Startseite Cu2SnS3 absorber thin films prepared via successive ionic layer adsorption and reaction method
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Cu2SnS3 absorber thin films prepared via successive ionic layer adsorption and reaction method

  • Süleyman Kahraman , Samed Çetinkaya , Hacı Mustafa Çakmak , Hacı Ali Çetinkara und Hüsnü Salih Güder
Veröffentlicht/Copyright: 18. Oktober 2013
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Abstract

In this paper, we report the production of Cu2SnS3 thin films with high phase purity via successive ionic layer adsorption and reaction method on soda lime glass substrates. Structural, morphological, compositional, optical and electrical investigations were carried out. The X-ray diffraction patterns of the samples matched very well with the reference pattern and proved the polycrystalline nature of the films. As a secondary phase, one weak peak indicating covallite Cu2–xS phase was observed in the pattern of the sample deposited by using equimolar Cu and Sn. The surface morphologies of the films were found to be continuous and composed of homogeneously distributed large grains. From the reflectance and transmittance data, the optical absorption coefficient values of the films were found to be about 104 cm−1 and the films were found to be almost opaque in the wavelengths from 200 to 600 nm with a small reflectivity of about 10%. Band gap values of the films decreased from 1.45 to 1.35 eV with decreasing Cu content. Electrical characterization showed that the films were p-type semiconductor. Two different impurity levels for each film were found via resistivity-temperature characteristics.


* Correspondence address, PhD Süleyman Kahraman, Semiconductor Research Laboratory, Physics Department, Mustafa Kemal University, 31034, Hatay, Turkey, Tel.: +903262455845/1637, Fax: +903262455867, E-mail:

References

[1] S.Emin, S.P.Singh, L.Han, N.Satoh, A.Islam: Sol. Energy85 (2011) 1264. 10.1016/j.solener.2011.02.005Suche in Google Scholar

[2] S.Blöb, M.Jansen: Z. Naturforsch.58b (2002) 1075.Suche in Google Scholar

[3] X.Liang, Q.Cai, W.Xiang, Z.Chen, J.Zhong, Y.Wang, M.Shao, Z.Li: J. Mater. Sci. Technol. In press,. 10.1016/j.jmst.2012.12.011.Suche in Google Scholar

[4] M.Ristov, G.Sinadinovski, M.Mitreski, M.Ristova: Sol. Energy Mater. Sol. Cells69 (2001) 17. 10.1016/S0927-0248(00)00355-XSuche in Google Scholar

[5] Z.Su, K.Sun, Z.Han, F.Liu, Y.Lai, J.Li, Y.Liu: J. Mater. Chem.22 (2012) 16346. 10.1039/c1jm13338aSuche in Google Scholar

[6] D.M.Berg, R.Djemour, L.Gütay, G.Zoppi, S.Siebentritt, P.J.Dale: Thin Solid Films520 (2012) 6291. 10.1016/j.tsf.2012.05.085Suche in Google Scholar

[7] D.Avellaneda, M.T.S.Nair, P.K.Nai: J. Electrochem. Soc.157 (2010) D346. 10.1149/1.3384660Suche in Google Scholar

[8] T.A.Kuku, O.A.Fakolujo: Sol. Energy Mater.16 (1987) 199. 10.1016/0165-1633(87)90019-0Suche in Google Scholar

[9] M.Bouaziz, M.Amlouk, S.Belgacem: Thin Solid Films517 (2009) 2527. 10.1016/j.tsf.2008.11.039Suche in Google Scholar

[10] D.Wu, C.R.Knowles, L.L.Y.Chang: Miner. Mag.50 (1986) 323. 10.1180/minmag.1986.050.356.20Suche in Google Scholar

[11] X.Chen, H.Wada, A.Sato, M.Mieno: J. Solid State Chem.139 (1998) 144. 10.1006/jssc.1998.7822Suche in Google Scholar

[12] M.OnodaX.-A.Chen, A.Sato, H.Wada: Mater. Res. Bull.35 (2000) 1563. 10.1016/S0025-5408(00)00347-0Suche in Google Scholar

[13] M.Bouaziz, J.Ouerfelli, S.Srivastava, J.Bernde, M.Amlouk: Vacuum85 (2011) 783. 10.1016/j.vacuum.2010.10.001Suche in Google Scholar

[14] P.Fernandes, P.Salome, A.Cunha: J. Phys. D: Appl. Phys.43 (2010) 215403. 10.1088/0022-3727/43/21/215403Suche in Google Scholar

[15] H.Guan, H.Shen, C.Gao, X.He: J. Mater. Sci-Mater. El.10.1007/s10854-012-0960-x).Suche in Google Scholar

[16] P.A.Fernandes, P.M.P.Salome, A.F.Cunha: J. Alloy. Compd.509 (2011) 7600. 10.1016/j.jallcom.2011.04.097Suche in Google Scholar

