Abstract
This is a review paper to show how we control exposure tool parameters in order to satisfy patterning performance and productivity requirements for advanced semiconductor lithography. In this paper, we will discuss how we control illumination source shape to satisfy required imaging performance, heat-induced lens aberration during exposure to minimize the aberration impact on imaging, dose and focus control to realize uniform patterning performance across the wafer and patterning position of circuit patterns on different layers. The contents are mainly about current Nikon immersion exposure tools.
Acknowledgments
The author would like to thank Junji Ikeda, Hirotaka Kono, Takayuki Funatsu and Tsuyoshi Toki of Nikon Corporation for helpful discussions and data supply.
Appendix
Pupilgram modulation model
Though the model was originally proposed for pupilgram error analysis, it can be used for freeform pupilgram adjustment. In the model, pupilgram modulation can be expressed by linear combinations of Zernike intensity modulation functions and Zernike distortion modulation functions. These functions are orthogonal and can be expressed by a combination of Zernike polynomials. Some of these polynomials are graphically described in Figure 16. These polynomials are suitable for a Zernike linear combination analysis method to predict the OPE response to changes in the pupilgram. By using this model, we can optimize the intensity distribution of the pupil to minimize the OPE error relatively gently comparing with grid-based optimizations and therefore retaining the pupilgram’s original SMO solution characteristics.
We define the modulated pupilgram Imodulated(x,y) using the equation below.

where (x, y) is the pupil coordinate, Ioriginal(x+Dx(x, y), y+Dy(x, y)) is the original pupilgram intensity distribution, T(x, y) is the intensity modulation term, Dx(x, y) is the distortion function in x, Dy(x, y) is the distortion function in y, PSF is a Gaussian point-spread function in pupil that generates blur and C is a constant to express a background intensity offset.
In our definition of distortion, the pure shape modulations are expressed without any intensity modulations. It only describes a ‘remapping’ of the coordinate positions in the pupil. This equation also defines the hierarchy of the modulation components. The equation is also used for pupilgram error component analysis, which will be discussed in the last section of this paper.
The total intensity filtering effect can be expressed by a sum of component filtering effects Ti(x, y) as

where i is a positive integer.
For intensity modulation, we use Fringe Zernike functions, which are very familiar in the microlithography industry as a means to express wavefront aberrations. However, direct use of Fringe Zernike functions would not be so useful because Fringe Zernike functions take on negative values, which are not realistic for expressing the intensity filtering distribution. In order to make the intensity filtering description physically meaningful, we would need to use a combination of Fringe Zernike functions as basis functions, but such combinations are no longer mutually orthogonal.
Therefore, we propose to use Fringe Zernike functions applied in exponential as

where m is a positive integer.
In this case, negative values of the Zernike functions are physically meaningful and, when zero, give no filtering effect over the entire pupil.
Now the intensity filtering (modulation) effect can be expressed as a linear combination of Fringe Zernike functions as basis functions, as shown below.

One example of the effect of the Zernike intensity modulation is shown in Figure 3.
As for distortion modulation, we cannot directly use the Fringe Zernike functions since they are not sufficient to describe the two-dimensional distortion functions. We therefore propose to use the orthogonal distortion functions shown in Table 3. These are expressed by simple linear combinations of Fringe Zernike functions. The functions form an orthogonal series. We call these Zernike distortion modulation functions.


