl. Phys. Lett. 73 (1998) 747.10.1063/1.121988Suche in Google Scholar

8 Zheleva, T.; Nam, O.; Bremser, M.; Davis, R.: Appl. Phys. Lett. 71 (1997) 2472.10.1063/1.120091Suche in Google Scholar

9 Nam, O.; Zheleva, T.; Bremser, M.; Nemanich, R.; Davis, R.: Appl. Phys. Lett. 71 (1997) 2638.10.1063/1.120164Suche in Google Scholar

10 Zhong, H.; Johnson, M.; McNulty, T.; Brown, J.; Cook Jr., J.; Schetzina, J.: Mater. Internet J., Nitride Semicond. Res. 3 (1998) 6.10.1557/S1092578300000788Suche in Google Scholar

11 Zheleva, T.; Smith, S.; Thomson, D.; Linthicum, K.; Gerhke, T.; Rajagopal, P.; Davis, R.: J. Electron. Mater. 28 (1999) L5.10.1007/s11664-999-0239-zSuche in Google Scholar

12 Linthicum, K.; Gerhke, T.; Thomson, D.; Carlson, E.; Rajagopal, P.; Smith, S.; Davis, R.: Appl. Phys Lett. 75 (1999) 196.10.1063/1.124317Suche in Google Scholar

13 Gerhke, T.; Linthicum, K.; Thomson, D.; Rajagopal, P.; Batchelor, D.; Davis, R.: MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G3.2.10.1557/S1092578300002337Suche in Google Scholar

14 Linthicum, K.; Gerhke, T.; Thomson, D.; Tracy, K.; Carlson, E.; Smith, S.; Zheleva, T.; Zorman, C.; Mehregany, M.; Davis, R.: MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G4.9.10.1557/S1092578300002921Suche in Google Scholar

15 Thomson, D.; Gerhke, T.; Linthicum, K.; Rajagopal, P.; Hartlieb, P.; Zheleva, T.; Davis, R.: MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G3.37.10.1557/S109257830000257XSuche in Google Scholar

16 Zheleva, T.; Thomson, D.; Smith, S.; Rajagopal, P.; Linthicum, K.; Gerhke, T.; Davis, R.: MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G3.36.10.1557/S1092578300002581Suche in Google Scholar

17 Gerhke, T.; Linthicum, K.; Rajagopal, P.; Preble, E.; Carlson, E.; Robin, B.; Davis, R.: in: C.H. Carter, Jr., R.P.Devaty, G.S. Rohrer (eds.), Silicon Carbide and Related Materials–1999, Trans Tech Publications, Zurich (2000) 1491–1494.Suche in Google Scholar

18 Gerhke, T.; Linthicum, K.; Preble, E.; Rajagopal, P.; RonningÇ.; Zorman, C.; Mehregany, M.; Davis, R.: J. Electron. Mater. 29 (2000) 306.10.1007/s11664-000-0068-6Suche in Google Scholar

19 Weeks, T.; Bremser, M.; Ailey, S.; Carlson, E.; Perry, W.; Davis, R.: Appl. Phys. Lett. 67 (1995) 401.10.1063/1.114642Suche in Google Scholar

20 Zorman, C.; Fleischman, A.; Dawa, A.; Mehregany, M.; Jacob, C.; Nishino, S.; Pirouz, P.: J. Appl. Phys. 78 (1995) 5136.10.1063/1.359745Suche in Google Scholar

Received: 2000-11-06
Published Online: 2021-12-22

© 2001 Carl Hanser Verlag, München

Artikel in diesem Heft

  1. Frontmatter
  2. Erratum
  3. Erratum
  4. Editorial
  5. In memoriam
  6. Aufsätze/Articles
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  8. Processing and Structure of Grain Boundaries in Strontium Titanate
  9. Stabilisation of MnZn Ferrites by the Re-oxidation of their Grain Boundaries
  10. Far-infrared Reflectivity Properties of BaTiO3 Ceramics
  11. Investigations on the Liquid Phase in Barium Titanate Ceramics with CuO Additives
  12. Chemical Engineering of Superconductive Rare-earth-Barium Cuprates: Melt Solidified Ceramics and Single Crystals
  13. Orthorhombic Titanium Aluminides: Phases, Phase Transformations and Microstructure Evolution
  14. Aspects of Sintering Additives for Processing and Microstructure Development of HIP-SSiC
  15. Investigation of Interlayer Phenomena in Ti/Pt Electrodes for Ferroelectric Thin Film Devices
  16. The Designing of Properties of Hydroxyapatite/Poly-l-lactide Composite Biomaterials by Hot Pressing
  17. Hydrolysis Assisted Solidification Process and its Use in Ceramic Wet Forming
  18. A Model for the Formation of Interdendritic Cavities from Pores Pre-existing in the Melt
  19. Pendeo-epitaxial Growth and Characterization of Thin Films of Gallium Nitride and Related Materials on SiC(0001) and Si(111) Substrates
  20. The Effect of Hydrogen Absorption and Desorption on Ta-doped SmFe Nitrides
  21. The Ternary System Fe–Nd–C
  22. Mechanical Properties of the Industrial HK40 Reforming Tubes Produced by an Improved Centrifugal Processing
  23. Texture of Hot Rolled and Annealed Binary Ti –Mn Alloys
  24. Finite-Element-Simulation des Faserverhalten metallischer Verbundwerkstoffe bei LCF-Beanspruchung
  25. Mitteilungen/Notifications
  26. Personal
  27. Book Reviews
  28. Tagungen/Conferences
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