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Cross-sectional high-resolution transmission electron microscopy at Mo/Si multilayer stacks

  • Thomas Höche
Published/Copyright: February 12, 2022
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Abstract

Using a Mo/Si multilayer stack, capabilities and limits of high-resolution transmission electron microscopy with respect to thin film analysis are pointed out. Image processing is shown to provide non-subjective criteria for the determination of layer thicknesses. In comparison to measurements by X-ray reflectometry, an integrating method capable of determining multilayer periodicities, preparation and observation artefacts in transmission electron microscopy is discussed. Special emphasis is placed on cleavage as a powerful method for TEM sample preparation, its advantages and disadvantages.


Dedicated to Professor Dr. Knut Urban on the occasion of his 65th birthday



Dr. Thomas Höche Leibniz-Institut für Oberflächenmodifizierung e.V. Permoser Straße 15, D-04318 Leipzig, Germany Tel.: +49 341 235 3310 Fax: +49 341 235 2313

Funding statement: This study was initiated by A. Köhler (now with: von Ardenne Anlagentechnik GmbH). I wish to cordially thank J. W. Gerlach (IOM Leipzig) for administering reflectometry measurements, fruitful discussions, and helpful suggestions. The assistance of R. Scholz (Max Planck Institute for Microstructure Physics in Halle) in sample cleaving proved particularly valuable and is gratefully acknowledged. G. Otto (IOT GmbH), B. Ocker (Singulus Technologies AG), and M. Scherer (Leybold Optics) provided the multilayer sample and access to the high-resolution TEM facilities at the Max Planck Institute for Microstructure Physics in Halle was bestowed by U. M. Gösele

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Received: 2006-01-12
Accepted: 2006-04-06
Published Online: 2022-02-12

© 2006 Carl Hanser Verlag, München

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