Startseite Electrical conductivity variation of (Bi2Te3)0.25(Sb2Te3)0.75 crystal grown using the zone melting method
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Electrical conductivity variation of (Bi2Te3)0.25(Sb2Te3)0.75 crystal grown using the zone melting method

  • Ghassem Kavei , Kamran Ahmadi und Ashkan Kavei
Veröffentlicht/Copyright: 30. März 2014
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International Journal of Materials Research
Aus der Zeitschrift International Journal of Materials Research Band 104 Heft 3

Abstract

Experiments and numerical results are presented to demonstrate the adverse effects of a zone melting method in (Bi2Te3)0.25(Sb2Te3)0.75 thermoelectric crystallization, on mass transport. The zone melting method shows a considerable effect from the deflection of the solid–liquid interface, and the Bi2Te3 stoichiometry changes significantly. Electrical conductivity measurements of the crystallized ingot were carried out at stepped intervals of length (each step is 7 mm). A considerable gradient was observed in the readings from the tip to the end of the ingot. To understand this variation taking into account all empirical aspects of crystal growth, we conducted a numerical study because it gives vast information on the crystal growth process. Simulating the crystallization process and characterization of the ingot reveals a variation in the measured values of the thermoelectric parameters, which was attributed to the deviation of Bi2Te3 concentration along the ingot.

Keywords: Zone melting method; Travelling heater method (THM); X-ray diffraction (XRD); X-ray fluorescence (XRF)
* Correspondence address, Prof. G. Kavei, Semiconductor Division, Material and Energy Research Centre (MERC), Meshgin-Dasht, Karaj, P.O. Box 31787-316, Tehran 3177983634, Iran. Tel.: +98 263 6204131-4, Fax: +98 263 6201888, E-mail:

References

[1] G.Bischopink, K.W.Benz: J. Cryst. Growth128 (1993) 466. 10.1016/0022-0248(93)90368-7Suche in Google Scholar

[2] A.N.Danilewski, P.Dold, K.W.Benz: J. Cryst. Growth121 (1992) 305. 10.1016/0022-0248(92)90140-ESuche in Google Scholar

[3] E.Koukharenko, N.Frety, V.G.Shepelevich, J.C.Tedenac: J. Alloys Compd.299 (2000) 254. 10.1016/S0925-8388(99)00688-XSuche in Google Scholar

[4] O.Sokolov, B.Skipidarov, S.Ya, N.I.Duvankovi: J. Cryst. Growth, 236, 2002,181. 10.1016/S0022-0248(01)01808-5Suche in Google Scholar

[5] M.H.Ettenberg, J.R.Maddux, P.J.Taylor, W.A.JesserF.D.Rosi: J. Cryst. Growth179 (1997) 495. 10.1016/S0022-0248(97)00133-4Suche in Google Scholar

[6] T.Boeck, P.Rudolph: J. Cryst. Growth79 (1986) 105. 10.1016/0022-0248(86)90423-9Suche in Google Scholar

[7] R.A.Meric, S.Dost, B.Lent, R.F.Redden: Int. J. Appl. Electromagnetics Mechanics, 10 (6) (1999) 5056.10.3233/JAE-1999-164Suche in Google Scholar

[8] M.C.Martinez-Tomas, V.Munos-Sanjose, C.Reig: J. Cryst. Growth243 (2002) 463. 10.1016/S0022-0248(02)01529-4Suche in Google Scholar

[9] Y.Okano, H.Kondo, W.Kishimoto, L.Li, S.Dost: J. Cryst. Growth237–239, (2002) 1716.10.1016/S0022-0248(01)02342-9Suche in Google Scholar

[10] S.Dost, Y.Liu, B.Lent: 16ème Congrès Français de Mécanique Nice, 1–5 septembre (2003) 1.Suche in Google Scholar

[11] V.Kumar, S.Dost, F.Durst: Applied Mathematical Modelling 31 Issue3 (2007) 589. 10.1016/j.apm.2005.11.022Suche in Google Scholar

[12] F.V.Wald, R.O.Bell: J. Cryst. Growth30 (1975) 29. 10.1016/0022-0248(75)90195-5Suche in Google Scholar

[13] T.A.Cherepanova, V.N.Kuzovkov: J. Cryst. Growth, 65, (1983) 55. 10.1016/0022-0248(83)90036-2Suche in Google Scholar

[14] Z.Lin, M.Li, Y.Zhou: J. Mater. Sci. Technol.23 (2007) 145. 10.1179/174328407X154338Suche in Google Scholar

[15] S.O.Kasap: Principle of Electronic Materials and Devices, Mc Graw Hill (2002) Chapter 1.Suche in Google Scholar

[16] S.M.Sze: Semiconductor Devices: physics and technology, John Wiley & Sons Inc. (2002) Chapter 8.Suche in Google Scholar

