Abstract
Cu2O can be electrodeposited epitaxially onto Si (001) single-crystal substrates with an orientation relationship that can be described as a 45° rotation around the 〈001〉 direction that both crystals have in common along the growth direction. We show that this orientation relationship corresponds to maximum “reciprocal-space overlap”. In apparent contradiction to the unique orientation relationship, conventional, high-resolution, and high-resolution analytical transmission electron microscopy has revealed that an amorphous interlayer, which has a thickness of about 4 nm and mainly consists of SiO2, separates the Cu2O layer and the Si substrate. Potential micromechanisms for the evolution of this structure during early stages of growth are discussed.
Abstract
Elektrolytische Abscheidung von Cu2O auf Si-(001)-Einkristall-Substraten ermöglicht die Herstellung epitaktischer Schichten. Die Orientierungsbeziehung zwischen Cu2O und Si kann man als 45°-Drehung um die 〈001〉-Richtung beschreiben, welche den beiden Kristallgittern entlang der Wachstumsrichtung gemein ist. Wir zeigen, dass diese Orientierungsbeziehung maximalem „Überlapp im reziproken Raum“ entspricht. In scheinbarem Widerspruch zu der eindeutigen Orientierungsbeziehung zwischen Cu2O und Si, die wir beobachten, zeigen konventionelle, hochauflösende und hochauflösende analytische Transmissions-Elektronenmikroskope eine etwa 4 nm dicke amorphe Schicht zwischen der Cu2O-Schicht und dem Si-Substrat, welche vorwiegend aus SiO2 besteht. Mögliche Mikromechanismen für die Entstehung dieser Struktur werden diskutiert.
Funding statement: We thank N. Zheng for the specimen preparation and acknowledge financial support of the National Science Foundation under contract number DMR-0114134, the DARPA under contract number N00014-00-1-0881, and the Ohio Board of Regents (OBR).
References
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© 2003 Carl Hanser Verlag, München
Articles in the same Issue
- Frontmatter
- Editorial
- Editorial
- Articles/Aufsätze
- The role of oxidation-induced cavities on the failure of the thermally grown oxide on binary β-NiAl alloys
- Phase stability of Y + Gd co-doped zirconia
- Mechanisms governing the distortion of alumina-forming alloys upon cyclic oxidation
- High-temperature oxidation of FeCrAl alloys: the effect of Mg incorporation into the alumina scale
- Nonlinear dielectric properties at oxide grain boundaries
- TEM observations of singular grain boundaries and their roughening transition in TiO2-excess BaTiO3
- Processing of dense MgO substrates for high-temperature superconductors
- Microwave-induced crystallization of polysilazane-derived silicon carbonitride
- Schottky barrier formation in liquid-phase-sintered silicon carbide
- SrTiO3: a model electroceramic
- Optical properties and electronic structure of oxidized and reduced single-crystal strontium titanate
- Spreading of liquid Ag and Ag–Mo alloys on molybdenum substrates
- Nanoalloying in mixed AgmAun nanowires
- Never ending saga of a simple boundary
- Comparison of interfacial chemistry at Cu/α-alumina and Cu/γ-alumina interfaces
- Microstructure of Cu2O/Si interfaces, made by epitaxial electrodeposition
- Metal/oxide interfaces and their reaction with hydrogen
- Amorphous films at metal/ceramic interfaces
- Some thoughts on source monochromation and the implications for electron energy loss spectroscopy
- Determination of the contrast transfer function by analysing diffractograms of thin amorphous foils
- Progress in the preparation of cross-sectional TEM specimens by ion-beam thinning
- Quantification of interfacial segregation by analytical electron microscopy
- Quantification of elemental segregation to lath and grain boundaries in low-alloy steel by STEM X-ray mapping combined with the ζ-factor method
- Microstructure of Al/Ti metallization layers
- Connectivity of CSL grain boundaries and the role of deviations from exact coincidence
- Effect of laser shock processing on the microstructure and mechanical properties of pure Cu
- Growth and microstructure of iron nitride layers and pore formation in ε-Fe3N
- Phase diagram of the Al–Cu–Fe quasicrystal-forming alloy system
- Notifications/Mitteilungen
- Personal/Personelles
- Gesellschaftsnachricht
- International Conferences
Articles in the same Issue
- Frontmatter
- Editorial
- Editorial
- Articles/Aufsätze
- The role of oxidation-induced cavities on the failure of the thermally grown oxide on binary β-NiAl alloys
- Phase stability of Y + Gd co-doped zirconia
- Mechanisms governing the distortion of alumina-forming alloys upon cyclic oxidation
- High-temperature oxidation of FeCrAl alloys: the effect of Mg incorporation into the alumina scale
- Nonlinear dielectric properties at oxide grain boundaries
- TEM observations of singular grain boundaries and their roughening transition in TiO2-excess BaTiO3
- Processing of dense MgO substrates for high-temperature superconductors
- Microwave-induced crystallization of polysilazane-derived silicon carbonitride
- Schottky barrier formation in liquid-phase-sintered silicon carbide
- SrTiO3: a model electroceramic
- Optical properties and electronic structure of oxidized and reduced single-crystal strontium titanate
- Spreading of liquid Ag and Ag–Mo alloys on molybdenum substrates
- Nanoalloying in mixed AgmAun nanowires
- Never ending saga of a simple boundary
- Comparison of interfacial chemistry at Cu/α-alumina and Cu/γ-alumina interfaces
- Microstructure of Cu2O/Si interfaces, made by epitaxial electrodeposition
- Metal/oxide interfaces and their reaction with hydrogen
- Amorphous films at metal/ceramic interfaces
- Some thoughts on source monochromation and the implications for electron energy loss spectroscopy
- Determination of the contrast transfer function by analysing diffractograms of thin amorphous foils
- Progress in the preparation of cross-sectional TEM specimens by ion-beam thinning
- Quantification of interfacial segregation by analytical electron microscopy
- Quantification of elemental segregation to lath and grain boundaries in low-alloy steel by STEM X-ray mapping combined with the ζ-factor method
- Microstructure of Al/Ti metallization layers
- Connectivity of CSL grain boundaries and the role of deviations from exact coincidence
- Effect of laser shock processing on the microstructure and mechanical properties of pure Cu
- Growth and microstructure of iron nitride layers and pore formation in ε-Fe3N
- Phase diagram of the Al–Cu–Fe quasicrystal-forming alloy system
- Notifications/Mitteilungen
- Personal/Personelles
- Gesellschaftsnachricht
- International Conferences