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A technique for diameter enlargement in SiC crystal growth

  • Shenghuang Lin , Zhiming Chen , Dong Jiang , Peng Liang , Jun Wan , Bo Liu , Huajie Xie and Xianfeng Feng
Published/Copyright: June 11, 2013
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International Journal of Materials Research
From the journal International Journal of Materials Research Volume 101 Issue 12

Abstract

The availability of large high-quality silicon carbide (SiC) single crystals is a key issue in the development of the full potential of SiC-based device technology. This paper mainly discusses SiC crystal growth in the graphite crucible with several geometrical structures by using the physical vapor transport method to investigate the influence of graphite crucible structures on SiC crystal diameter enlargement. Metallographic microscopy and X-ray diffraction are applied to the obtained cross-sectional slice of SiC ingot. In a growth run with a crucible structure of cylinder platform seed-holder and additional cone-shaped inner furnace close to the seed crystal, the SiC crystal diameter increases only 4–5 mm and the growth front exhibits a smooth segment of spherical shape; but the diameter of SiC single crystal decreases when the inside diameter of the crucible is close to that of the seed crystal and the angle α between the cone-shaped platform and cylinder platform is larger than 20°. When using the crucible with a cone-shaped platform seed-holder and cone-shaped inner wall, the SiC crystal growth will proceed along the axial direction as well as the radial direction, and the diameter can be enlarged by about 12 mm in a single growth run.

Keywords: SiC; Diameter; Diameter enlargement; Platform; PVT
* Correspondence address, Prof. Zhiming Chen, Xi'an University of Technology, Department of Electronic Engineering, 5#, South Jinhua Road, China. Tel./Fax: +86 29 8231 2136

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Received: 2009-9-7
Accepted: 2010-10-4
Published Online: 2013-06-11
Published in Print: 2010-12-01

© 2010, Carl Hanser Verlag, München

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https://doi.org/10.3139/146.110432
Keywords for this article
SiC; Diameter; Diameter enlargement; Platform; PVT

Articles in the same Issue

  1. Basic
  2. High-temperature in-situ microscopy during stress-induced phase transformations in Co49Ni21Ga30 shape memory alloy single crystals
  3. Contents
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  8. Atomic mobilities and diffusivities in the fcc, L12 and B2 phases of the Ni-Al system
  9. Experimental investigation of the Zn–Fe–V system at 450°C
  10. Time resolved X-ray imaging of eutectic cellular patterns evolving during solidification of ternary Al–Cu–Ag alloys
  11. Reassessment of the Mg–Ge binary system using CALPHAD supported by first-principles calculation
  12. A quantitative modeling of the unloading behavior of metals during a tensile test
  13. A technique for diameter enlargement in SiC crystal growth
  14. Applied
  15. Thermal and chemical stability of Cr2AlC in contact with α-Al2O3 and NiAl
  16. Microstructure and mechanical properties of Zn25Al3Cu based composites with large Al2O3 particles at room and elevated temperatures
  17. An investigation on Incoloy800-SS304 clad plate by explosive welding
  18. Effect of grain boundary precipitates on vibration damping of FeüCrüMgüAl/Si alloy
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