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A fractal analysis for the microstructures of β-SiC films

  • Bin Li , Zhiyong Chen and Erzhou Ren
Published/Copyright: August 7, 2019

Abstract

Fractal theory is widely used to analyze the topography of surfaces; however, the relationship and characteristics of fractal dimension and microstructures of β-SiC films have not been reported. Using scanning electron microscopy and computer analysis, the microstructures of β-SiC films were evaluated; the films were prepared on AlN substrates by laser chemical vapor deposition using a diode laser and hydrido polycarbosilane as the precursor at different vacuum levels. The effect of vacuum level on the microstructure of β-SiC films was evaluated. The results show that the microstructures of β-SiC films exhibit the characteristics of fractals. Using the box counting method, the fractal dimensions of β-SiC films were calculated to be about 1.94–2.14, providing more fractal identification in evaluating the performance of films.


Correspondence address, Bin Li, School of Mechanical Engineering, Luoyang Institute of Science and Technology, Wangcheng Avenue 90, Luoyang 471023, Henan Province, P.R. China, Tel: +86 15937911896, Fax: +86 37965928209, E-mail:

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Received: 2019-01-09
Accepted: 2019-03-25
Published Online: 2019-08-07
Published in Print: 2019-08-12

© 2019, Carl Hanser Verlag, München

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