Use of Post-Ionisation Techniques to Complement SIMS Analysis. A Review With Practical Aspects

H.J. Mathieu,; D. Leonard,

doi:10.1515/HTMP.1998.17.1-2.29

Startseite Naturwissenschaften Use of Post-Ionisation Techniques to Complement SIMS Analysis. A Review With Practical Aspects

Artikel Open Access

Use of Post-Ionisation Techniques to Complement SIMS Analysis. A Review With Practical Aspects

H.J. Mathieu, und D. Leonard,

Veröffentlicht/Copyright: 6. Mai 2011

Artikel downloaden (PDF)

Veröffentlicht von

Veröffentlichen auch Sie bei De Gruyter Brill

Manuskript einreichen Informationen für Autor*innen Erkunden Sie dieses Fachgebiet

Aus der Zeitschrift High Temperature Materials and Processes Band 17 Heft 1-2

MLA
APA
Harvard
Chicago
Vancouver

MLA
APA
Harvard
Chicago
Vancouver

Mathieu,, H.J. and Leonard,, D.. "Use of Post-Ionisation Techniques to Complement SIMS Analysis. A Review With Practical Aspects" High Temperature Materials and Processes, vol. 17, no. 1-2, 1998, pp. 29-44. https://doi.org/10.1515/HTMP.1998.17.1-2.29

Mathieu,, H. & Leonard,, D. (1998). Use of Post-Ionisation Techniques to Complement SIMS Analysis. A Review With Practical Aspects. High Temperature Materials and Processes, 17(1-2), 29-44. https://doi.org/10.1515/HTMP.1998.17.1-2.29

Mathieu,, H. and Leonard,, D. (1998) Use of Post-Ionisation Techniques to Complement SIMS Analysis. A Review With Practical Aspects. High Temperature Materials and Processes, Vol. 17 (Issue 1-2), pp. 29-44. https://doi.org/10.1515/HTMP.1998.17.1-2.29

Mathieu,, H.J. and Leonard,, D.. "Use of Post-Ionisation Techniques to Complement SIMS Analysis. A Review With Practical Aspects" High Temperature Materials and Processes 17, no. 1-2 (1998): 29-44. https://doi.org/10.1515/HTMP.1998.17.1-2.29

Mathieu, H, Leonard, D. Use of Post-Ionisation Techniques to Complement SIMS Analysis. A Review With Practical Aspects. High Temperature Materials and Processes. 1998;17(1-2): 29-44. https://doi.org/10.1515/HTMP.1998.17.1-2.29

Kopie

In die Zwischenablage kopiert

BibTeX EndNote RIS

Published Online: 2011-05-06

Published in Print: 1998-01

Artikel in diesem Heft

TABLE OF CONTENTS
Preface
Surface Segregated Layer and Native Oxide Layer Formed on High-Purity Iron Base Alloys by Angle-Resolved XPS
Sputter Depth Profiling of Thin Films
Use of Post-Ionisation Techniques to Complement SIMS Analysis. A Review With Practical Aspects
Mossbauer Spectroscopy and its Application to Materials Research
Positron Annihilation Method: Thermal and Non-Thermal Defects in Refractory Intermetallics
Nanoscale Microstructural Analyses by Atom Probe Field Ion Microscopy
REVIEW: Quantitative Transmission Electron Microscopy with Imaging Plates
Glow Discharge Optical Emission Spectroscopy- The Fundamental Principles
Structural Characterization of Surfaces and Interfaces of Materials by Applying X-ray Total External Reflection Phenomena
Structural Studies of Aqueous Solutions by the Anomalous X-ray Scattering Method

Zeitschrift durchsuchen In dieser Zeitschrift suchen

https://doi.org/10.1515/HTMP.1998.17.1-2.29

Creative Commons

BY-NC-ND 3.0

Artikel in diesem Heft

TABLE OF CONTENTS
Preface
Surface Segregated Layer and Native Oxide Layer Formed on High-Purity Iron Base Alloys by Angle-Resolved XPS
Sputter Depth Profiling of Thin Films
Use of Post-Ionisation Techniques to Complement SIMS Analysis. A Review With Practical Aspects
Mossbauer Spectroscopy and its Application to Materials Research
Positron Annihilation Method: Thermal and Non-Thermal Defects in Refractory Intermetallics
Nanoscale Microstructural Analyses by Atom Probe Field Ion Microscopy
REVIEW: Quantitative Transmission Electron Microscopy with Imaging Plates
Glow Discharge Optical Emission Spectroscopy- The Fundamental Principles
Structural Characterization of Surfaces and Interfaces of Materials by Applying X-ray Total External Reflection Phenomena
Structural Studies of Aqueous Solutions by the Anomalous X-ray Scattering Method