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Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs

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Nano Devices and Sensors
Ein Kapitel aus dem Buch Nano Devices and Sensors
© 2016 Walter de Gruyter GmbH, Berlin/Munich/Boston

© 2016 Walter de Gruyter GmbH, Berlin/Munich/Boston

Kapitel in diesem Buch

  1. Frontmatter I
  2. Editorial/Foreword V
  3. Contents VII
  4. Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs 1
  5. Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation 29
  6. Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory 49
  7. Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices 73
  8. A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory 91
  9. On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System 113
  10. A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications 135
  11. A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission 159
  12. Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices 177
  13. Impact-Based Area Allocation for Yield Optimization in Integrated Circuits 199
  14. Editors 215
  15. List of authors 217
https://doi.org/10.1515/9781501501531-002

Kapitel in diesem Buch

  1. Frontmatter I
  2. Editorial/Foreword V
  3. Contents VII
  4. Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs 1
  5. Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation 29
  6. Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory 49
  7. Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices 73
  8. A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory 91
  9. On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System 113
  10. A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications 135
  11. A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission 159
  12. Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices 177
  13. Impact-Based Area Allocation for Yield Optimization in Integrated Circuits 199
  14. Editors 215
  15. List of authors 217
Heruntergeladen am 4.5.2026 von https://www.degruyterbrill.com/document/doi/10.1515/9781501501531-002/html?lang=de
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