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The crystal structure and electron density of tetraphenyl-silicon, (C6H5)4Si

Published/Copyright: August 25, 2010

Abstract

The crystal structure and electron density of tetraphenyl-silicon, (C6H5)4Si, (a0 = 11.450(2), c0 = 7.063(1) Å, P[unk]21c, Z = 2) has been studied by single crystal X-ray diffraction. Data were collected up to 2θmax = 70° (smax = 0.81 Å−1). The final agreement factors of the all-data refinement were Roverall = 0.027 and Rw = 0.033 (omitting unobserved intensities). The electron redistribution due to chemical bonding was studied by calculating (X – XHO) difference density maps with the atomic parameters from a semi-high-order (HO) refinement with reflections of s > 0.48 Å−1. The deformation density distribution associated with the Si – C bond compares qualitatively well with the Si – O bonds found in forsterite, Mg2SiO4, and quartz, SiO2.

Published Online: 2010-8-25
Published in Print: 1983-1-1

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