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Piezoelectrical Properties of Plasma Layers Zn-Bi-O

  • Daniel Dopierała und Jan Ziaja EMAIL logo
Veröffentlicht/Copyright: 30. November 2016
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Abstract

The paper presents specific piezoelectric properties of thin layers of zinc oxide modified with bismuth (Zn-Bi-O). The purpose of the presented work was to find the relation between the technological parameters of receiving thin films (density power deposited on target, reactive gas pressure, distance from the substrate to the target) and the piezoelectric properties d33. The thin layers of Zn-Bi-O were obtained in a reactive process of magnetron sputtering of the metallic target Zn-Bi. As a result of the technological processes involved in research, a coefficient value d33 has been received in the ranges of 1-10 pC/N. The next step is to find the most suitable technological parameters in order to obtain optimum piezoelectric properties of the thin films Zn-Bi-O.

Received: 2006-1-30
Revised: 2006-2-20
Accepted: 2006-3-8
Published Online: 2016-11-30
Published in Print: 2006-7-1

© 2016 by Walter de Gruyter Berlin/Boston

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Heruntergeladen am 15.9.2025 von https://www.degruyterbrill.com/document/doi/10.1515/jaots-2006-0221/html
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