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The platinum-rich scandium silicide Sc2Pt9Si3

  • Daniel Voßwinkel and Rainer Pöttgen EMAIL logo
Published/Copyright: July 21, 2017
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Abstract

Single crystals of Sc2Pt9Si3 have been obtained from an arc-melted and inductively annealed sample of the starting composition Sc:4Pt:2Si. The Sc2Pt9Si3 structure (Tb2Pt9Ge3 type, space group C2/c) was refined from single crystal X-ray diffractometer data: a=1303.4(1), b=749.9(1), c=973.5(1), β=116.44(1)°, wR2=0.0731, 1643 F2 values and 67 variables. The structure contains three basic coordination polyhedra Sc@Pt11, Si1@Pt8 and Si2@Pt8 which show a simple condensation pattern avoiding direct Sc–Si and Si–Si bonding.

1 Introduction

Of the many rare earth-based intermetallic compounds those with scandium often show anomalies in their crystal chemical behavior. This is a consequence of the small size of the scandium atoms which are distinctly smaller than the lutetium ones [1]. That is why isotypic series of rare earth intermetallics often end with the lutetium member. In some cases the scandium compounds show small structural distortions (superstructure formation) to reach a crystal structure similar to the respective lutetium compound. Overviews on the crystal chemical behavior of scandium intermetallics have been published [2], [3], [4].

45Sc solid state NMR spectroscopy is a complementary tool for structure determination [5], [6], [7], [8], [9], especially where X-ray diffraction attains its limits. Particularly in the case of superstructure formation, multiple scandium sites can be resolved in 45Sc solid state NMR spectra. Striking examples are the stannide ScAgSn [10] and the complex carbides Sc3TC4 (T=Co, Ni, Ru, Rh, Os, Ir) [11] where two respectively three crystallographically independent scandium sites could be resolved.

Since Sc3+ is diamagnetic, most ternary scandium intermetallics simply show Pauli paramagnetism of the conduction electrons. Some of these compounds exhibit transitions to a superconducting state at very low temperature. Detailed studies have been performed, e.g., ScRu4B4 (TC=6.28–7.70 K) [12], [13], Sc2Fe3Si5 (TC=4.25–4.52 K) [14], [15], Sc5Co4Si10 (TC=4.9 K), Sc5Rh4Si10 (TC=8.5 K), Sc5Ir4Si10 (TC=8.4 K) [16], or ScIrP (TC=3.4 K) [17], [18].

Detailed phase analytical work on ternary scandium intermetallic compounds is scarce. For several phase diagrams just the equiatomic phases have been reported so far, e.g., ScPdSi in the Sc-Pd-Si system [4], [19], [20]. In contrast, a series of silicides is known for the corresponding system Sc-Pt-Si, i.e., ScPtSi [19], ScPt2Si [21], Sc4Pt7Si2 [22], Sc5Pt9Si7 [21], Sc3PtSi3 [23] and Sc2Pt3Si2 [24].

In a recent study on rhodium- and iridium-rich silicides we obtained ScRh4Si2 and ScIr4Si2 [25], crystallizing with the orthorhombic YRh4Ge2 type structure. When searching for an isotypic platinum compound we obtained the new platinum-rich silicide Sc2Pt9Si3, the seventh silicide in this ternary system. The crystal chemical details of Sc2Pt9Si3 are reported herein.

2 Experimental

2.1 Synthesis

Sc2Pt9Si3 single crystals were obtained from a sample with the initial composition 1Sc:4Pt:2Si using scandium chips (smart elements), platinum sheets (Agosi) and silicon pieces (smart elements) as starting materials. All elements had stated, metal-based purities better than 99.9%. About 500 mg of the sample were prepared via arc-melting [26] of the elements under an argon atmosphere of ca. 700 mbar. The argon was purified over titanium sponge (870 K), silica gel, and molecular sieves. Subsequently the arc-melted sample was sealed in an evacuated silica ampoule which was then placed in the water-cooled sample chamber of an induction furnace (TIG 2.5/300, Hüttinger Elektronik) [27]. Best conditions for crystal growth for a high melting point silicide is an annealing procedure slightly below the melting point. Therefore, the sample was annealed at the temperature at which the first hints for softening were observed. The power output of the generator was then reduced by approx. 10% and the button was annealed at that power output for 6 h. The annealed button showed no reaction with the silica tube and is stable in air over weeks.

