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Influence of sputtering gas pressure on properties of transparent conducting Si-doped zinc oxide films

  • Hua Qin , Hunfa Liu and Chengxin Lei
Published/Copyright: October 18, 2013
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International Journal of Materials Research
From the journal International Journal of Materials Research Volume 104 Issue 10

Abstract

Si-doped zinc oxide (SZO, Si 3%) thin films were deposited on glass substrates by means of direct current magnetron sputtering under different pressures. The influence of sputtering pressure on structure, morphology, optical and electrical properties of SZO thin films was investigated. The results reveal that the sputtering pressures have a significant impact on the growth rate, crystal quality and electrical properties of the films, but have little impact on the optical properties of the films. SZO thin film samples grown on glasses are polycrystalline with a hexagonal wurtzite structure and have a preferred orientation along the c-axis perpendicular to the substrate. When the sputtering pressure increases from 2 to 8 Pa, the film surface becomes compact and smooth, the degree of crystallization of the films increases, and the resistivity of films decreases. However, when the sputtering pressure continues to increase from 8 to 10 Pa, the degree of crystallization of the films decreases, the grain size decreases, and the resistivity of the films increases. SZO(3%) thin film deposited at a sputtering pressure of 8 Pa shows the largest carrier concentration, the largest mobility, the lowest resistivity of 3.0 × 10−4 Ω cm and a high overall transmission of 93.3% in the visible range.

Keywords:: Transparent conducting oxide; Silicon doped zinc oxide; Sputtering pressure; Optical and electrical properties
* Correspondence address, Hua Qin, Doctor of engineering, 12 Zhangzhou Road, Zhangdian District, Zibo 255049, China, Tel.: +86 0533 2786289, Fax: +86 0533 2786289, E-mail:

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Received: 2012-9-22
Accepted: 2013-3-26
Published Online: 2013-10-18
Published in Print: 2013-10-10

© 2013, Carl Hanser Verlag, München

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https://doi.org/10.3139/146.110949
Keywords for this article
Transparent conducting oxide; Silicon doped zinc oxide; Sputtering pressure; Optical and electrical properties

Articles in the same Issue

  1. Contents
  2. Contents
  3. Original Contributions
  4. Martensite–austenite transformation kinetics of high Cr ferritic heat-resistant steel
  5. Ageing texture of hot rolled and solution treated Ti–Nb alloys
  6. Artificial aging of thixocast ZA27 alloy and particulate ZA27/SiCp composites
  7. Low cycle fatigue behavior under asymmetric loading of two AZ31B magnesium alloys with different microstructures and textures
  8. Mechanical properties of aluminum extruded via the KOBO method with direct and lateral outflow
  9. Hot compression deformation of an Mg–2.54Nd–0.26Zn–0.32Zr alloy
  10. Evaluation of the sliding performance of polyamide, poly-oxy-methylene and their composites
  11. Corrosion behaviour of AISI 204Cu and AISI 304 stainless steels in simulated pore solution
  12. Comparing the corrosion behavior of nanograined and coarse-grained interstitial free steels
  13. Electrochemical investigation of the effect of different laser surface treatments on Hastelloy G alloy
  14. Influence of sputtering gas pressure on properties of transparent conducting Si-doped zinc oxide films
  15. Cu2SnS3 absorber thin films prepared via successive ionic layer adsorption and reaction method
  16. Nano preparation of Dy3+ substituted ceria via urea-formaldehyde gel combustion route
  17. Short Communications
  18. Preparation of ZrB2-based nanocomposites with limited grain growth by means of low-temperature hot-pressing using Cu additive
  19. Combustion synthesis of Ti2SC
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  21. Prof. Dr. Tomaž Kosmač
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