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Preparation and characterization of silicon nanowires using SEM/FIB and TEM

Paper presented at “XV International Conference on Electron Microscopy”, 15–18 September 2014, Cracow, Poland
  • Sayanti Banerjee , Uwe Muehle , Markus Löffler , Andre Heinzig , Jens Trommer and Ehrenfried Zschech
Published/Copyright: July 9, 2015
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Abstract

Due to the electronic and structural properties of silicon, silicon nanowires have a great potential in nanoscale electronic devices and sensors. Silicon nanowires used for reconfigurable field effect transistors are designed, synthesized and characterized after each step in order to ensure excellent electrical and physical properties of the end product and to study various process parameters. In this study, silicon nanowire based reconfigurable field effect transistors are studied as as-grown “forests”, individually, oxidized and after forming Schottky junctions. The analysis is performed using scanning electron microscopy and transmission electron microscopy. Focused ion beam based preparation was carried out in the case of samples with Schottky junctions. This paper provides a comprehensive description of sample preparation and characterization of the nanowires.


*Correspondence address, Sayanti Banerjee, MSc, Technische Universität Dresden, Dresden Center for Nanoanalysis, 01069 Dresden, Germany, Tel.: +49 351 463 35452, Fax: +49 351 463 31985, E-mail:

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Received: 2014-10-30
Accepted: 2015-03-16
Published Online: 2015-07-09
Published in Print: 2015-07-04

© 2015, Carl Hanser Verlag, München

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