2.2 X-ray diffraction

The polycrystalline sample was first studied through its Guinier powder pattern: Enraf-Nonius camera, type FR 552, imaging plate technique (Fuji Film, BAS-1800), CuKα1 radiation and α-quartz (Sigma-Aldrich, a=491.30 and c=540.46 pm) as an internal reference. The experimental pattern was compared to a calculated one [28] using the atomic positions from the single crystal investigation (vide infra). Sc2Pt9Si3 was the minor product besides another unknown platinum-rich ternary silicide with an approximate composition Sc:Pt:Si=15:60:25 (determined via EDX). The sample did not contain any of the other platinum-rich silicides ScPt2Si [21], Sc4Pt7Si2 [22], Sc5Pt9Si7 [21] or Sc2Pt3Si2 [24]. Due to a significant overlap of the reflections we could not reliably refine the lattice parameters from the powder data.

Irregularly-shaped, conchoidally fractured single crystals of Sc2Pt9Si3 were selected from the crushed sample and fixed to thin quartz fibres using bees wax. The crystals were investigated by Laue photographs (Buerger camera, white molybdenum radiation, image plate technique, Fujifilm, BAS-1800) in order to check their quality. Intensity data of a suitable crystal was collected at ambient temperature by use of a Stoe StadiVari diffractometer equipped with a Mo micro focus source and a Pilatus detection system. Due to a Gaussian-shaped profile of the X-ray source scaling was applied along with the numerical absorption corrections. All relevant crystallographic details of the data collection and evaluation are listed in Table 1.

Table 1:

Crystal data and structure refinement for Sc2Pt9Si3, space group C2/c, Z=4.

Empirical formulaSc2Pt9Si3
Formula weight, g mol−11929.9
Unit cell dimension, pm, deg (single crystal data)a=1303.4(1)

b=749.9(1)

c=973.5(1)
β=116.44(1)
Cell volume, nm3V=0.8519
Calculated density, g cm−315.05
Crystal size, μm310×40×40
Transm. ratio (min/max)0.041/0.214
Absorption coefficient, mm−1149.0
Detector distance, mm40
Exposure time, s40
Integr. Param. A/B/EMS6.5/−5.5/0.015
F(000), e3144
θ-range, deg3–34
Range in hkl±20, ±11, ±15
Total no. of reflections11485
Independent reflections/Rint1643/0.0501
Reflections with I>2 σ(I)/Rσ1357/0.0176
Data/parameters1643/67
Goodness-of-fit on F22.00
R1/wR2 for I>2 σ(I)0.0334/0.0719
R1/wR2 for all data0.0425/0.0731
Extinction coefficient327(12)
Largest diff. peak/hole, e Å−34.75/−6.25

2.3 Structure refinement

The Sc2Pt9Si3 data set showed a monoclinic C-centered lattice and the systematic extinctions were compatible with space groups Cc and C2/c of which the centrosymmetric group was found to be correct. The starting atomic parameters were deduced with the Superflip routine [29] (charge-flip algorithm (CFA) [30]) and the structure was refined with anisotropic displacement parameters for all atoms using the Jana2006 package [31] (full-matrix least-squares on Fo2). Refinement of the occupancy parameters indicated no deviation from the ideal composition. Inspection of the Pearson data base [32] for the code mS56 and Wyckoff sequence f6ec revealed isotypism with Tb2Pt9Ge3 [33]. The setting of the terbium compound was then used for the last refinement cycles. The final difference Fourier syntheses revealed no significant residual peaks. The refined atomic positions, displacement parameters, and interatomic distances are given in Tables 2 and 3.

Table 2:

Atomic coordinates, anisotropic and equivalent isotropic displacement parameters (pm2) for Sc2Pt9Si3.

AtomWyckoff sitexyzU11U22U33U12U13U23Ueq
Sc8f0.1683(2)0.4145(4)0.2514(3)131(10)151(10)94(9)6(7)42(8)5(8)128(7)
Pt18f0.11451(4)0.08997(7)0.07383(6)167(2)142(2)157(2)20(2)93(2)27(2)148(2)
Pt28f0.22708(4)0.08638(7)0.42276(5)89(2)113(2)103(2)1(1)28(1)−5(1)107(1)
Pt38f0.38886(4)0.30424(7)0.25496(5)109(2)113(2)103(2)17(1)40(1)4(2)111(1)
Pt48f0.44103(4)0.07773(7)0.07493(5)94(2)115(2)98(2)−7(1)37(1)−11(1)104(1)
Pt54e00.1408(1)1/489(3)138(3)110(3)034(2)0116(2)
Si18f0.0886(3)0.2682(5)0.4976(4)122(14)132(16)110(13)−23(11)50(11)−2(1)122(11)
Si24c1/41/40110(20)140(20)105(19)−7(16)18(15)−33(18)129(15)
  1. Ueq is defined as one third of the trace of the orthogonalized Uij tensor.

