Exact determination of Indium incorporation in (InxGa1–xN/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties
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Fabian Schulze
Abstract
We studied the structural and optical properties of InxGa1–xN/GaN multiple quantum wells (MQWs) on Si(111) grown by metal organic vapor phase epitaxy by means of photoluminescence, X-ray reflectometry (XRR), and high resolution X-ray diffractometry (HRXRD). The combination of both X-ray analysis methods allows a very precise determination of the structural parameters of the layer systems. In particular, the Indium incorporation and the well thickness of the optically active layers were investigated. Thus, in dependence on crystallographic quality and thicknesses, their error bars of determined values could be reduced to an accuracy of lower than 0.2 nm of well thickness and Δx = 0.02 of Indium proportion. By growing systematic series with various MOVPE deposition temperatures and times the correlations to the optical properties were determined.
© 2004 Oldenbourg Wissenschaftsverlag GmbH
Articles in the same Issue
- Editorial: Structure Analysis of Thin Films and Nanostructures
- High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers
- Exact determination of Indium incorporation in (InxGa1–xN/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties
- Annealing studies of high Ge composition Si/SiGe multilayers
- Lateral periodicity of elastic domains in MnAs/GaAs(001) epitaxial layers studied by high resolution X-ray diffraction
- X-ray reflectivity study of the influence of temperature fluctuations on the density profile of thin liquid films
- Polymeric structures at interfaces: An X-ray scattering study
- X-ray and VIS light scattering from light-induced polymer gratings
- Imaging plates – a new life for electron diffraction structure analysis
- On the superstructure of KTiO2(OH)
- Molecular and crystal structure of Ac-(Z)-ΔAbu-NMe2 and Ac-DL-Abu-NMe2 as compared to those of related molecules
- J-aggregate structures in crystals of three bisazomethine dyes
- Books Received
Articles in the same Issue
- Editorial: Structure Analysis of Thin Films and Nanostructures
- High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers
- Exact determination of Indium incorporation in (InxGa1–xN/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties
- Annealing studies of high Ge composition Si/SiGe multilayers
- Lateral periodicity of elastic domains in MnAs/GaAs(001) epitaxial layers studied by high resolution X-ray diffraction
- X-ray reflectivity study of the influence of temperature fluctuations on the density profile of thin liquid films
- Polymeric structures at interfaces: An X-ray scattering study
- X-ray and VIS light scattering from light-induced polymer gratings
- Imaging plates – a new life for electron diffraction structure analysis
- On the superstructure of KTiO2(OH)
- Molecular and crystal structure of Ac-(Z)-ΔAbu-NMe2 and Ac-DL-Abu-NMe2 as compared to those of related molecules
- J-aggregate structures in crystals of three bisazomethine dyes
- Books Received
