Home Development of element technologies for EUVL
Article
Licensed
Unlicensed Requires Authentication

Development of element technologies for EUVL

  • Hiroo Kinoshita EMAIL logo , Takeo Watanabe and Tetsuo Harada
Published/Copyright: July 1, 2015
Become an author with De Gruyter Brill
Author Information
Advanced Optical Technologies
From the journal Advanced Optical Technologies Volume 4 Issue 4

Abstract

Thirty years have passed since the first report on extreme ultraviolet lithography (EUVL) was presented at the annual meeting of the Japanese Society of Applied Physics in 1986. This technology is now in the manufacturing development stage. The high-volume manufacturing of dynamic-random-access-memory (DRAM) chips with a line width of 15 nm is expected in 2016. However, there are critical development issues that remain: generating a stand-alone EUV source with a higher power and producing a mask inspection tool for obtaining zero-defect masks. The Center for EUVL at the University of Hyogo was established in 2010. At present, it utilizes various types of equipment, such as an EUV mask defect inspection tool, an interference-lithography system, a device for measuring the thickness of carbon contamination film deposited by resist outgassing, and reflectivity measurement systems.

Keywords: defect; EUVL; exposure system; interference lithography; mask; phase defect; reflectivity; resist
Corresponding author: Hiroo Kinoshita, Center for Extreme Ultraviolet Lithography, University of Hyogo, Ako-gun, Hyogo, Japan, e-mail:

References

[1] H. Kinoshita, R. Kaneko, K. Takei, N. Takeuchi and S. Ishihara, JSAP, 28-ZF-15 (1986) [in Japanese].Search in Google Scholar

[2] H. Kinoshita, K. Kithara, Y. Ishii and Y. Torii, J. Vac. Sci. Technol. B 7, 1648 (1989).10.1116/1.584507Search in Google Scholar

[3] H. Takenaka, Y. Ishiii, H. Kinoshita and K. Kurihara, Proc. SPIE. 1345, 213 (1990).Search in Google Scholar

[4] H. Kinoshita, K. Kurihara and H. Takenaka, Jpn. J. Appl. Phys. 30, 3048 (1991).10.1143/JJAP.30.3048Search in Google Scholar

[5] K. Kurihara, H. Kinoshita, T. Mizota, T. Haga and Y. Torii, J. Vac. Sci. Technol. B 9, 3189 (1991).10.1116/1.585314Search in Google Scholar

[6] H. Kinoshita, K. Kurihara, T. Mizota, T. Haga, H. Takenaka, et al., Appl. Opt. 32, 7079–7083 (1993).10.1364/AO.32.007079Search in Google Scholar

[7] T. Haga and H. Kinoshita, J. Vac. Sci. Technol. B 13, 2914 (1995).10.1116/1.588278Search in Google Scholar

[8] T. Haga, M. C. K. Tinone, H. Takenaka and H. Kinoshita, Microelectron. Eng. 30, 179–182 (1996).10.1016/0167-9317(95)00221-9Search in Google Scholar

[9] H. Kinoshit and T. Watanabe, J. Photopolym. Sci. Technol. 13, 379–384 (2000).10.2494/photopolymer.13.379Search in Google Scholar

[10] H. Kinoshita and T. Watanabe, Jpn. J. Appl. Phys. 39, 6771 (2000).10.1143/JJAP.39.6771Search in Google Scholar

[11] H. Kinoshita, T. Watanabe, Y. Li, A. Miyafuji, T. Oshino, et al., Proc. SPIE. 3997, 70 (2000).Search in Google Scholar

[12] K. Hamamoto, T. Watanabe, H. Tsubakino, H. Kinoshita, T. Shoki, et al., J. Photopolym. Sci. Technol. 14, 567 (2001).10.2494/photopolymer.14.567Search in Google Scholar

[13] K. Hamamoto, T. Watanabe, H. Hada, H. Komano, S. Kishimura, et al., Proc. SPIE. 4688, 664 (2002).Search in Google Scholar

[14] Y. Fukushima, T. Watanabe, R. Ohnishi, H. Kinoshita, H. Shiotani, et al., J. Photopolym. Sci. Technol. 20, 419–422 (2007).10.2494/photopolymer.20.419Search in Google Scholar

[15] T. Watanabe, Y. Fukushima, H. Shiotani, R. Ohnishi, S. Suzuki, et al., Jpn. J. Appl. Phys. 46, 6118 (2007).10.1143/JJAP.46.6118Search in Google Scholar

[16] Y. Fukushima, T. Watanabe, R. Ohnishi, H. Shiotani, S. Suzuki, et al., Jpn. J. Appl. Phys. 46, 6198 (2007).10.1143/JJAP.46.6198Search in Google Scholar

[17] Y. Yamaguchi, Y. Fukushima, T. Iguchi, H. Kinoshita, T. Harada, et al., J. Photopolym. Sci. Technol. 23, 681–686 (2010).10.2494/photopolymer.23.681Search in Google Scholar

[18] Y. Fukushima, N. Sakagami, T. Kimura, Y. Kamaji, T. Iguchi, et al., Jpn. J. Appl. Phys. 49, 06GD06 (2010).10.1143/JJAP.49.06GD06Search in Google Scholar

