Abstract
Materials with high deep-ultraviolet (DUV; λ<300 nm) transmission are important for many industrial applications. Fluoride single crystals and various glasses, pure SiO2, fluoride, phosphate, multicomponent silicates, and organic materials (PMMA), were investigated. The role of intrinsic absorption (UV edge) due to electron transitions between the main components, and extrinsic absorption due to trace impurities, effect of polyvalent ions, redox behavior, and radiation-induced transmission loss were considered. The optical basicity and optical properties were used to order the materials.
Acknowledgments
The author wishes to thank especially Rotraud Atzrodt for her assistance over a very long time, as well as all her co-workers and students for their support. This work was supported by BMBF grant numbers 03M2713D8, AWO 223895L, DFG EH140, SCHOTT AG, and HERAEUS.
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Artikel in diesem Heft
- Cover and Frontmatter
- Community
- News
- Editorial
- Optical materials
- Topical Issue: Optical Materials Part 1
- Tutorial
- Parametric analysis of thin multifunctional elastomeric optical sheets
- Review Article
- Deep-UV materials
- Research Articles
- Frequency-dependent electro-optics of liquid crystal devices utilizing nematics and weakly conducting polymers
- Design of a 1D phase-mask translational scanner for large-size spatially coherent grating printing
- Single pulse femtosecond laser ablation of silicon – a comparison between experimental and simulated two-dimensional ablation profiles
Artikel in diesem Heft
- Cover and Frontmatter
- Community
- News
- Editorial
- Optical materials
- Topical Issue: Optical Materials Part 1
- Tutorial
- Parametric analysis of thin multifunctional elastomeric optical sheets
- Review Article
- Deep-UV materials
- Research Articles
- Frequency-dependent electro-optics of liquid crystal devices utilizing nematics and weakly conducting polymers
- Design of a 1D phase-mask translational scanner for large-size spatially coherent grating printing
- Single pulse femtosecond laser ablation of silicon – a comparison between experimental and simulated two-dimensional ablation profiles