The Ga/In phase width ( y ) and the distribution of the two triels within the polyanions of known binary ( x = 1, 2) and new ternary ‘intermediate’ ( x = 1–2) alkali trielides A x (Ga 1− y In y ) 3 ( A = K, Rb, Cs) was investigated in a synthetic (slow cooling of the melts of the three elements), crystallographic (X-ray single crystal) and bond theoretical (FP-LAPW DFT bandstructure calculation) study. The Cs 2 In 3 -type structure ( x = 2, series A , tetragonal, I 4/ mmm ) exhibits layers of four-connected closo octahedra [ M 6 ] 4− . Ternary K compounds of this type were yielded within a large range ( y = 0–0.87), whereas isotypic Rb/Cs trielides exist only at higher In contents (>52/69%). Geometric criteria determine not only the Ga/In stability ranges but also the occurrence of a commensurate superstructure at approx. 33% In (K 2 Ga 2.17 In 0.83 : P 4 2 / ncm , a = 879.83(4), c = 1557.66(10) pm, R 1 = 0.0887), in which the octahedra are slightly tilted against the layers. Cesium compounds of the RbGa 3 -type structure ( x = 1, C , tetragonal, I 4̅ m 2), which exhibits a 3D network of all- exo bonded closo dodecahedra [ M 8 ] 2− and four-bonded M − anions, are stable throughout the whole substitutional range CsGa 3 –CsIn 3 . The maximum possible In content increases with increasing size of A + (Cs: 100%, Rb: 30%, K: 8% In). The similarities between these two tetragonal structures are consistent with the occurrence of two new structure types of ‘intermediate’ compounds A 7 M 15 ( x = 1.4, 1 B / 2 B ), which differ in the stacking sequences of double layers of novel six-fold exo -bonded pentagonal bipyramidal closo clusters [ M 7 ] 3− connected via four-bonded M − (e.g. 1 B : Cs 7 Ga 8.4 In 6.6 , P 4̅ m 2, a = 656.23(3), c = 1616.0(1) pm, R 1 = 0.0742; 2 B : Rb 7 Ga 8.1 In 6.9 , P 4 2 / nmc , a = 665.64(2), c = 3140.9(2) pm, R 1 = 0.0720). The Rb/Cs compounds of these types are only stable in a limited Ga/In region and with a distinct Ga/In distribution within the [ M 7 ] clusters. According to the close relation between the structures A , B and C , the structure family is characterised by the occurrence of stacking faults and diffuse scattering, indicating the existence of further members of this series. The new compound Cs 5 Ga 3.1 In 5.9 ( x = 1.667, P 4̅ m 2, a = 654.62(2), c = 3281.5(2) pm, R 1 = 0.1005) is a reasonably periodically ordered stacking variant containing layers A and double layers B in parallel.