Graphical example of Zernike distortion modulation functions and Zernike intensity modulation functions.
(A) Zernike (pupil) distortion modulation functions.
(B) Zernike (pupil) intensity modulation functions.
Up to 9th order pupil distortion functions.
Number | Pupil distortion function |
---|---|
Dist. 1 | (D1x, D1y)=(Z1, 0) |
Dist. 2 | (D2x, D2y)=(0, Z1) |
Dist. 3 | (D3x, D3y)=(Z2, Z3) |
Dist. 4 | (D4x, D4y)=(Z2, -Z3) |
Dist. 5 | (D5x, D5y)=(Z3, Z2) |
Dist. 6 | (D6x, D6y)=(Z4, 0) |
Dist. 7 | (D7x, D7y)=(0, Z4) |
Dist. 8 | (D8x, D8y)=(Z5, Z6) |
Dist. 9 | (D9x, D9y)=(Z6, -Z5) |
Dist. 10 | (D10x, D10y)=(Z5, -Z6) |
Dist. 11 | (D11x, D11y)=(Z6, Z5) |
Dist. 12 | (D12x, D12y)=(Z7, Z8) |
Dist. 13 | (D13x, D13y)=(Z7, -Z8) |
Dist. 14 | (D14x, D14y)=(Z8, Z7) |
Dist. 15 | (D15x, D15y)=(Z10, Z11) |
Dist. 16 | (D16x, D16y)=(Z11, -Z10) |
Dist. 17 | (D17x, D17y)=(Z10, -Z11) |
Dist. 18 | (D18x, D18y)=(Z11, Z10) |
Dist. 19 | (D19x, D19y)=(Z9, 0) |
Dist. 20 | (D20x, D20y)=(0, Z9) |
Dist. 21 | (D21x, D21y)=(Z12, Z13) |
Dist. 22 | (D22x, D22y)=(Z13, -Z12) |
Dist. 23 | (D23x, D23y)=(Z12, -Z13) |
Dist. 24 | (D24x, D24y)=(Z13, Z12) |
Dist. 25 | (D25x, D25y)=(Z17, Z18) |
Dist. 26 | (D26x, D26y)=(Z18, -Z17) |
Dist. 27 | (D27x, D27y)=(Z17, -Z18) |
Dist. 28 | (D28x, D28y)=(Z18, Z17) |
Dist. 29 | (D29x, D29y)=(Z14, Z15) |
Dist. 30 | (D30x, D30y)=(Z14, -Z15) |
Dist. 31 | (D31x, D31y)=(Z15, Z14) |
Dist. 32 | (D32x, D32y)=(Z19, Z20) |
Dist. 33 | (D33x, D33y)=(Z20, -Z19) |
Dist. 34 | (D34x, D34y)=(Z19, -Z20) |
Dist. 35 | (D35x, D35y)=(Z20, Z19) |
Dist. 36 | (D36x, D36y)=(Z26, Z27) |
Dist. 37 | (D37x, D37y)=(Z27, -Z26) |
Dist. 38 | (D38x, D38y)=(Z16, 0) |
Dist. 39 | (D39x, D39y)=(0, Z16) |
Dist. 40 | (D40x, D40y)=(Z21, Z22) |
Dist. 41 | (D41x, D41y)=(Z22, -Z21) |
Dist. 42 | (D42x, D42y)=(Z21, -Z22) |
Dist. 43 | (D43x, D43y)=(Z22, Z21) |
Dist. 44 | (D44x, D44y)=(Z28, Z29) |
Dist. 45 | (D45x, D45y)=(Z29, -Z28) |
Dist. 46 | (D46x, D46y)=(Z23, Z24) |
Dist. 47 | (D47x, D47y)=(Z23, -Z24) |
Dist. 48 | (D48x, D48y)=(Z24, Z23) |
Dist. 49 | (D49x, D49y)=(Z30, Z31) |
Dist. 50 | (D50x, D50y)=(Z31, -Z30) |
Dist. 51 | (D51x, D51y)=(Z25, 0) |
Dist. 52 | (D52x, D52y)=(0, Z25) |
Dist. 53 | (D53x, D53y)=(Z32, Z33) |
Dist. 54 | (D54x, D54y)=(Z33, -Z32) |
Dist. 55 | (D55x, D55y)=(Z34, Z35) |
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©2015 THOSS Media & De Gruyter
Articles in the same Issue
- Cover and Frontmatter
- Views
- ITRS lithography roadmap: 2015 challenges
- Community
- EOS NEWS: Report from the World of Photonics Congress 2015
- Conference Notes
- Conference Calendar
- Topical Issue: Optical Lithography
- Editorial
- Introduction to the special issue on optical lithography
- Review Articles
- How to make lithography patterns print: the role of OPC and pattern layout
- Exposure tool control for advanced semiconductor lithography
- Performance of 100-W HVM LPP-EUV source
- Resist material options for extreme ultraviolet lithography
- Development of element technologies for EUVL
- Research Articles
- Focus tolerance influenced by source size in Talbot lithography
- Flat-field anastigmatic mirror objective for high-magnification extreme ultraviolet microscopy
Articles in the same Issue
- Cover and Frontmatter
- Views
- ITRS lithography roadmap: 2015 challenges
- Community
- EOS NEWS: Report from the World of Photonics Congress 2015
- Conference Notes
- Conference Calendar
- Topical Issue: Optical Lithography
- Editorial
- Introduction to the special issue on optical lithography
- Review Articles
- How to make lithography patterns print: the role of OPC and pattern layout
- Exposure tool control for advanced semiconductor lithography
- Performance of 100-W HVM LPP-EUV source
- Resist material options for extreme ultraviolet lithography
- Development of element technologies for EUVL
- Research Articles
- Focus tolerance influenced by source size in Talbot lithography
- Flat-field anastigmatic mirror objective for high-magnification extreme ultraviolet microscopy