3.6. The Effect of Compensation on the Mott Transition

Kapitel in diesem Buch

1. Frontmatter I
2. PREFACE 1
3. CONTENTS 8
4. CHAPTER 1 ELEMENTS OF THE BAND THEORY OF SEMICONDUCTORS
5. 1.1. The Problem of the Electronic States in Solids 11
6. 1.2. The Tight-Binding Approximation 12
7. 1.3. The Nearly Free Electron Approximation 15
8. 1.4. Effective Mass and-the Density of States 19
9. 1.5.Impurity Levels. Statistics 23
10. Chapter 2 BAND STRUCTURE OF GAPLESS SEMICONDUCTORS
11. 2.1. The Detection of the Gapless State 29
12. 2.2. Gray Tin 34
13. 2.3. Mercury Chalcogenides HgTe and HgSe 46
14. CHAPTER 3 IMPURITIES IN GAPLESS SEMICONDUCTORS
15. 3.1. The Problem of Residual Electron Concentration 75
16. 3.2. Impurities and Native Defects in Mercury Chalcogenides 79
17. 3.3. Energy of Impurity States 81
18. 3.4. Metal-Insulator Transitions 87
19. 3.5. Mott Transition in n-Type Crystals 91
20. 3.6. The Effect of Compensation on the Mott Transition 94
21. 3.7. An "Anomaly" in the Temperature Dependence of Electron Concentration 99
22. 3.8. Freeze-Out of Electrons into Acceptors under the Effect of a Magnetic Field and Pressure 102
23. 3.9. Low-Temperature Peculiarities of Conductivity 107
24. 3.10. Gapless Semiconductors Containing Magnetic Ions 116
25. CONCLUSION
26. Practical Applications of Gapless Semiconductors 124
27. Some Results and Prospects 127
28. REFERENCES 131
29. Backmatter 135