[17] G.Kavei, D.Kavei: J. Thermoelectricity2 (2011) 26.Suche in Google Scholar

[18] G.Kavei, M.A.Karami: Bull. Mater. Sci.29, (2006) 659.Suche in Google Scholar

[19] ASM Alloy Phase Diagrams Center, 2007; data from T.Caillat et al.: J. Phys. Chem. Solids, 53 (1992) 227, and M. J.Smith, R. J.Knight, C. W.Spencer: J. Appl. Phys. Vol. 33, No. 7, (1962) 2186.Suche in Google Scholar

[20] S.Dost, Y.C.Liu, B.Lent, R.F.Redden: Int. J. Appl. Electromag. & Mech.17 (2003) 271.Suche in Google Scholar

[21] J.Wolberg: Data Analysis Using the Method of Least Squares - Extracting the Most Information from Experiments, Springer, Germany (2005).Suche in Google Scholar

[22] Y.C.Liu, S.Dost, B.Lent, R.F.Redden: J. Cryst. Growth254 (2003) 285. 10.1016/S0022-0248(03)01140-0Suche in Google Scholar

Received: 2012-2-16
Accepted: 2012-8-15
Published Online: 2014-03-30
Published in Print: 2013-03-14

© 2013, Carl Hanser Verlag, München

Artikel in diesem Heft

  1. Contents
  2. Contents
  3. Original Contributions
  4. The thermodynamics of boron extraction from liquid silicon using SiO2–CaO–MgO slag treatment
  5. Viscosity estimation of semi-solid alloys based on thermal simulation compression tests
  6. Original Contributions
  7. Experimental study of phase equilibria in the “SnO”–CaO–SiO2 system in equilibrium with tin metal
  8. Prediction of the solidification path of Al-4.37Cu-27.02Mg ternary eutectic alloy with a unified microsegregation model coupled with Thermo-Calc
  9. Evaluation of the effective diffusion coefficient of boron in the Fe2B phase in the presence of chemical stresses
  10. Morphology evolution of γ′ precipitates in GTD-111 Ni-based superalloy with heat treatment parameters
  11. Hot forming of a new steel used in stamping dies and tooling
  12. Mechanical properties and corrosion behaviour of freestanding, precipitate-free magnesium WE43 thin films
  13. Sliding wear performance of Fe-, Ni- and Co-based hardfacing alloys for PTA cladding
  14. The suitability of selected austenitic stainless steels and hastelloy C276 alloys as substrates for thin film deposition using spray pyrolysis
  15. Synthesis, structural, optical and thermal analysis of nanostructured ZnO
  16. Electrical conductivity variation of (Bi2Te3)0.25(Sb2Te3)0.75 crystal grown using the zone melting method
  17. X-ray Absorption Near Edge Structure Studies of Pb1-xMnxTe(In, Ga) Systems
  18. DGM News
  19. DGM News
  20. Grain refining of aluminium alloys and silicon by means of boron-nitride particles
https://doi.org/10.3139/146.110864
Schlagwörter für diesen Artikel
Zone melting method; Travelling heater method (THM); X-ray diffraction (XRD); X-ray fluorescence (XRF)

Artikel in diesem Heft

  1. Contents
  2. Contents
  3. Original Contributions
  4. The thermodynamics of boron extraction from liquid silicon using SiO2–CaO–MgO slag treatment
  5. Viscosity estimation of semi-solid alloys based on thermal simulation compression tests
  6. Original Contributions
  7. Experimental study of phase equilibria in the “SnO”–CaO–SiO2 system in equilibrium with tin metal
  8. Prediction of the solidification path of Al-4.37Cu-27.02Mg ternary eutectic alloy with a unified microsegregation model coupled with Thermo-Calc
  9. Evaluation of the effective diffusion coefficient of boron in the Fe2B phase in the presence of chemical stresses
  10. Morphology evolution of γ′ precipitates in GTD-111 Ni-based superalloy with heat treatment parameters
  11. Hot forming of a new steel used in stamping dies and tooling
  12. Mechanical properties and corrosion behaviour of freestanding, precipitate-free magnesium WE43 thin films
  13. Sliding wear performance of Fe-, Ni- and Co-based hardfacing alloys for PTA cladding
  14. The suitability of selected austenitic stainless steels and hastelloy C276 alloys as substrates for thin film deposition using spray pyrolysis
  15. Synthesis, structural, optical and thermal analysis of nanostructured ZnO
  16. Electrical conductivity variation of (Bi2Te3)0.25(Sb2Te3)0.75 crystal grown using the zone melting method
  17. X-ray Absorption Near Edge Structure Studies of Pb1-xMnxTe(In, Ga) Systems
  18. DGM News
  19. DGM News
  20. Grain refining of aluminium alloys and silicon by means of boron-nitride particles
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