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Complex permittivity and predominance of non-overlapping small-polaron tunneling conduction process in copper indium selenide compound

  • Mohamed Essaleh ORCID logo EMAIL logo , Rachid Bouferra , Mohammed Mansori , Giovanni Marín , Syed M. Wasim and Dinesh Pratap Singh
Published/Copyright: January 24, 2023
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International Journal of Materials Research
From the journal International Journal of Materials Research Volume 114 Issue 2

Abstract

This paper presents a study of the complex permittivity of n-type copper indium selenide semiconductor compound at low temperatures down to −175 °C. Alternating current with frequency varying between 20 Hz and 1 MHz is applied to the material in order to measure the dielectric constant ɛ′ and dielectric loss D = ɛ″/ɛ′. ɛ′ is found to decrease with temperature and frequency, whereas D decreases with frequency and increases with temperature. The experimental data of ɛ″ agree with the expression ε ″ = A ω m ω , T , where the frequency exponent m(ω, T), calculated through the relation m ω , T = ∂ ⁡ ln ε ″ / ∂ ⁡ ln ⁡ ω T , shows a frequency and temperature dependence. The data are analyzed in light of existing theoretical models.

Keywords: Complex permittivity; NSPT; Semiconductors
Corresponding author: Mohamed Essaleh, STWMaterial-Technology, Laboratoire de Géosciences, Faculty of Sciences and Technology, Géonvironnement et Génie Civil. Cadi-Ayyad University, B.P.549, 40000, Marrakech, Morocco, E-mail:

Acknowledgments

The authors are extremely grateful to Professor Dr. Dennis Mitchell, for critically revising the manuscript.

  1. Author contributions: All the authors have accepted responsibility for the entire content of this submitted manuscript and approved submission.

  2. Research funding: None declared.

  3. Conflict of interest statement: The authors declare no conflict of interest.

  4. Data availability: The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Received: 2022-02-19
Accepted: 2022-08-29
Published Online: 2023-01-24
Published in Print: 2023-02-23

© 2023 Walter de Gruyter GmbH, Berlin/Boston

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https://doi.org/10.1515/ijmr-2022-0091
Keywords for this article
Complex permittivity; NSPT; Semiconductors

Articles in the same Issue

  1. Frontmatter
  2. Review
  3. Preparations and applications of organic conducting polymers/graphene composites in heavy metal ion sensing: a review
  4. Original Papers
  5. Complex dielectric, electric modulus, impedance, and optical conductivity of Sr3−x Pb x Fe2TeO9 (x = 1.50, 1.88 and 2.17)
  6. Complex permittivity and predominance of non-overlapping small-polaron tunneling conduction process in copper indium selenide compound
  7. Effect of Bacillus and Pseudomonas biofilms on the corrosion behavior of AISI 304 stainless steel
  8. Fabrication of magnesium oxide nanoparticles using Eucalyptus tereticornis seed extract and their characterisation
  9. Greener route for synthesis of cerium oxide and Fe-doped cerium oxide nanoparticles using acacia concinna fruit extract
  10. Phase equilibria of Ni–Al–Pd and Ni–Cr–Pd ternary systems and Ni–Al–Cr–Pd quaternary system at 1423 K
  11. Effect of grain size on oxidation behaviour of Ag-20Cu-30Cr alloys in 0.1 MPa pure O2 at 700 and 800 °C
  12. News
  13. DGM – Deutsche Gesellschaft für Materialkunde
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