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Fabrication and characterization of reduced graphene oxide on MoS2 film for IR detectors

  • Anurag Gartia , Diana Pradhan , Kiran K. Sahoo , Sameer R. Biswal , Somesh Sabat and Jyoti P. Kar ORCID logo EMAIL logo
Published/Copyright: February 17, 2025
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Abstract

Graphene has gained tremendous attention in the field of photonics and electronics because of its numerous outstanding properties including zero bandgap, exceptionally high crystal and electronic quality, high mechanical strength, and electrical conductivity. At the cutting edge of technology, graphene oxide–molybdenum disulphide hybrid structures have drawn tremendous attention for the development of high efficiency infrared (IR) detectors, where MoS2 film is used for generation of photoelectrons, and reduced graphene oxide is used to enhance the carrier mobility. The production of graphene oxide (GO) in this work is done using a modified version of Hummer’s process, in which GO is thermally reduced for an hour at 350 °C to produce reduced graphene oxide (rGO). The appearance of X-ray diffraction peak, corresponding to (001) and (002) for GO and rGO, respectively confirms the crystalline nature of the materials. The Raman spectra of GO and rGO exhibit distinctive peaks located at 1,358 cm−1 and 1,597 cm−1, which correspond to the D bands and G bands, respectively. The layered structure of rGO is examined by scanning electron microscopy. On the other hand, MoS2 film was grown by the sulphonation of sputtered Mo film on silicon substrate. The characteristic peak of MoS2, corresponding to (002) plane, is observed around 2θ = 14.1° whereas Raman characteristic bands are observed at 386 cm−1 (E12g) and 408 cm−1 (A1g). Afterwards, rGO layer was deposited on MoS2 thin film. The highest current On/Off ratio of 45.8 was found under illumination of 1,060 nm IR source. Under illumination at a 1,060 nm IR wavelength, the device demonstrates a responsivity of 0.21 A W−1 and detectivity of 1.83 × 109 Jones.


Corresponding author: Jyoti P. Kar, Department of Physics and Astronomy, National Institute of Technology, Rourkela, 769008, India; and Centre for Nanomaterials, National Institute of Technology, Rourkela, 769008, India, E-mail:

  1. Research ethics: Not applicable.

  2. Informed consent: Not applicable.

  3. Author contributions: Anurag Gartia: Research Methodology, Conceptualization, Sample Preparation, Experiment, Data Processing and Analysis, Writing and Preparation of Original Draft Diana Pradhan: Supervision, Research Methodology, Data Processing and Analysis, Conceptualization, Writing-reviewing and Editing. Kiran Kumar Sahoo: Research Methodology, Data Processing and Analysis, Writing-reviewing and Editing. Sameer Ranjan Biswal: Writing-reviewing and Editing. Somesh Sabat: Writing-reviewing and Editing. Jyoti Prakash Kar: Supervision, Research Methodology, Data Processing and Analysis, Conceptualization, Writing-reviewing and Editing.

  4. Use of Large Language Models, AI and Machine Learning Tools: None declared.

  5. Conflict of interest: The authors state no conflict of interest.

  6. Research funding: This work was supported by science and engineering research board (SERB), New Delhi, India, project (CRG/2022/007034). The XRD (Rigaku, Ultima-IV) characterization facility is supported by FIST-DST project (SR/FIST/PSI-156/2010, Dated: 28/12/2010).

  7. Data availability: The data sets used or analyzed in this study available from corresponding author on reasonable request.

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Received: 2024-02-16
Accepted: 2024-12-09
Published Online: 2025-02-17
Published in Print: 2025-02-25

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