Table 3:

Interatomic distances (pm) for Sc2Pt9Si3 (standard deviations in parentheses).

Sc1:1Pt2284.1(3)Pt3:1Si1235.7(4)
1Pt4284.5(3)1Si2236.7(1)
1Pt2287.8(3)1Pt4269.7(1)
1Pt1288.5(3)1Pt2272.5(1)
1Pt1289.0(2)1Pt1272.7(1)
1Pt2290.8(3)1Pt4273.5(1)
1Pt4292.1(3)1Pt5292.1(1)
1Pt4294.8(2)1Pt3294.1(1)
1Pt3297.7(3)1Sc1297.7(3)
1Pt5299.9(3)1Sc1301.0(3)
1Pt3301.0(3)Pt4:1Si1240.7(4)
Pt1:1Si2249.1(1)1Si2260.4(1)
1Pt3272.7(1)1Si1262.5(5)
1Pt5275.6(1)1Pt3269.7(1)
1Si1276.4(4)1Pt3273.5(1)
1Si1276.7(4)1Pt2279.4(1)
1Pt4281.0(1)1Pt4280.1(1)
1Pt2282.6(1)1Pt1281.0(1)
1Sc1288.5(3)1Sc1284.5(3)
1Sc1289.0(2)1Sc1292.1(3)
Pt2:1Si1243.0(4)1Sc1294.8(2)
1Si2261.1(1)Pt5:2Si1236.1(4)
1Si1261.1(4)2Pt2270.6(1)
1Pt5270.6(1)2Pt1275.6(1)
1Pt3272.5(1)2Pt3292.1(1)
1Pt4279.4(1)2Sc1299.9(3)
1Pt2280.0(1)Si1:1Pt3235.7(4)
1Pt1282.6(1)1Pt5236.1(4)
1Sc1284.1(3)1Pt4240.7(4)
1Sc1287.8(3)1Pt2243.0(4)
1Sc1290.8(3)1Pt2261.1(4)
1Pt4262.5(5)
1Pt1276.4(4)
1Pt1276.7(4)
Si2:2Pt3236.7(1)
2Pt1249.1(1)
2Pt4260.4(1)
2Pt2261.1(1)
  1. All distances of the first coordination spheres are listed.

Further details of the crystal structure investigation may be obtained from FIZ Karlsruhe, 76344 Eggenstein-Leopoldshafen, Germany (fax: +49-7247-808-666; e-mail: crysdata@fiz-karlsruhe.de) on quoting the deposition number CSD-433137.

2.4 EDX data

Semiquantitative EDX analyses of the single crystal studied on the diffractometer were carried out in variable pressure mode with a Zeiss EVO® MA10 scanning electron microscope with Sc, Pt, and SiO2 as standards. The measurement confirmed the ideal composition within an error limit of ±4 at.% (accounting for the irregular crystal surface). No impurity elements heavier than boron were observed.

3 Crystal chemistry

Sc2Pt9Si3 crystallizes with the monoclinic Tb2Pt9Ge3 type structure [33], space group C2/c. The series of germanides has been reported for the rare earth elements Y and Gd–Lu. The aluminum-rich phase Eu2Pd3Al9 [34] is also isotypic with Tb2Pt9Ge3, however, with site inversions Pt↔Al and Ge↔Pd (anti-type formation).

A projection of the Sc2Pt9Si3 structure along the monoclinic axis is presented in Fig. 1. At first sight the structure seems rather complex, but it can geometrically be explained by a stacking of two different layers A and B approximately along the c axis. The stacking sequence of these layers is ABA′B′, where the layers A′ and B′ are inverted with respect to A and B. Separate drawings for the layers A and B are shown in Fig. 2. Layer A consists of slightly distorted scandium hexagons which are centered by Pt3 triangles. The brighter shading in Fig. 2 (left) indicates the inverted layer. Layer B is built up exclusively from platinum and silicon atoms and can be considered as a condensed double layer of puckered hexagons Pt3Si3. Therefore, it is thicker than layer A.

Fig. 1: Projection of the Sc2Pt9Si3 structure onto the ac plane. Scandium, platinum and silicon atoms are shown as light gray, blue and red circles, respectively. The monoclinic unit cell is indicated by a dashed green line. The crystallographically independent platinum and silicon sites are emphasized and the stacking sequence of layers A, B, A′ and B′ is given at the right-hand part.
Fig. 1:

Projection of the Sc2Pt9Si3 structure onto the ac plane. Scandium, platinum and silicon atoms are shown as light gray, blue and red circles, respectively. The monoclinic unit cell is indicated by a dashed green line. The crystallographically independent platinum and silicon sites are emphasized and the stacking sequence of layers A, B, A′ and B′ is given at the right-hand part.

