Startseite An E-band Variable Gain Amplifier with 24 dB-control range and 80 to 100 GHz 1 dB bandwidth in SiGe BiCMOS technology
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An E-band Variable Gain Amplifier with 24 dB-control range and 80 to 100 GHz 1 dB bandwidth in SiGe BiCMOS technology

  • Francesco Centurelli , Pietro Monsurrò , Giuseppe Scotti , Pasquale Tommasino und Alessandro Trifiletti EMAIL logo
Veröffentlicht/Copyright: 20. September 2021
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Abstract

Analysis, design, and characterization of an E-band Variable Gain Amplifier (VGA) in SiGe BiCMOS commercial technology is presented. VGA topologies are compared in terms of their capability to contribute to receiver linearity and dynamic range. The proposed VGA is based on a Gilbert multiplier cell exploiting current cancellation to enhance control range and linearity. A 1 dB bandwidth ranging from 80 to 100 GHz, a 24 dB gain control range and a −11.5 dBm input 1 dB compression point have been measured.


Corresponding author: Alessandro Trifiletti, Department of Information Engineering, Electronics, Telecommunications, Sapienza University of Rome, Rome, Italy, E-mail:

Funding source: European ECSEL-JU/EU-H2020

Award Identifier / Grant number: Grant TARANTO no. 737454

  1. Author contribution: All the authors have accepted responsibility for the entire content of this submitted manuscript and approved submission.

  2. Research funding: This work is supported by European ECSEL-JU/EU-H2020 under grant TARANTO no. 737454.

  3. Conflict of interest statement: The authors declare no conflicts of interest regarding this article.

References

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Received: 2020-08-06
Revised: 2021-05-19
Accepted: 2021-07-18
Published Online: 2021-09-20
Published in Print: 2021-12-20

© 2021 Walter de Gruyter GmbH, Berlin/Boston

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