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Effect of carrier (hole) temperature on performance of optical amplifiers quantum dot structure

  • Alaa Jabbar Ghazai EMAIL logo , Ahmed H. Flayyih , Rasool R. Attab and Amin H. Al-Khursan ORCID logo
Published/Copyright: November 28, 2022
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Journal of Optical Communications
From the journal Journal of Optical Communications Volume 44 Issue 4

Abstract

Carriers temperature in quantum dot (QD) optical amplifiers has been modelled theoretically taken into account hole contribution, which is not considered early. The contributions of wetting layer (WL), first excited state (ES1), and second excited state (ES2) have also been considered. Effect of WL−ES2 recombination time of both electrons and holes, carrier heating (CH) time of electrons and holes, in addition to electron hole recombination time are examined. The results show that there is a gap between electron and hole heating temperature due to the difference between there recovery times. It is found that fast hole (long electron) recombination time yield a high carrier temperature.

Keywords: carrier heating; carriers temperature; electron-hole interaction; QD SOAs
Corresponding author: Alaa Jabbar Ghazai, Physics Department, Science College, Al-Nahrain University, Baghdad, Iraq, Email:

  1. Author contributions: All the authors have accepted responsibility for the entire content of this submitted manuscript and approved submission.

  2. Research funding: None declared.

  3. Conflict of interest statement: The authors declare no conflicts of interest regarding this article.

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Received: 2021-10-22
Accepted: 2022-11-07
Published Online: 2022-11-28
Published in Print: 2023-10-26

© 2022 Walter de Gruyter GmbH, Berlin/Boston

Articles in the same Issue

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  18. Impact of Rayleigh-Distributed PAPR on the Performance of a Pre-Clipped DCO-OFDM System
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https://doi.org/10.1515/joc-2021-0252
Keywords for this article
carrier heating; carriers temperature; electron-hole interaction; QD SOAs

Articles in the same Issue

  1. Frontmatter
  2. Amplifiers
  3. Effect of carrier (hole) temperature on performance of optical amplifiers quantum dot structure
  4. Devices
  5. 1 × 2 power splitter based on photonics crystals fibers
  6. Evolution of Adder and Subtractor Circuit Using Si3N4 Microring Resonator
  7. Fibers
  8. Different Photonic Crystal Fibers Configurations with the Key Solutions for the Optimization of Data Rates Transmission
  9. Networks
  10. Design and implementation of OLT switching function in 40/10G TDM-PON experimental system
  11. A parallel cross-connection recovery scheme for dual link failure in elastic optical networks
  12. A Brief Review on the Methods that Improve Optical Burst Switching Network Performance
  13. MBO-Based Bandwidth Allocation and Traffic Coloring Optimization in PON
  14. HMM-Based Secure Framework for Optical Fog Devices in the Optical Fog/Cloud Network
  15. Attack-Aware Dynamic Upstream Bandwidth Assignment Scheme for Passive Optical Network
  16. Systems
  17. 2 × 10 Gbit/s–10 GHz Radio over Free Space Optics Transmission System Incorporating Mode Division Multiplexing of Hermite Gaussian Modes
  18. Impact of Rayleigh-Distributed PAPR on the Performance of a Pre-Clipped DCO-OFDM System
  19. Suitability of FBG for Gain Flatness of 64 × 10 Gbps DWDM System Using Hybrid (EDFA+YDFA) Optical Amplifier in C + L Band up to 50 GHz (0.4 nm) Channel Spacing
  20. BER Performance Analysis of an Orthogonal FDM Free Space Optical Communication System with Homodyne Optical Receiver over Turbulent Atmospheric Channel
  21. Theory
  22. Numerical Analysis of Soliton Propagation in a Tapered Waveguide
  23. New Optical Codes Based on Construction of Parity Check Matrix of LDPC Codes
  24. Performance Analysis of 20 Gbit/s–40 GHz MDM-Ro-FSO Link Incorporating DPSK Modulation Scheme
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