Zum Hauptinhalt springen
Artikel
Lizenziert
Nicht lizenziert Erfordert eine Authentifizierung

UHV chemical vapour deposition of silicon nanowires

  • EMAIL logo , und
Veröffentlicht/Copyright: 27. Januar 2022
Veröffentlichen auch Sie bei De Gruyter Brill

Abstract

We report on the growth of silicon nanowires by means of chemical vapour deposition in ultrahigh vacuum environment using different catalyst materials. Epitaxial growth via the vapour-liquid-solid growth mechanism of silicon nanowires is achieved with gold as catalyst on a (111)-oriented hydrogen-terminated silicon wafer. The resulting wires are mostly (111) oriented. Additionally, iron and dysprosium have been successfully tested as catalyst material for nanowire growth below the eutectic temperature. The nanowires grown with Fe or Dy exhibit a transition from epitaxial growth to polycrystalline growth with increasing height.


Volker Schmidt MPI of Microstructure Physics Weinberg 2, D-06120 Halle, Germany Tel.: +49 345 5 58 26 72 Fax: +49 345 5 51 12 23

References

[1] R.S. Wagner, W.C. Ellis: Appl. Phys. Lett. 4 (1964) 89.10.1063/1.1753975Suche in Google Scholar

[2] N. Ozaki, Y. Ohno, S. Takeda: Appl. Phys. Lett. 73 (1998) 3700.10.1063/1.122868Suche in Google Scholar

[3] A.M. Morales, C.M. Lieber: Science 279 (1998) 211.10.1126/science.279.5348.211Suche in Google Scholar PubMed

[4] Z.Q. Liu et al.: J. Crystal Growth 224 (2001) 230.10.1016/S0022-0248(01)01022-3Suche in Google Scholar

[5] T.I. Kamins, R.S. Williams, D.P. Basile, T. Hesjedal, J.S. Harris: J. Appl. Phys. 89 (2001) 1008.10.1063/1.1335640Suche in Google Scholar

Received: 2004-11-29
Accepted: 2005-02-14
Published Online: 2022-01-27

© 2005 Carl Hanser Verlag, München

Artikel in diesem Heft

  1. Frontmatter
  2. Editorial
  3. Editorial
  4. Articles Basic
  5. TEM observations on the behavior of facet junctions in interfaces and inclusions
  6. 1-dimensional lanthanide halide crystals encapsulated within single-walled carbon nanotubes – a brief review
  7. UHV chemical vapour deposition of silicon nanowires
  8. StripeTEM as a method of calculating chemical profiles across interfaces between solids or core-shell structures using electron energy-loss spectroscopic profiling
  9. Nanocluster interfaces and epitaxy: Ag on Si surfaces
  10. Imaging grain boundary segregation by electron diffractive imaging
  11. Interfaces in nanosize perovskite titanate ferroelectrics – microstructure and impact on selected properties
  12. Dynamic observation of nanometer-sized island formation on the SrTiO3(001) and (011) surfaces by in situ high-resolution transmission electron microscopy
  13. Modeling of misfit and threading dislocations in epitaxial heterostructures
  14. Grain growth under the influence of mechanical stresses
  15. Articles Applied
  16. Interfaces in nanostructured thin films and their influence on hardness
  17. The temporal evolution of the nanostructures of model Ni–Al–Cr and Ni–Al–Cr–Re superalloys
  18. Effect of TiO2–SiO2 distribution on bimodal microstructure of TiO2-doped α-Al2O3 ceramics
  19. Understanding nanostructured hard coatings – the importance of interfaces and interphases
  20. Analytical TEM study of microstructure – property relations in liquid-phase-sintered SiC with AlN–Y2O3 additives
  21. Evidence of a transient phase during the hydrolysis of calcium-deficient hydroxyapatite
  22. Zirconia/nickel interfaces in micro- and nanocomposites
  23. Notifications/Mitteilungen
  24. Personal/Personelles
  25. News/Aktuelles
  26. Conferences/Konferenzen
Heruntergeladen am 29.4.2026 von https://www.degruyterbrill.com/document/doi/10.3139/ijmr-2005-0077/html?lang=de
Button zum nach oben scrollen