Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures

M. Sabooni; M. Esmaeili; H. Haratizadeh; B. Monemar; P. Paskov; S. Kamiyama; M. Iwaya; H. Amano; I. Akasaki

doi:10.2478/s11772-007-0017-5

Startseite Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures

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Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures

M. Sabooni , M. Esmaeili , H. Haratizadeh , B. Monemar , P. Paskov , S. Kamiyama , M. Iwaya , H. Amano und I. Akasaki

Veröffentlicht/Copyright: 1. September 2007

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Aus der Zeitschrift Opto-Electronics Review Band 15 Heft 3

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Sabooni, M., Esmaeili, M., Haratizadeh, H., Monemar, B., Paskov, P., Kamiyama, S., Iwaya, M., Amano, H. and Akasaki, I.. "Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures" Opto-Electronics Review, vol. 15, no. 3, 2007, pp. 163-167. https://doi.org/10.2478/s11772-007-0017-5

Sabooni, M., Esmaeili, M., Haratizadeh, H., Monemar, B., Paskov, P., Kamiyama, S., Iwaya, M., Amano, H. & Akasaki, I. (2007). Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures. Opto-Electronics Review, 15(3), 163-167. https://doi.org/10.2478/s11772-007-0017-5

Sabooni, M., Esmaeili, M., Haratizadeh, H., Monemar, B., Paskov, P., Kamiyama, S., Iwaya, M., Amano, H. and Akasaki, I. (2007) Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures. Opto-Electronics Review, Vol. 15 (Issue 3), pp. 163-167. https://doi.org/10.2478/s11772-007-0017-5

Sabooni, M., Esmaeili, M., Haratizadeh, H., Monemar, B., Paskov, P., Kamiyama, S., Iwaya, M., Amano, H. and Akasaki, I.. "Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures" Opto-Electronics Review 15, no. 3 (2007): 163-167. https://doi.org/10.2478/s11772-007-0017-5

Sabooni M, Esmaeili M, Haratizadeh H, Monemar B, Paskov P, Kamiyama S, Iwaya M, Amano H, Akasaki I. Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures. Opto-Electronics Review. 2007;15(3): 163-167. https://doi.org/10.2478/s11772-007-0017-5

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Published Online: 2007-9-1

Published in Print: 2007-9-1

Artikel in diesem Heft

A Sagnac-Michelson fibre optic interferometer: Signal processing for disturbance localization
Electromagnetic wave propagation through frequency-dispersive and lossy double-negative slab
Direct measurement of group dispersion of optical components using white-light spectral interferometry
Analysis of noise properties of an optocoupler device
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Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures
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https://doi.org/10.2478/s11772-007-0017-5

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photoluminescence; time-resolved photoluminescence; quantum well; exciton localization; GaN/AlGaN

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Artikel in diesem Heft

A Sagnac-Michelson fibre optic interferometer: Signal processing for disturbance localization
Electromagnetic wave propagation through frequency-dispersive and lossy double-negative slab
Direct measurement of group dispersion of optical components using white-light spectral interferometry
Analysis of noise properties of an optocoupler device
Electrooptical behaviour and control of a suspended particle device
Large-dimensional light-emitting elements with printed electroluminophore
Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures
Sensor properties of planar waveguide structures with grating couplers