A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiO_x-Based Resistive Switching Memory

Chapters in this book

1. Frontmatter I
2. Editorial/Foreword V
3. Contents VII
4. Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs 1
5. Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation 29
6. Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory 49
7. Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices 73
8. A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiO_x-Based Resistive Switching Memory 91
9. On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System 113
10. A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications 135
11. A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission 159
12. Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices 177
13. Impact-Based Area Allocation for Yield Optimization in Integrated Circuits 199
14. Editors 215
15. List of authors 217