Fig. 2: Slabs A and B of Sc2Pt9Si3. Left: Projection of two layers A′ and A onto the ab plane with the viewing direction along the c axis. The A slab at about z=1/4 is shown in brighter shading and with dashed lines. Right: The B slab at z≈1/2. Platinum and silicon atoms are shown in blue and red color, respectively. The Pt atoms and bonds located below the paper plane are shown in brighter shading or as dashed lines, respectively. Parts of the monoclinic unit cell are indicated by a dashed green line as a guide to the eye.
Fig. 2:

Slabs A and B of Sc2Pt9Si3. Left: Projection of two layers A′ and A onto the ab plane with the viewing direction along the c axis. The A slab at about z=1/4 is shown in brighter shading and with dashed lines. Right: The B slab at z≈1/2. Platinum and silicon atoms are shown in blue and red color, respectively. The Pt atoms and bonds located below the paper plane are shown in brighter shading or as dashed lines, respectively. Parts of the monoclinic unit cell are indicated by a dashed green line as a guide to the eye.

The monoclinic Sc2Pt9Si3 structure is closely related to the family of the orthorhombic Y2Co3Ga9 type [35], space group Cmcm. This structure type is adopted by more than 90 aluminides and gallides RE2T3Al(Ga)9 with T=Co, Ru, Rh, Ir [32], [35], [36], [37], [38], [39], [40], [41], [42]. The only inverted example is the palladium-rich antimonide Ce2Pd9Sb3 [43]. The orthorhombic compounds contain similar layers A and B and can be considered as another stacking variant. The crystal chemical details are discussed in [33], [40], [41], [42]. Also, the complex structure of Yb2Pd3Ga9 [44], [45] with space group symmetry P6122 belongs to this family of stacking variants.

The shortest interatomic distances in the Sc2Pt9Si3 structure occur for Pt–Si, covering the broad range from 236 to 277 pm. In particular, the shorter ones agree well with the sum of the covalent radii [1] of 246 pm for Pt+Si and thus one can certainly assume substantial covalent Pt–Si bonding, similar to the other scandium platinum silicides. The platinum atoms as the majority component in Sc2Pt9Si3 show a pronounced platinum substructure. Each platinum atom has between four and six platinum neighbors at Pt–Pt distances ranging from 270 to 294 pm. These Pt–Pt distances compare well with the Pt–Pt distance of 277 pm in fcc platinum [46]. The platinum-rich silicide Sc4Pt7Si2 shows slightly longer Pt–Pt distances of 282–303 pm [22].

Since scandium and silicon are clearly the minority components in Sc2Pt9Si3, one consequently observes no Sc–Si and Si–Si bonding. Thus, we can construct the Sc2Pt9Si3 structure by three basic coordination polyhedra: Sc@Pt11, Si1@Pt8 and Si2@Pt8 (Fig. 3). The layers of condensed Sc@Pt11 polyhedra (Sc–Pt distances ranging from 284 to 301 pm) are at z≈1/4 and z≈3/4, whereby they are inverted with respect to each other. The Sc@Pt11 polyhedra can be considered as trigonal prisms with five additional platinum atoms capping the rectangular faces. Both crystallographically independent silicon atoms have slightly distorted cubic platinum coordination. The Si1@Pt8 (light gray) and Si2@Pt8 (green) cubes are condensed via common edges. Again we observe two layers around z≈0 and z≈1/2 that are inverted. The kind of stacking sequence adopted by the 2-9-3 and 2-3-9 compounds might depend on radii criteria.

Fig. 3: The basic layers of the Sc2Pt9Si3 structure built up from Sc@Pt11 (magenta), Si1@Pt8 (light gray) and Si2@Pt8 (green) polyhedra. The viewing direction for the distorted Si1@Pt8 and Si2@Pt8 cubes is approximately the space diagonal of the cubes.
Fig. 3:

The basic layers of the Sc2Pt9Si3 structure built up from Sc@Pt11 (magenta), Si1@Pt8 (light gray) and Si2@Pt8 (green) polyhedra. The viewing direction for the distorted Si1@Pt8 and Si2@Pt8 cubes is approximately the space diagonal of the cubes.

Acknowledgements

We thank Dipl.-Ing. U. Ch. Rodewald for the collection of the single crystal diffractometer data.

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Received: 2017-5-29
Accepted: 2017-6-13
Published Online: 2017-7-21
Published in Print: 2017-8-28

©2017 Walter de Gruyter GmbH, Berlin/Boston

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