[17] Q.Chen, X.Dou, Y.Ni, S.Cheng, S.Zhuang: J. Colloid Interface Sci.376 (2012) 327. 10.1016/j.jcis.2012.03.015Suche in Google Scholar PubMed

[18] B.Li, Y.Xie, J.Huang, Y.Qian: J. Solid State Chem.153 (2000) 170. 10.1006/jssc.2000.8772Suche in Google Scholar

[19] A.Amlouk, K.Boubaker, M.Amlouk: Vacuum85 (2010) 60. 10.1016/j.vacuum.2010.04.002Suche in Google Scholar

[20] C.X.Li, J.Guo, D.Y.Jiang, Q.Li: Adv. Mater. Res.624 (2012) 59. 10.4028/www.scientific.net/AMR.624.1Suche in Google Scholar

[21] I.Oja, A.Belaidi, L.Dloczik, M.-Ch.Lux-Steiner, T.Dittrich: Semicond. Sci. Technol.21 (2006) 520. 10.1088/0268-1242/21/4/018Suche in Google Scholar

[22] H.Katagiri, N.Sasaguchi, S.Hando, S.Hoshino, J.Ohashi, T.Yokota: Sol. Energy Mater. Sol. Cells49 (1997) 407. 10.1016/S0927-0248(97)00119-0Suche in Google Scholar

[23] T.Kobayashi, K.Jimbo, K.Tsuchida, S.Shinoda, T.Oyanagi, H.Katagiri: Jpn. J. Appl. Phys.44 (2005) 783. 10.1143/JJAP.44.1027Suche in Google Scholar

[24] H.Katagiri: Thin Solid Films480–481 (2005) 426.10.1016/j.tsf.2004.11.024Suche in Google Scholar

[25] H.Katagiri, K.Jimbo, S.Yamada, T.Kamimura, W.S.Maw, T.Fukano, T.Ito, T.Motohiro: Appl. Phys. Exp.1 (2008) 0412011. 10.1143/APEX.1.041201Suche in Google Scholar

[26] H.Katagiri, K.Jimbo, W.S.Maw, K.Oishi, M.Yamazaki, H.Araki, A.Takeuchi: Thin Solid Films517 (2009) 2455. 10.1016/j.tsf.2008.11.002Suche in Google Scholar

[27] S.Chen, X.G.Gong, A.Walsh, S.Wei: Appl. Phys. Lett.96 (2010) 021902. 10.1063/1.3275796Suche in Google Scholar

[28] G.Knuyt, C.Quaeyhaegens, J.D.Haen, L.M.Stals: Phys. Status Solidi B195 (1996) 179. 10.1002/pssb.2221950121Suche in Google Scholar

[29] H.P.Klug, L.Alexander: X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials, John Wiley & Sons, New York (1974).Suche in Google Scholar

[30] A.Suresh, K.Chatterjee, V.K.Sharma, S.Ganguly, KarguptaK., D.Banerjee: J. Elect. Mater.38 (2009) 449. 10.1007/s11664-008-0635-9Suche in Google Scholar

[31] J.Tauc: Mater. Res. Bull.5 (1970) 721. 10.1016/0025-5408(70)90112-1Suche in Google Scholar

[32] S.Sönmezoğlu, A.Arslan, T.Serin, N.Serin: Phys. Scr.84 (2011) 065602. 10.1088/0031-8949/84/06/065602Suche in Google Scholar

[33] M.Bouaziz, M.Amlouk, S.Belgacem: Thin Solid Films517 (2009) 2527. 10.1016/j.tsf.2008.11.039Suche in Google Scholar

[34] M.Onoda, X.-A.Chen, A.Sato, H.Wada: Mater. Res. Bull35 (2000) 1563. 10.1016/S0025-5408(00)00347-0Suche in Google Scholar

[35] D.M.Berg, R.Djemour, L.Gütay, S.Siebentritt, P.J.Dale, X.Fontane, V.Izquierdo-Roca, A.Perez-Rodriguez: Appl. Phys. Lett.100 (2012) 192103. 10.1063/1.4712623Suche in Google Scholar

[36] A.C.Rastogi, S.Salkalachen: Thin Solid Films97 (1982) 191. 10.1016/0040-6090(82)90228-0Suche in Google Scholar

[37] K.Seeger: Semiconductor Physics, Springer, Berlin/Wien/New York (1973).10.1007/978-3-7091-4111-3Suche in Google Scholar

[38] B.Pejova, A.Tanusevski, I.Grozdanov: J. Solid State Chem.178 (2005) 1786. 10.1016/j.jssc.2005.03.017Suche in Google Scholar

Received: 2013-2-3
Accepted: 2013-5-9
Published Online: 2013-10-18
Published in Print: 2013-10-10

© 2013, Carl Hanser Verlag, München

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