[19] Y. Fukushima, Y. Yamaguchi, T. Kimura, T. Iguchi, T. Harada, et al., J. Photopolym. Sci. Technol. 23, 673–680 (2010).10.2494/photopolymer.23.673Search in Google Scholar

[20] T. Urayama, T. Watanabe, Y. Yamaguchi, N. Matsuda, Y. Fukushima, et al., J. Photopolym. Sci. Technol. 24, 153–157 (2011).10.2494/photopolymer.24.153Search in Google Scholar

[21] H. Kinoshita, T. Haga, K. Hamamoto, S. Takada, N. Kazui, et al., J.Vac.Sci.Technol. B22, 264–267 (2004).10.1116/1.1643057Search in Google Scholar

[22] K. Hamamoto, Y. Tanaka, T. Yoshizumi, N. Hosokawa, N. Sakaya, et al., Jpn. J. Appl. Phys. 45, 5378 (2006).10.1143/JJAP.45.5378Search in Google Scholar

[23] H. Kinoshita, K. Hamamoto, N. Sakaya, M. Hosoya and T. Watanabe, Jpn. J. Appl. Phys. 46, 6113 (2007).10.1143/JJAP.46.6113Search in Google Scholar

[24] T. Harada, J. Kishimoto, T. Watanabe, H. Kinoshita and D. G. Lee, J. Vac. Sci. Technol. B 27, 3203 (2009).10.1116/1.3258633Search in Google Scholar

[25] T. Harada, M. Nakasuji, T. Kimura, T. Watanabe, H. Kinoshita, et al., J. Vac. Sci. Technol. B 29, 06F503 (2011).10.1116/1.3657525Search in Google Scholar

[26] T. Harada, M. Nakasuji, M. Tada, Y. Nagata, T. Watanabe, et al., Jpn. J. Appl. Phys. 50, 06GB03 (2011).10.7567/JJAP.50.06GB03Search in Google Scholar

[27] T. Harada, M. Nakasuji, T. Kimura, Y. Nagata, T. Watanabe, et al., Proc. SPIE. 8081, 80810K (2011).10.1117/12.896576Search in Google Scholar

[28] H. Kinoshita, T. Harada, M. Nakasuji, Y. Nagata and T. Watanabe, Microelectron. Eng. 88, 2000–2003 (2011).10.1016/j.mee.2011.02.060Search in Google Scholar

[29] M. Nakasuji, A. Tokimasa, T. Harada, Y. Nagata, T. Watanabe, et al., Jpn. J. Appl. Phys. 51, 06FB09 (2012).10.7567/JJAP.51.06FB09Search in Google Scholar

[30] T. Harada, Y. Tanaka, T. Amano, Y. Usui, T. Watanabe, et al., Proc SPIE. 9048, 90483F (2014).10.1117/12.2050936Search in Google Scholar

[31] Y. Platonov, J. Rodriguez, M. Kriese, E. Gullikson, T. Harada, et al., Proc. SPIE. 8076, 80760N (2011).10.1117/12.889519Search in Google Scholar

Received: 2015-3-24
Accepted: 2015-5-13
Published Online: 2015-7-1
Published in Print: 2015-8-1

©2015 THOSS Media & De Gruyter

Articles in the same Issue

  1. Cover and Frontmatter
  2. Views
  3. ITRS lithography roadmap: 2015 challenges
  4. Community
  5. EOS NEWS: Report from the World of Photonics Congress 2015
  6. Conference Notes
  7. Conference Calendar
  8. Topical Issue: Optical Lithography
  9. Editorial
  10. Introduction to the special issue on optical lithography
  11. Review Articles
  12. How to make lithography patterns print: the role of OPC and pattern layout
  13. Exposure tool control for advanced semiconductor lithography
  14. Performance of 100-W HVM LPP-EUV source
  15. Resist material options for extreme ultraviolet lithography
  16. Development of element technologies for EUVL
  17. Research Articles
  18. Focus tolerance influenced by source size in Talbot lithography
  19. Flat-field anastigmatic mirror objective for high-magnification extreme ultraviolet microscopy
https://doi.org/10.1515/aot-2015-0027
Keywords for this article
defect; EUVL; exposure system; interference lithography; mask; phase defect; reflectivity; resist

Articles in the same Issue

  1. Cover and Frontmatter
  2. Views
  3. ITRS lithography roadmap: 2015 challenges
  4. Community
  5. EOS NEWS: Report from the World of Photonics Congress 2015
  6. Conference Notes
  7. Conference Calendar
  8. Topical Issue: Optical Lithography
  9. Editorial
  10. Introduction to the special issue on optical lithography
  11. Review Articles
  12. How to make lithography patterns print: the role of OPC and pattern layout
  13. Exposure tool control for advanced semiconductor lithography
  14. Performance of 100-W HVM LPP-EUV source
  15. Resist material options for extreme ultraviolet lithography
  16. Development of element technologies for EUVL
  17. Research Articles
  18. Focus tolerance influenced by source size in Talbot lithography
  19. Flat-field anastigmatic mirror objective for high-magnification extreme ultraviolet microscopy
Sign up now to receive a 20% welcome discount
Institutional Access
How does access work?
Have an idea on how to improve our website?
Please write us.
© 2025 De Gruyter Brill
Downloaded on 25.9.2025 from https://www.degruyterbrill.com/document/doi/10.1515/aot-2015-0027/html
Scroll to top button